1N4245 thru 1N4249 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “standard recovery” rectifier diode series is military qualified to MIL-PRF19500/286 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are similar in ratings to the 1N5614 thru 1N5622 series where surface mount MELF package configurations are available by adding a “US” suffix (see separate data sheet for 1N5614US thru 1N5622US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPEARANCE
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FEATURES
• Popular JEDEC registered 1N4245 to 1N4249 series • Voidless hermetically sealed glass package • Triple-Layer Passivation • Internal “Category I” Metallurgical bonds • Working Peak Reverse Voltage 200 to 1000 Volts. • JAN, JANTX, and JANTXV available per MIL-PRF19500/286 (for JANS, see 1N5614-5622 series) • Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N5614US thru 1N5622US) • • • • • • • •
APPLICATIONS / BENEFITS
Standard recovery 1 Amp rectifiers 200 to 1000 V Military and other high-reliability applications General rectifier applications including bridges, half-bridges, catch diodes, etc. High forward surge current capability Extremely robust construction Low thermal resistance Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
• Junction & Storage Temperature: -65 C to +175 C • Thermal Resistance: 42oC/W junction to lead at 3/8 inch (10 mm) lead length from body • Thermal Impedance: 4.5oC/W @ 10 ms • Average Rectified Forward Current (IO): 1.0 Amps @ TA = 55ºC • Forward Surge Current: 25 Amps @ 8.3 ms halfsine • Solder Temperatures: 260ºC for 10 s (maximum)
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MECHANICAL AND PACKAGING
• • • • • • • CASE: Hermetically sealed voidless hard glass with Tungsten slugs TERMINATIONS: Axial leads are copper with Tin/Lead (Sn/Pb) finish MARKING: Body paint and part number, etc. POLARITY: Cathode band TAPE & REEL option: Standard per EIA-296 WEIGHT: 340 mg See package dimensions on last page
ELECTRICAL CHARACTERISTICS
TYPE WORKING MINIMUM PEAK BREAKDOWN REVERSE VOLTAGE VOLTAGE VRWM VBR @ 100µA VOLTS VOLTS 200 400 600 800 1000 240 480 720 960 1150 AVERAGE RECTIFIED CURRENT o IO @ T A = 5 5 C AMPS o 55 C 1.00 1.00 1.00 1.00 1.00 MAXIMUM FORWARD VOLTAGE VF @ 3 A VOLTS 1.3 1.3 1.3 1.3 1.3 MAXIMUM REVERSE CURRENT IR @ VRWM 25 C 1.0 1.0 1.0 1.0 1.0
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1N4245 thru 1N4249
µA
1N4245 1N4246 1N4247 1N4248 1N4249
150 C 150 150 150 150 150
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MAXIMUM SURGE CURRENT (NOTE 1) IFSM AMPS 25 25 25 25 25
MAXIMUM REVERSE RECOVERY (NOTE 2) trr µSec. 5.0 5.0 5.0 5.0 5.0
NOTE 1: IO = 1A, 8 ms surge
Copyright 2004 12-07-2004 REV A
NOTE 2: IF = 0.5A, IRM = 1A, IR(REC) = .250A
Microsemi
Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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1N4245 thru 1N4249 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
Symbol
VBR VRWM VF IR trr
SYMBOLS & DEFINITIONS Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.
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Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is reached.
GRAPHS
FIGURE 1 TYPICAL FORWARD CONDUCTANCE CURVE PACKAGE DIMENSIONS
1N4245 thru 1N4249
Copyright 2004 12-07-2004 REV A
Microsemi
Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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