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1N5196UR_08

1N5196UR_08

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    1N5196UR_08 - SWITCHING DIODE - Microsemi Corporation

  • 数据手册
  • 价格&库存
1N5196UR_08 数据手册
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com SWITCHING DIODE – METALLURGICALLY BONDED – HERMETICALLY SEALED – DOUBLE PLUG CONSTRUCTION Qualified per MIL-PRF-19500/118 DEVICES QUALIFIED LEVELS 1N5196UR JAN JANTX JANTXV MAXIMUM RATING AT 25°C Operating Temperature: Storage Temperature: Surge Current, sine, 8.3mS: Total Power Dissipation, 25°C: Max. Operating Current, 25°C: D.C. Reverse Voltage (VRWM): -65°C to +175°C -65°C to +175°C 2A 500mW 200mA 225V .016" - .022" .41mm - .55mm .063" - .067" 1.60mm - 1.70mm DC ELECTRICAL CHARACTERISTICS VF Ambient (°C) 25 -55 IF mA 100 100 Min V 0.8 Max V 1.0 1.2 Ambient (°C) 25 25 150 IR V (dc) 225 250 225 Min µA Max µA 0.025 1.0 5.0 MIN .001" .03mm .130" - .146" 3.30mm - 3.70mm DESIGN DATA Case: Hermetically sealed glass package per MIL-PRF-19500/118 DO-213AA outline Lead Material: Copper clad steel Lead Finish: Tin / Lead Thermal Impedance (ZθJX): 70°C/W maximum Polarity: Cathode end is banded LDS-0036 Rev. 1 (072072) Page 1 of 1
1N5196UR_08 价格&库存

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