1N5521

1N5521

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    1N5521 - Low Voltage Avalanche 500 mW Zener Diodes DO-35 - Microsemi Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5521 数据手册
1N5518B thru 1N5546B-1 DO-35 Low Voltage Avalanche 500 mW Zener Diodes DO-35 SCOTTSDALE DIVISION DESCRIPTION The 1N5518 thru 1N5546 series of 0.5 watt Zener Voltage Regulators provides a selection from 3.3 to 33 volts in standard 5% tolerances as well as tighter tolerances identified by different suffix letters on the part number. These glass axial-leaded DO-35 Zeners are also available with an internalmetallurgical-bond option by adding a “-1” suffix. This type of bonded Zener package construction is available in JAN, JANTX, and JANTXV military qualifications to MIL-PRF-19500/437. Microsemi also offers numerous other Zener products to meet higher and lower power applications. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPEARANCE W W W . Microsemi . C O M DO-35 (DO-204AH) FEATURES • JEDEC registered 1N5518 thru 1N5546 • Internal metallurgical bond option available by adding a “-1” suffix • Also available in JAN, JANTX, and JANTXV qualifications per MIL-PRF-19500/437 by adding the JAN, JANTX, or JANTXV prefixes to part numbers for desired level of screening as well as –1” suffix; (e.g. JANTX1N5518B-1, JANTXV1N5546D-1, etc.) • Military Surface Mount available in DO-213AA package outline by adding a UR-1 suffix in addition to the JAN, JANTX, and JANTXV prefix; e.g. JANTX1N5518BUR-1 (see separate data sheet) • Commercial Surface Mount also available in separate data sheet as 1N5518UR to 1N5546BUR in DO-213AA package (consult factory for others) • DO-7 glass body axial-leaded Zener equivalents are also available • • • • • • • • • APPLICATIONS / BENEFITS Regulates voltage over a broad operating current and temperature range Guaranteed voltage regulation (∆VZ) from IZL to IZT Voltage selection from 3.3 to 33 V Standard voltage tolerances are plus/minus 5% with a “B” suffix Tight tolerances available in plus or minus 2% or 1% with C or D suffix respectively Flexible axial-lead mounting terminals Nonsensitive to ESD per MIL-STD-750 Method 1020 Minimal capacitance (see Figure 3) Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS • Operating and Storage temperature: -65 C to +175ºC • Thermal Resistance: 250 ºC/W junction to lead at 3/8 (10 mm) lead length from body, or 310ºC/W junction to ambient when mounted on FR4 PC board (1 oz Cu) with 4 mm2 copper pads and track width 1 mm, length 25 mm • Steady-State Power: 0.5 watts at TL < 50oC 3/8 inch (10 mm) from body or 0.48 W at TA < 25ºC when mounted on FR4 PC board as described for thermal resistance above (see Figure 2 for derating) • Forward voltage @200 mA: 1.1 volts • Solder Temperatures: 260 ºC for 10 s (max) º MECHANICAL AND PACKAGING • • • CASE: Hermetically sealed axial-lead glass DO-35 (DO-204AH) package TERMINALS: Leads, tin-lead plated solderable per MIL-STD-750, method 2026 POLARITY: Cathode indicated by band where diode is to be operated with the banded end positive with respect to the opposite end for Zener regulation MARKING: Part number TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number) WEIGHT: 0.2 grams See package dimensions on last page 1N5518B - 1N5546B-1, DO-35 • • • • Copyright  2003 11-12-2003 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N5518B thru 1N5546B-1 DO-35 Low Voltage Avalanche 500 mW Zener Diodes DO-35 SCOTTSDALE DIVISION W W W . Microsemi . C O M ELECTRICAL CHARACTERISTICS JEDEC TYPE NUMBER (Note 1) NOMINAL ZENER VOLTAGE TEST CURRENT MAX. ZENER IMPEDANCE B-C-D SUFFIX (TA = 25oC unless otherwise noted. Based on DC measurements at thermal equilibrium; VF = 1.1 Max @ IF = 200 mA for all types.) MAX. REVERSE LEAKAGE CURRENT (Note 4) VZ @ IZT (Note 2) VOLTS IZT mAdc 20 20 20 20 10 5.0 3.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 ZZT @ IZT (Note 3) OHMS 26 24 22 18 22 26 30 30 30 35 40 45 60 80 90 90 100 100 100 100 100 100 100 100 100 100 100 100 100 IR µAdc 5.0 3.0 1.0 3.0 2.0 2.0 2.0 1.0 1.0 0.5 0.5 0.1 0.05 0.05 0.05 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 VR – VOLTS NON & ASUFFIX 0.90 0.90 0.90 1.0 1.5 2.0 3.0 4.5 5.5 6.0 6.5 7.0 8.0 9.0 9.5 10.5 11.5 12.5 13.0 14.0 15.0 16.0 17.0 18.0 20.0 21.0 23.0 24.0 28.0 B-C-D SUFFIX 1.0 1.0 1.0 1.5 2.0 2.5 3.5 5.0 6.2 6.8 7.5 8.2 9.1 9.9 10.8 11.7 12.6 13.5 14.4 15.3 16.2 17.1 18.0 19.8 21.6 22.4 25.2 27.0 29.7 B-C-D SUFFIX MAXIMUM DC ZENER CURRENT (Note 5) mAdc 115 105 98 88 81 75 68 61 56 51 46 42 38 35 32 29 27 25 24 22 21 20 19 17 16 15 14 13 12 B-C-D SUFFIX MAX. NOISE DENSITY AT IZ = 250µA REGULATION FACTOR (Note 6) ∆VZ LOW VZ CURRENT (Note 6) IZL IZM ND µV/ √Hz 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 2.0 4.0 4.0 4.0 5.0 10 15 20 20 20 20 20 20 20 20 20 20 20 20 20 VOLTS 0.90 0.90 0.85 0.75 0.60 0.65 0.30 0.20 0.10 0.05 0.05 0.05 0.10 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.25 0.30 0.35 0.40 0.45 0.50 mAdc 2.0 2.0 2.0 2.0 1.0 0.25 0.25 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524 1N5525 1N5526 1N5527 1N5528 1N5529 1N5530 1N5531 1N5532 1N5533 1N5534 1N5535 1N5536 1N5537 1N5538 1N5539 1N5540 1N5541 1N5542 1N5543 1N5544 1N5545 1N5546 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 25.0 28.0 30.0 33.0 NOTES: 1. TOLERANCE AND VOLTAGE DESIGNATION – The JEDEC type numbers shown are +/-20% with guaranteed limits for only VZ, IR, and VF. Units with A suffix are +/-10% with guaranteed limits for VZ, IR, and VF. Units with guaranteed limits for all six parameters are indicated by a B suffix for +/-5.0% units, C suffix for +/-2.0% and D suffix for +/-1.0%. 2. ZENER VOLTAGE (VZ) MEASUREMENT – o Nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature of 25 C. 3. ZENER IMPEDANCE (ZZ) MEASUREMENT – The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (IZT) is superimposed on IZT. 4. REVERSE LEAKAGE CURRENT (IR) – Reverse leakage currents are guaranteed and are measured at VR as shown on the table. 5. MAXIMUM REGULATOR CURRENT (IZM) – The maximum current shown is as shown in MIL-PRF-19500/437. 6. MAXIMUM REGULATION FACTOR (∆VZ) – ∆VZ is the maximum difference between VZ at IZT and VZ at IZL measured with the device junction in thermal equilibrium. 1N5518B - 1N5546B-1, DO-35 Copyright  2003 11-12-2003 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 1N5518B thru 1N5546B-1 DO-35 Low Voltage Avalanche 500 mW Zener Diodes DO-35 SCOTTSDALE DIVISION CIRCUIT AND GRAPHS Noise density, (ND) is specified in microvolts rms per square-root-hertz (µV/ √Hz). Actual measurement is performed using a 1 kHz to 3 kHz frequency bandpass o filter with a constant Zener test current (IZT) at 25 C ambient temperature. TYPICAL CAPACITANCE IN PICOFARADS W W W . Microsemi . C O M At zero volts Rated Power Dissipation (mW) At –2 volts (VR) FIGURE 1 Noise Density Measurement Circuit TL – Lead Temperature ( C) 3/8” from body or TA on FR4 PC Board o ZENER VOLTAGE VZ FIGURE 2 – Power Derating Curve FIGURE 3 Capacitance vs. Zener Voltage (TYPICAL) PACKAGE DIMENSIONS 1N5518B - 1N5546B-1, DO-35 FIGURE 4 Zener Diode Characteristics and Symbol Identification Copyright  2003 11-12-2003 REV B All dimensions in: INCH mm Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3
1N5521
1. 物料型号: - 型号:1N5518B至1N5546B-1 - 封装:DO-35

2. 器件简介: - 1N5518至1N5546系列0.5瓦特Zener压敏电阻提供从3.3到33伏的标准5%公差选择,同时也提供更紧密的公差选项,这些通过不同的后缀字母在零件编号上标识。这些玻璃轴向引线DO-35 Zener也提供内部冶金键合选项,通过添加“-1”后缀获得。这种键合Zener封装结构在JAN、JANTX和JANTXV军用资质中可用,符合MIL-PRF-19500/437标准。

3. 引脚分配: - 极性:阴极通过带状标记指示,对于Zener调节,带状端为正,相对于另一端。

4. 参数特性: - 工作和存储温度:-65ºC至+175ºC - 热阻:250 ºC/W(从结到引线在3/8(10 mm)引线长度处)或310ºC/W(从结到环境,当安装在FR4 PCB板上,1盎司铜,4 mm²铜垫和1 mm宽、25 mm长的轨道时) - 稳态功率:0.5瓦特在TL < 50oC 3/8英寸(10 mm)从本体处,或0.48 W在TA ≤25ºC时,当安装在上述热阻描述的FR4 PCB板上(查看图表2以获取降额曲线)

5. 功能详解: - JEDEC注册的1N5518至1N5546系列,通过添加“-1”后缀提供内部冶金键合选项。 - 调节电压在广泛的工作电流和温度范围内。 - 保证电压调节(从IzL到IZT的ΔVz)。 - 也提供JAN、JANTX和JANTXV资质,通过在零件编号前添加前缀以及“-1”后缀(例如JANTX1N5518B-1、JANTXV1N5546D-1等)。 - 电压选择从3.3到33 V。 - 标准电压公差为正负5%,带有“B”后缀。 - 提供正负2%或1%的紧密公差,分别带有“C”或“D”后缀。

6. 应用信息: - 灵活的轴向引脚安装终端。 - 对MIL-STD-750方法1020不敏感的ESD。 - 最小电容(见图3)。 - 本体辐射硬度如Microsemi MicroNote 050所述。

7. 封装信息: - 封装类型:DO-35(DO-204AH)轴向引脚玻璃封装。 - 封装尺寸:请参见文档最后一页上的尺寸图。
1N5521 价格&库存

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