1N5539B

• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN PER MIL-PRF-19500/437 JAN, JANTX AND JANTXV 1N5518 thru 1N5546D and 1N5518B-1 thru 1N5546B-1 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 500 mW @ +50°C Power Derating: 4 mW / °C above +50°C Forward Voltage @ 200mA: 1.1 volts maximum ELECTRICAL CHARACTERISTICS @ 25°C B-C-D SUFFIX MAXIMUM DC ZENER CURRENT 1ZM JEDEC TYPE NUMBER (NOTE 1) NOMINAL ZENER VOLTAGE VZ@ 1ZT (NOTE 2) VOLTS ZENER TEST CURRENT 1ZT MAX. ZENER IMPEDANCE B-C-D SUFFIX ZZT @ 1ZT (NOTE 3) OHMS MAXIMUM REVERSE LEAKAGE CURRENT lR (NOTE 4) VR = VOLTS NON & ASUFFIX B-C-DSUFFIX B-C-D SUFFIX MAX. NOISE DENSITY @1Z=250µ A ND REGULATION FACTOR ³VZ (NOTE 5) VOLTS LOW VZ CURRENT 1ZL mAdc µ Adc 5.0 3.0 1.0 3.0 2.0 2.0 2.0 1.0 1.0 0.5 0.5 0.1 0.05 0.05 0.05 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 mAdc µ V/ √ HZ mAdc 1N5518B 1N5519B 1N5520B 1N5521B 1N5522B 1N5523B 1N5524B 1N5525B 1N5526B 1N5527B 1N5528B 1N5529B 1N5530B 1N5531B 1N5532B 1N5533B 1N5534B 1N5535B 1N5536B 1N5537B 1N5538B 1N5539B 1N5540B 1N5541B 1N5542B 1N5543B 1N5544B 1N5545B 1N5546B 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 25.0 28.0 30.0 33.0 20 20 20 20 10 5.0 3.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 26 24 22 18 22 26 30 30 30 35 40 45 60 80 90 90 100 100 100 100 100 100 100 100 100 100 100 100 100 0.90 0.90 0.90 1.0 1.5 2.0 3.0 4.5 5.5 6.0 6.5 7.0 8.0 9.0 9.5 10.5 11.5 12.5 13.0 14.0 15.0 16.0 17.0 18.0 20.0 21.0 23.0 24.0 28.0 1.0 1.0 1.0 1.5 2.0 2.5 3.5 5.0 6.2 6.8 7.5 8.2 9.1 9.9 10.8 11.7 12.6 13.5 14.4 15.3 16.2 17.1 18.0 19.8 21.6 22.4 25.2 27.0 29.7 115 105 98 88 81 75 68 61 56 51 46 42 38 35 32 29 27 25 24 22 21 20 19 17 16 15 14 13 12 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 2.0 4.0 4.0 4.0 5.0 10 15 20 20 20 20 20 20 20 20 20 20 20 20 20 0.90 0.90 0.85 0.75 0.60 0.65 0.30 0.20 0.10 0.05 0.05 0.05 0.10 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.25 0.30 0.35 0.40 0.45 0.50 2.0 2.0 2.0 2.0 1.0 0.25 0.25 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 FIGURE 1 DESIGN DATA CASE: Hermetically sealed glass case. DO – 35 outline. LEAD MATERIAL: Copper clad steel. LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 250 °C/W maximum at L = .375 inch THERMAL IMPEDANCE: (ZOJX): 35 °C/W maximum POLARITY: Diode to be operated with the banded (cathode) end positive. MOUNTING POSITION: Any. NOTE 1 No Suffix type numbers are +20% with guaranteed limits for only VZ, lR, and VF. Units with “A” suffix are +10% with guaranteed limits for VZ, lR, and VF. Units with guaranteed limits for all six parameters are indicated by a “B” suffix for +5.0% units, “C” suffix for +2.0% and “D” suffix for +1.0%. Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25°C + 3°C. Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal to 10% of 1ZT. NOTE 2 NOTE 3 NOTE 4 NOTE 5 Reverse leakage currents are measured at VR as shown on the table. ³VZ is the maximum difference between VZ at lZT and VZ at lZL measured with the device junction in thermal equilibrium at the ambient temperature of +25°C +3°C. 6 L AKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (978) 689-0803 WEBSITE: http://www.microsemi.com 61 1N5518 400 0JL, Junction to Lead Thermal Resistance (°C/W) thru 1N5546D INCLUDING -1 VERSIONS 300 200 100 0 0.2 0.4 0.6 0.8 L, lead Length to Heat Sink (inches) 1.0 FIGURE 2 TYPICAL THERMAL RESISTANCE 1000 500 400 300 200 ZENER IMPEDANCE ZZT (OHMS) 100 50 40 30 20 10 5 4 3 2 1 .1 .2 .5 1 2 5 10 OPERATING CURRENT IZT (mA) 20 50 100 FIGURE 3 ZENER IMPEDANCE VS. OPERATING CURRENT 62