1N5613

1N5610 thru 1N5613 Available on commercial versions Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/434 DESCRIPTION This series of industry recognized voidless hermetically sealed unidirectional Transient Voltage Suppressor (TVS) designs is military qualified and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a Working Peak “Standoff” Voltage selection from 30.5 to 175 volts with 1500 watt ratings. They are very robust in hardglass construction and also use an internal metallurgical bond identified as “Category 1” for high reliability applications. These devices are also available in a surface mount MELF package configuration as a special order. Microsemi also offers numerous other TVS products to meet higher and lower peak pulse power and voltage ratings in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • • • High surge current and peak pulse power provides transient voltage protection for sensitive circuits. Triple-layer passivation. Internal “Category 1” metallurgical bonds. Voidless hermetically sealed glass package. JAN, JANTX, and JANTXV military qualifications available per MIL-PRF-19500/434. Further options for screening in accordance with MIL-PRF-19500 for JANS equivalent level by using a “SP” prefix. RoHS compliant versions available (commercial grade only). APPLICATIONS / BENEFITS Military and other high reliability transient protection. Extremely robust construction. Working Peak “Standoff” Voltage (V WM ) from 30.5 to 175 V. • • • • • • Available as 1500 watt Peak Pulse Power (P PP ). ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively. Secondary lightning protection per select levels in IEC61000-4-5. Flexible axial-leaded mounting terminals. Non-sensitive to ESD per MIL-STD-750 method 1020. Inherently radiation hard as described in Microsemi “MicroNote 050”. MAXIMUM RATINGS @ T A = 25 oC unless otherwise noted. Junction and Storage Temperature Peak Pulse Power @ t p = 1.0 ms Rated Forward Surge Current @ t p = 8.33 ms Impulse repetition rate (duty factor) (1) Steady-State Power (Figure 4) Solder Temperature @ 10 s Symbol Value TJ and TSTG P PP I FSM I PP PD TSP -55 to +175 1500 150 0.01 3.0 260 Unit o C W A (pk) % W o C Notes: 1. Derate at 20 mW/oC above T A = +25 oC. Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where T J(MAX) is not exceeded. T4-LDS-0241, Rev. 1 (112023) Also available by Special order: MELF Surface Mount • • • Parameters/Test Conditions “G” Package ©2011 Microsemi Corporation MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 4 1N5610 thru 1N5613 MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINATIONS: Axial-leads are tin/lead (Sn/Pb) over copper. RoHS compliant matte-tin available for commercial only. MARKING: Body painted and part number. POLARITY: Cathode band. Tape & Reel option: Standard per EIA-296. Consult factory for quantities. Weight: 1270 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5610 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level SP = Reference JANS Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Definition Symbol I (BR) ID I PP P PP TSP α V(BR) V (BR) VC V WM Breakdown Current: The current used for measuring Breakdown Voltage V (BR) . Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature. Peak Pulse Current: The peak current during the impulse. Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I PP . Temperature Solder Pad: The maximum solder temperature that can be safely applied to the terminal. Temperature Coefficient of Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current temperature. Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Maximum clamping voltage at specified I PP (Peak Pulse Current) at the specified pulse conditions. Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range. This is also referred to as Standoff Voltage. ELECTRICAL CHARACTERISTICS TYPE 1N5610 1N5611 1N5612 1N5613 MINIMUM BREAK DOWN VOLTAGE V (BR) @ 1.0 mA BREAKDOWN CURRENT MAXIMUM dc CURRENT o T A = +25 C I (BR) WORKING PEAK REVERSE VOLTAGE V WM MAX STANDOFF CURRENT ID @ V WM Volts 33.0 43.7 54.0 191 mA 75.0 53.0 43.0 12.5 V (pk) 30.5 40.3 49.0 175 µA 5 5 5 5 T4-LDS-0241, Rev. 1 (112023) MAXIMUM CLAMPING VOLTAGE VC @ 10/1000 µs V (pk) 47.6 63.5 78.5 265 ©2011 Microsemi Corporation MAXIMUM PEAK PULSE CURRENT I PP @8/20 µs @10/1000 µs A (pk) 193 136 116 33 A (pk) 32.0 24.0 19.0 5.7 MAXIMUM TEMP. COEF. OF V (BR) α V(BR) % / oC .093 .094 .096 .100 Page 2 of 4 1N5610 thru 1N5613 Pulse current (IP) in percent of IPP Peak Pulse Power PPP in kW GRAPHS Pulse Time (tp) FIG. 1 – Non-repetitive peak pulse power rating curve Peak Value IPP Pulse time duration (tp) is defined as that point where I P decays to 50% of peak value (I PP). Time (t) in microseconds FIG. 2 Pulse wave form for exponential surge for 10/1000 µs IPP – Peak Pulse Current - % IPP Peak Pulse Power (Ppp), Current (Ipp), and DC Power in Percent of 25oC Rating NOTE: Peak power defined as peak voltage times peak current. T – Time – µs T – Temperature – oC FIGURE 3 FIGURE 4 8/20 µs CURRENT IMPULSE WAVEFORM TEST WAVEFORM PARAMETERS: T4-LDS-0241, Rev. 1 (112023) DERATING CURVE t r = 8µsec t p = 20µsec ©2011 Microsemi Corporation Page 3 of 4 1N5610 thru 1N5613 PACKAGE DIMENSIONS Ltr BD BL LD LL LU Dimensions Inches Millimeters Min Max Min Max .150 .185 3.81 4.70 .160 .375 4.06 9.53 .037 .042 0.94 1.07 .900 1.300 22.86 33.02 .050 1.27 Notes 3 3 4 Schematic Symbol NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Package contour optional within BD and length BL. 4. W ithin this zone lead diameter may vary to allow for lead finishes and irregularities other than heat slugs. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0241, Rev. 1 (112023) ©2011 Microsemi Corporation Page 4 of 4