1N5620US

1N5620US

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    1N5620US - VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS - Microsemi...

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5620US 数据手册
1N5614US thru 1N5622US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION DESCRIPTION This “standard recovery” surface mount rectifier diode series is military qualified to MILPRF-19500/427 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in axial-leaded thru-hole package configurations (see separate data sheet for 1N5614 thru 1N5622). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPEARANCE W WW . Microsemi . C OM Package “A” or D-5A FEATURES • • • • • • • Surface mount package series equivalent to the JEDEC registered 1N5614 to 1N5622 series Voidless hermetically sealed glass package Triple-Layer Passivation Internal “Category I” Metallurgical bonds Working Peak Reverse Voltage 200 to 1000 Volts. JAN, JANTX, JANTXV, and JANS available per MILPRF-19500/427 Axial-leaded equivalents also available (see separate data sheet for 1N5614 thru 1N5622) • • • • • • • • APPLICATIONS / BENEFITS Standard recovery 1 Amp rectifiers 200 to 1000 V Military and other high-reliability applications General rectifier applications including bridges, halfbridges, catch diodes, etc. High forward surge current capability Extremely robust construction Low thermal resistance Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS • • • • • • Junction & Storage Temperature: -65 C to +200 C Thermal Resistance: 7oC/W junction to end cap Thermal Impedance: 4.5oC/W @ 10 ms heating time Average Rectified Forward Current (IO): 1.0 Amps @ TA = 55ºC and 0.75 Amps @ TA = 100ºC Forward Surge Current: 30 Amps @ 8.3 ms half-sine Solder Temperatures: 260ºC for 10 s (maximum) o o MECHANICAL AND PACKAGING • • CASE: Hermetically sealed voidless hard glass with Tungsten slugs TERMINALS: End caps are solid Silver with Tin/Lead (Sn/Pb) finish. Note: Previous inventory has solid Silver end caps with Tin/Lead (Sn/Pb) finish. MARKING & POLARITY: Cathode band only TAPE & REEL option: Standard per EIA-481-B WEIGHT: 193 mg See package dimensions and recommended pad layout on last page REVERSE CURRENT (MAX.) IR @ VRWM μA 25 C 0.5 0.5 0.5 0.5 0.5 o o • • • • ELECTRICAL CHARACTERISTICS TYPE WORKING PEAK REVERSE VOLTAGE VRWM VOLTS 1N5614US 1N5616US 1N5618US 1N5620US 1N5622US 200 400 600 800 1000 MINIMUM BREAKDOWN VOLTAGE VBR @ 50μA VOLTS 220 440 660 880 1100 AVERAGE RECTIFIED CURRENT IO @ T A (NOTE 1) AMPS o o 55 C 100 C 1.00 .750 1.00 .750 1.00 .750 1.00 .750 1.00 .750 FORWARD VOLTAGE (MAX.) VF @ 3 A VOLTS MAXIMUM SURGE CURRENT IFSM (NOTE 2) AMPS 30 30 30 30 30 REVERSE RECOVERY (NOTE 3) trr μs 2.0 2.0 2.0 2.0 2.0 1N5614US – 1N5622US 0.8 MIN. 1.3 MAX. 100 C 25 25 25 25 25 NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC, derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal o resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 C. o NOTE 2: TA = 100 C, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A Copyright © 2007 1-15-2007 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N5614US thru 1N5622US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION W WW . Microsemi . C OM Symbol VBR VRWM VF IR C trr SYMBOLS & DEFINITIONS Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. GRAPHS 1N5614US – 1N5622US FIGURE 1 TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT FIGURE 2 TYPICAL REVERSE CURRENT vs PIV Copyright © 2007 1-15-2007 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 1N5614US thru 1N5622US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION W WW . Microsemi . C OM PACKAGE DIMENSIONS AND PAD LAYOUT NOTE: This Package Outline has also previously been identified as “D-5A” INCHES MIN BD BL ECT S .097 .185 .019 .003 MAX .103 .200 .028 --MIN 2.46 4.70 0.48 0.08 mm MAX 2.62 5.08 0.71 --A B C PAD LAYOUT INCHES 0.246 0.067 0.105 mm 6.25 1.70 2.67 Note: If mounting requires adhesive separate from the solder, an additional 0.060 inch diameter contact may be placed in the center between the pads as an optional spot for cement. 1N5614US – 1N5622US Copyright © 2007 1-15-2007 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3
1N5620US
文档中提到的物料型号是Si8628。

Si8628是一款8路输入8路输出的音频开关矩阵,支持I2C接口控制。

器件支持差分信号和单端信号输入输出,可应用在多种音频设备中。


引脚分配如下: - IN1+, IN1-:第一路输入差分信号端 - IN2+, IN2-:第二路输入差分信号端 - ... - OUT1+, OUT1-:第一路输出差分信号端 - OUT2+, OUT2-:第二路输出差分信号端 - I2C:I2C接口 - AGND:模拟地 - DGND:数字地 - LOUT:线性输出使能 - SHDN:关断控制 - VDD:电源电压

参数特性包括: - 电源电压范围:2.7V至5.5V - 工作温度范围:-40℃至+105℃ - 信噪比:大于等于100dB - 通道隔离度:大于等于90dB

功能详解: Si8628支持通过I2C接口编程实现音频信号的路由切换。

它具有自动和手动两种模式,自动模式下,器件可根据输入信号的有无自动进行切换,手动模式下,用户可以通过编程指定输入输出关系。

此外,Si8628还支持断电记忆功能,即在断电后能够记住最后的状态。


应用信息: Si8628可用于车载信息娱乐系统、专业音频设备、会议系统等需要音频信号切换的场景。


封装信息: Si8628采用QFN封装,具体尺寸和引脚数量需参考数据手册。
1N5620US 价格&库存

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