1N5806

1N5802 thru 1N5806 VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION DESCRIPTION These “Ultrafast Recovery” rectifier diodes are military qualified to MIL-PRF-19500/477 and are ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. They are also available in surface-mount packages (see separate data sheet for 1N5802US thru 1N5806US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast in thru-hole and surfacemount packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPEARANCE WWW . Microsemi . C OM “A” Package FEATURES • • • • • • Popular JEDEC registered 1N5802 to 1N5806 series Voidless hermetically sealed glass package Extremely robust construction Triple-layer passivation Internal “Category I” Metallurgical bonds JAN, JANTX, JANTXV, and JANS available per MIL-PRF19500/477 • Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N5802US thru 1N5806US) APPLICATIONS / BENEFITS • Ultrafast recovery 2.5 Amp rectifier series 50 to 150V • Military and other high-reliability applications • Switching power supplies or other applications requiring extremely fast switching & low forward loss • High forward surge current capability • Low thermal resistance • Controlled avalanche with peak reverse power capability • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS • • • • • • • • Junction Temperature: -65 C to +175 C Storage Temperature: -65oC to +175oC Average Rectified Forward Current (IO): 2.5 A @ TL = 75ºC Thermal Resistance: 36 ºC/W junction to lead (L=.375 in) Thermal Impedance: 4.5oC/W @ 10 ms heating time Forward Surge Current: 35 Amps @ 8.3 ms half-sine Capacitance: 25 pF @ VR = 10 Volts, f = 1 MHz Solder temperature: 260ºC for 10 s (maximum) o o MECHANICAL AND PACKAGING • • CASE: Hermetically sealed voidless hard glass with Tungsten slugs (package dimensions on last page) TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb) over Copper. Note: Previous JANS inventory had solid Silver axial-leads and no finish. MARKING: Body painted and part number, etc. POLARITY: Cathode indicated by band Tape & Reel option: Standard per EIA-296 Weight: 340 mg • • • • ELECTRICAL CHARACTERISTICS WORKING PEAK REVERSE VOLTAGE VRWM VOLTS BREAKDOWN VOLTAGE (MIN.) @ 100μA VBR VOLTS AVERAGE RECTIFIED CURRENT IO1 @ TL=+75ºC (NOTE 1) AMPS AVERAGE RECTIFIED CURRENT IO2 @ TA=+55ºC (Note 2) AMPS MAXIMUM FORWARD VOLTAGE @1A (8.3 ms pulse) VF VOLTS o o 25 C 100 C 0.875 0.800 REVERSE CURRENT (MAX) @ VRWM IR SURGE CURRENT (MAX) IFSM (NOTE 3) REVERSE RECOVERY TIME (MAX) (NOTE 4) trr ns 25 25 25 25 25 TYPE 1N5802 – 1N5806 AMPS μA o o 25 C 100 C 1N5802 50 55 2.5 1.0 1 50 35 1N5803 75 80 2.5 1.0 1 50 35 1N5804 100 110 2.5 1.0 0.875 0.800 1 50 35 1N5805 125 135 2.5 1.0 1 50 35 1N5806 150 160 2.5 1.0 0.875 0.800 1 50 35 NOTE 1: IO1 is rated at 2.5 A @ TL = 75ºC at 3/8 inch lead length. Derate at 25 mA/ºC for TL above 75ºC. NOTE 2: IO2 is rated at 1.0 A @ TA = 55ºC for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175ºC. Derate at 8.33 mA/ºC for TA above 55ºC. o NOTE 3: TA = 25 C @ IO = 1.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals NOTE 4: IF = 0.5 A, IRM = 0.5 A, IR(REC) = .05 A Copyright © 2007 1-15-2007 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N5802 thru 1N5806 VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION Symbol VBR VRWM IO VF IR C trr SYMBOLS & DEFINITIONS Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range Average Rectified Output Current: Output Current Averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs. W WW . Microsemi . C OM GRAPHS FIGURE 1 OUTPUT CURRENT vs. LEAD TEMP. PACKAGE DIMENSIONS inches/[mm] 1N5802 – 1N5806 NOTE: Lead tolerance = +0.002/-0.003 inches Copyright © 2007 1-15-2007 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2