1N5811US

1N5807US thru 1N5811US SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION DESCRIPTION This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-PRF-19500/477 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidlessglass construction using an internal “Category I” metallurgical bond. These devices are also available in axial-leaded package configurations (see separate data sheet for 1N5807 thru 1N5811). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast, and ultrafast device types in both throughhole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPEARANCE W W W . Microsemi . C O M Package “E” or D-5B FEATURES • • • • • • • Surface mount package series equivalent to the JEDEC registered 1N5807 to 1N5811 series Voidless-hermetically-sealed glass package Extremely robust construction Triple-layer passivation Internal “Category I” Metallurgical bonds JAN, JANTX, JANTXV, and JANS available per MILPRF-19500/477 Axial-leaded equivalents also available (see separate data sheet for 1N5807 thru 1N5811) • • • • • • • APPLICATIONS / BENEFITS Ultrafast recovery 6 Amp rectifiers series 50 to 150 V Military and other high-reliability applications Switching power supplies or other applications requiring extremely fast switching & low forward loss High forward surge current capability Low thermal resistance Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS • • • • • • • Operating Temperature: -65 C to +175 C. Storage Temperature: -65oC to +175oC. Average Rectified Forward Current (IO): 6 Amps @ TEC = 75ºC End Cap temperature (see note 1) Thermal Resistance: 10 ºC/W junction to end cap Thermal Impedance: 1.5 ºC/W @ 10 ms heating time Forward Surge Current (8.3 ms half sine) 125 Amps Solder temperature: 260ºC for 10 s (maximum) o o MECHANICAL AND PACKAGING • • • • • • CASE: Hermetically sealed voidless hard glass with Tungsten slugs TERMINALS: End caps are solid Silver with Tin/Lead (Sn/Pb) finish MARKING & POLARITY: Cathode band only Tape & Reel option: Standard per EIA-481-B Weight: 539 mg See package dimensions and recommended pad layout on last page REVERSE CURRENT (MAX) @ VRWM IR µA o 100 C 150 150 SURGE CURRENT (MAX) IFSM (NOTE 3) AMPS 125 125 REVERSE RECOVERY TIME (MAX) (NOTE 4) trr ns 30 30 ELECTRICAL CHARACTERISTICS WORKING PEAK REVERSE VOLTAGE VRWM VOLTS 1N5807US 1N5809US 50 100 BREAKDOWN VOLTAGE (MIN.) @ 100µA VBR VOLTS 60 110 AVERAGE RECTIFIED CURRENT IO1 @TEC=75ºC (Note 1) AMPS 6.0 6.0 AVERAGE RECTIFIED CURRENT IO2 @TA=55ºC (Note 2) AMPS 3.0 3.0 MAXIMUM FORWARD VOLTAGE @4A (8.3 ms pulse) VF VOLTS o o 25 C 100 C 0.875 0.800 0.875 0.800 TYPE 1N5807US–1N5811US 25 C 5 5 o 1N5811US 150 160 6.0 3.0 0.875 0.800 5 150 125 30 NOTE 1: Rated at TEC = 75ºC. Derate at 60 mA/ºC for TEC above 75ºC NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175ºC o NOTE 3: TA = 25 C @ IO = 3.0 A and VRW M for ten 8.3 ms surges at 1 minute intervals NOTE 4: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min Copyright  2004 1-14-2005 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N5807US thru 1N5811US SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION W W W . Microsemi . C O M Symbol VBR VRWM VF IR C trr SYMBOLS & DEFINITIONS Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is reached. GRAPHS FIGURE 1 TYPICAL FORWARD CURRENT vs. FORWARD VOLTAGE FIGURE 2 TYPICAL REVERSE CURRENT vs. VOLTAGE 1N5807US–1N5811US FIGURE 3 FORWARD PULSE CURRENT vs. DURATION Copyright  2004 1-14-2005 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 1N5807US thru 1N5811US SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION W W W . Microsemi . C O M FIGURE 4 MULTIPLE SURGE CURRENT vs. DURATION PACKAGE DIMENSIONS AND PAD LAYOUT NOTE: This Package Outline has also previously been identified as “D-5B” INCHES MIN BL BD ECT S .205 .137 .019 .003 MAX .225 .142 .028 --MIN 5.21 3.48 0.48 0.08 mm MAX 5.72 3.61 0.711 --A B C PAD LAYOUT INCHES 0.288 0.070 0.155 mm 7.32 1.78 3.94 1N5807US–1N5811US Note: If mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. Copyright  2004 1-14-2005 REV B Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3