1N6101_09

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N6101 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them either to the positive side of the power supply line or to ground (see figure 1). An external TVS diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. They may also be used in fast switching core-driver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as high-density packaging and improved reliability. This is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in PC board mounting. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com 16-PIN Ceramic DIP FEATURES Hermetic Ceramic Package Isolated Diodes to Eliminate Cross-Talk Voltages High Breakdown Voltage VBR > 75 V at 5 μA Low Leakage IR < 100nA at 40 V Low Capacitance C < 4.0 pF Switching Speeds less than 10 ns Options for screening in accordance with MIL-PRF-19500/474 for JAN, JANTX, JANTXV, the prefixes respectively to part numbers. T4-LDS-0083 Rev. 1 (082463) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 APPLICATIONS / BENEFITS High Frequency Data Lines RS-232 & RS-422 Interface Networks Ethernet: 10 Base T Computer I/O Ports LAN Switching Core Drivers IEC 61000-4 Compatible (see circuit in figure 1) 61000-4-2 ESD : Air 15kV, contact 8kW 61000-4-4 (EFT) : 40A – 5/50 ns 61000-4-5 (surge): 12A 8/20 μs MAXIMUM RATINGS Reverse Breakdown Voltage 75 V (Notes 1 & 2) Continuous Forward Current 300 mA dc (Notes 1 & 3) Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1) 400 mW Power Dissipation per Junction @ 25oC 600 mW Power Dissipation per Package @ 25oC (Note 4) Operating Junction Temperature range –65° to +150oC Storage Temperature range of –65° to +200oC NOTE 1: NOTE 2: NOTE 3: NOTE 4: Each Diode Pulsed: PW = 100 ms max; duty cycle ≤ 20% Derate at 2.4 mA/°C above +25°C Derate at 4.8 mW/°C above +25°C MECHANICAL AND PACKAGING 16-PIN Ceramic DIP Weight 2.09 grams (approximate) Marking: Logo, part number, date code Pin #1 to the left of the indent on top of package Carrier Tubes; 25 pcs (standard) T4-LDS-0083 Rev. 1 (082463) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified MAXIMUM FORWARD VOLTAGE VF1 IF = 100 mA (Note 1) MAXIMUM REVERSE CURRENT IR1 VR = 40 V MAXIMUM REVERSE CURRENT IR2 VR = 20 V MAXIMUM CAPACITANCE (PIN TO PIN) MAXIMUM FORWARD RECOVERY TIME tfr IF = 100 mA MAXIMUM REVERSE RECOVERY TIME trr IF = IR = 10 mAdc irr = 1 mAdc RL = 100 ohms MAXIMUMF ORWARD VOLTAGE MATCH VF5 IF = 10 mA Ct VR = 0 V F = 1 MHz PART NUMBER V 1 µA 0.1 nA 25 pF 4.0 ns 15 ns 10 mV 5 1N6101 NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle ≤ 2%, 90 µs after leading edge. SYMBOLS & DEFINITIONS Symbol VBR VF IR Ct DEFINITION Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Capacitance: The capacitance of the diode as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads. T4-LDS-0083 Rev. 1 (082463) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 SCHEMATIC CIRCUIT Supply rail (+VCC) I/O Port GND (or -VCC) STEERING DIODE APPLICATION FIGURE 1 PACKAGE DIMENSIONS .200 MAX .200 .100 .023 .014 .070 .030 .785 MAX .100 BSC 1 2 3 4 5 6 7 8 .310 .220 16 15 14 13 12 11 10 9 .005 MIN .060 .015 .320 .290 T4-LDS-0083 Rev. 1 (082463) Page 4 of 4