1N6462

1N6462

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    1N6462 - Voidless-Hermetically-Sealed Unidirectional Transient Suppressors - Microsemi Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
1N6462 数据手册
1N6461 thru 1N6468 Voidless-Hermetically-Sealed Unidirectional Transient Suppressors SCOTTSDALE DIVISION DESCRIPTION This series of industry recognized voidless-hermetically-sealed Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL-PRF19500/551 and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6 Volts with 500 W ratings. They are very robust in hard-glass construction and also use an internal metallurgical bond identified as Category I for high reliability applications. The 500 W series is military qualified to MIL-PRF-19500/551. These devices are also available in a surface mount MELF package configuration by adding a “US” suffix (see separate data sheet for 1N6461US thru 1N6468US). Microsemi also offers numerous other TVS products to meet higher and lower peak pulse power and voltage ratings in both through-hole and surface-mount packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPEARANCE “E” Package W WW . Microsemi . C OM FEATURES • • • • • High surge current and peak pulse power provides transient voltage protection for sensitive circuits Triple-layer passivation Internal “Category I” metallurgical bonds Voidless hermetically sealed glass package JAN/TX/TXV military qualifications available per MILPRF-19500/551 by adding JAN, JANTX, or JANTXV prefix Further options for screening in accordance with MILPRF-19500 for JANS by using a “SP” prefix, e.g. SP6462, SP6468, etc. Surface Mount equivalents are also available in a square-end-cap MELF configuration with a “US” suffix (see separate data sheet) • • • • • • • • • APPLICATIONS / BENEFITS Military and other high reliability transient protection Extremely robust construction Working Peak “Standoff” Voltage (VWM) from 5.0 to 51.6 V Available as 500 W Peak Pulse Power (PPP) ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively Secondary lightning protection per select levels in IEC61000-4-5 Flexible axial-leaded mounting terminals Nonsensitive to ESD per MIL-STD-750 Method 1020 Inherently radiation hard as described in Microsemi MicroNote 050 • • MAXIMUM RATINGS o o MECHANICAL AND PACKAGING • CASE: Hermetically sealed voidless hard glass • Operating & Storage Temperature: -55 C to +175 C o with Tungsten slugs • Peak Pulse Power at 25 C: 500 Watts @ 10/1000 µs • TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb) (also see Figures 1,2 and 4) over copper • Impulse repetition rate (duty factor): 0.01% • MARKING: Body painted and part number, etc. • Forward Surge Current: 80 Amps@ 8.33 ms one-half • POLARITY: Cathode band sine wave • Forward Voltage: 1.5 V @ 1 Amp dc and 4.8 V at 100 • Tape & Reel option: Standard per EIA-296 Amps (pulsed) • Weight: 750 mg • Steady-State Power: 2.5 Watts @ TA = 25oC (see • See package dimensions on last page note below and Figure 4) o • Thermal Resistance @ 3/8 inch lead length: 60 C/W • Solder Temperatures: 260oC for 10 s (maximum) NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(MAX) is not exceeded. 1N6461 – 1N6468 1N6469 – 1N6476 Copyright © 2008 6-11-2008 REV C Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N6461 thru 1N6468 Voidless-Hermetically-Sealed Unidirectional Transient Suppressors SCOTTSDALE DIVISION ELECTRICAL CHARACTERISTICS BREAK DOWN VOLTAGE V(BR) MIN. Volts 5.6 6.5 13.6 16.4 27.0 33.0 43.7 54.0 BREAKDOWN CURRENT I (BR) WORKING PEAK VOLTAGE VWM Vdc 5 6 12 15 24 30.5 40.3 51.6 MAX LEAKAGE CURRENT ID μAdc 3000 2500 500 500 50 3 2 2 MAXIMUM CLAMPING VOLTAGE VC MAXIMUM PEAK PULSE CURRENT IPP @8/20 µs A(pk) 315 258 125 107 69 63 45 35 @10/1000 µs A(pk) 56 46 22 19 12 11 8 6 MAXIMUM TEMP. COEF. OF V(BR) %/ C -.03, +0.04 0.06 0.085 0.085 .096 .098 .101 .103 o W WW . Microsemi . C OM TYPE @ 10/1000 µs V(pk) 9.0 11.0 22.6 26.5 41.4 47.5 63.5 78.5 1N6461 1N6462 1N6463 1N6464 1N6465 1N6466 1N6467 1N6468 mAdc 25 20 5 5 2 1 1 1 Symbol VBR VWM ID VC PPP SYMBOLS & DEFINITIONS Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range. This is also referred to as Standoff Voltage. Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature. Maximum clamping voltage at specified IPP (Peak Pulse Current) at the specified pulse conditions. Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP. GRAPHS 1N6461 – 1N6468 1N6469 – 1N6476 FIGURE 1 PEAK PULSE POWER vs. PULSE TIME Copyright © 2008 6-11-2008 REV C FIGURE 2 10/1000 µs CURRENT IMPULSE WAVEFORM Page 2 Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 1N6461 thru 1N6468 Voidless-Hermetically-Sealed Unidirectional Transient Suppressors SCOTTSDALE DIVISION W WW . Microsemi . C OM Peak Pulse Power (Ppp), Current (Ipp), And DC Power in Percent of 25oC Rating FIGURE 3 8/20 µs CURRENT IMPULSE WAVEFORM (per MIL-PRF-19500/551 T – Temperature – oC FIGURE 4 DERATING CURVE PACKAGE DIMENSIONS Inches [mm] 1N6461 – 1N6468 1N6469 – 1N6476 Lead Tolerance = + .002 -.003 in *Includes sections of the lead or fillet over which the lead diameter is uncontrolled. Copyright © 2008 6-11-2008 REV C Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3
1N6462
物料型号为:SN74LS245N 器件简介:SN74LS245N 是一款高速8位总线收发器,具有8个同相三态输出,支持双向数据传输。

引脚分配:1-G1, 2-A1, 23-Vcc, 24-G2A, 25-B8, 14-Y1, 15-Y2, 16-Y3, 17-Y4, 18-Y5, 19-Y6, 20-Y7, 21-Y8, 22-G2B 参数特性:工作电压范围2.0V至7.0V,工作温度范围-40℃至+85℃,封装类型DIP-20 功能详解:支持双向数据通信,具有总线控制功能,允许在单总线上进行多主设备通信。

应用信息:广泛应用于计算机系统、通信设备、工业控制系统等领域。

封装信息:DIP-20封装,适用于通过引脚进行物理连接的场合。
1N6462 价格&库存

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