1N6463

1N6461 – 1N6468 Available on commercial versions Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/551 DESCRIPTION This series of 500 watt voidless hermetically sealed unidirectional Transient Voltage Suppressors (TVS) are military qualified to MIL-PRF-19500/551 and are ideal for high-reliability applications where a failure cannot be tolerated. Working peak “standoff” voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing and internal Category 1 metallurgical bonds. These devices are also available in a surface mount MELF package configuration. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • • • • • Popular JEDEC registered 1N6461 thru 1N6468 series. Available as 500 W peak pulse power (P PP ). Working peak “standoff” voltage (V WM ) from 5.0 to 51.6 V. High surge current and peak pulse power provides transient voltage protection for sensitive circuits. Triple-layer passivation. Internal “Category 1” metallurgical bonds. Voidless hermetically sealed glass package. JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/551. Other screening in reference to MIL-PRF-19500 is also available. (See part nomenclature for all available options.) RoHS compliant versions available (commercial grade only). Also available in: “B” SQ-MELF Package (surface mount) 1N6461US - 1N6468US APPLICATIONS / BENEFITS • • • • • • • “B” Package Military and other high-reliability transient protection. Extremely robust construction. ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively. Protection from secondary effects of lightning per select levels in IEC61000-4-5. Flexible axial-leaded mounting terminals. Nonsensitive to ESD per MIL-STD-750 method 1020. Inherently radiation hard as described in Microsemi “MicroNote 050”. MAXIMUM RATINGS @ 25 ºC Parameters/Test Conditions Junction and Storage Temperature (1) Thermal Resistance, Junction to Lead Forward Surge Current @ 8.3 ms half-sine Forward Voltage @ 1 Amp Peak Pulse Power @ 10/1000 µs (2) Reverse Power Dissipation Solder Temperature @ 10 s Notes: Symbol T J and T STG R ӨJL I FSM VF P PP Value -55 to +175 60 80 1.5 500 PR 2.5 260 1. At L = 0.375 inch (9.53 mm) from body. 2. Derate at 16.7 mW/oC (see figure 4). T4-LDS-0286, Rev. 1 (4/24/13) Unit o C ºC/W A V W W C o MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com ©2013 Microsemi Corporation Page 1 of 6 1N6461 – 1N6468 MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: Axial-leads are tin/lead over copper. RoHS compliant matte-tin is available for commercial grade only. MARKING: Body paint and part number. POLARITY: Cathode band. TAPE & REEL option: Standard per EIA-296. Contact factory for quantities. WEIGHT: Approximately 750 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N6461 e3 Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level CDS (reference JANS) Blank = commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Definition Symbol α V(BR) V (BR) V WM ID I PP VC P PP Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in temperature expressed in %/°C or mV/°C. Breakdown Voltage: The voltage across the device at a specified current I (BR) in the breakdown region. Rated working standoff voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that may be continuously applied over the standard operating temperature. Standby Current: The current through the device at rated stand-off voltage. Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an impulse current (I PP ) for a specified waveform. Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The impulse power is the maximum-rated value of the product of I PP and V C . T4-LDS-0286, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 2 of 6 1N6461 – 1N6468 ELECTRICAL CHARACTERISTICS TYPE 1N6461 1N6462 1N6463 1N6464 1N6465 1N6466 1N6467 1N6468 MINIMUM BREAK DOWN VOLTAGE BREAKDOWN CURRENT I (BR) V (BR) @ I (BR) RATED WORKING STANDOFF VOLTAGE MAXIMUM STANDBY CURRENT MAXIMUM CLAMPING VOLTAGE ID V WM @ V WM VC @ 10/1000 µs Volts mA V (pk) 5.6 6.5 13.6 16.4 27.0 33.0 43.7 54.0 25 20 5 5 2 1 1 1 5 6 12 15 24 30.5 40.3 51.6 T4-LDS-0286, Rev. 1 (4/24/13) µA 3000 2500 500 500 50 3 2 2 MAXIMUM PEAK IMPULSE CURRENT I PP MAXIMUM TEMP. COEF. OF α V(BR) V (pk) @ 8/20 µs A (pk) @ 10/1000 µs A (pk) %/oC 9.0 11.0 22.6 26.5 41.4 47.5 63.5 78.5 315 258 125 107 69 63 45 35 56 46 22 19 12 11 8 6 -0.03, +0.045 +0.060 +0.085 +0.085 +0.096 +0.098 +0.101 +0.103 ©2013 Microsemi Corporation Page 3 of 6 1N6461 – 1N6468 Reverse Peak Pulse Power (PPP) in kW GRAPHS Pulse Time (tp) IPP – Peak Pulse Current - % IPP FIGURE 1 Peak Pulse Power vs Pulse Time Time (t) in Milliseconds FIGURE 2 10/1000 µs Current Impulse Waveform T4-LDS-0286, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 4 of 6 1N6461 – 1N6468 IPP – Peak Pulse Current - % IPP GRAPHS Time (t) in Microseconds Peak Pulse Power (PPP), Current (IPP), And DC Power in Percent of 25°C Rating FIGURE 3 8/20 µs Current Impulse Waveform T – Temperature - °C FIGURE 4 Derating Curve T4-LDS-0286, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 5 of 6 1N6461 – 1N6468 PACKAGE DIMENSIONS Symbol BD BL LD LL L1 Dimensions Inches Millimeters Min Max Min Max 0.115 0.145 2.92 3.68 0.150 0.300 3.81 7.62 0.037 0.042 0.94 1.07 0.900 1.30 22.86 33.02 0.050 1.27 Notes 3,4 4 4 4 NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for information only. 3. Dimension BD shall be measured at the largest diameter. 4. Dimension BL includes dimension L1 region in which the diameter may vary from BD maximum to LD minimum. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0286, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 6 of 6