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1N6630

1N6630

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    1N6630 - VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS - Microsemi Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
1N6630 数据手册
1N6626 thru 1N6631 VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION DESCRIPTION This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N6626US thru 1N6631US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPEARANCE W W W . Microsemi . C O M “E” Package FEATURES • • • • • • • Popular JEDEC registered 1N6626 to 1N6631 series Voidless hermetically sealed glass package Extremely robust construction Triple-layer passivation Internal “Category I” Metallurgical bonds JAN, JANTX, and JANTXV available per MIL-PRF19500/590 Further options for screening in accordance with MILPRF-19500 for JANS by using a “MSP” prefix, e.g. MSP6626, MSP6629, etc. Surface mount equivalents also available in a square endcap MELF configuration with “US” suffix (see separate data sheet for 1N6626US thru 1N6631US) • • • • • • • APPLICATIONS / BENEFITS Ultrafast recovery rectifier series 200 to 1000 V Military and other high-reliability applications Switching power supplies or other applications requiring extremely fast switching & low forward loss High forward surge current capability Low thermal resistance Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi MicroNote 050 • MAXIMUM RATINGS • • • Junction Temperature: -65 C to +175 C Storage Temperature: -65oC to +175oC Peak Forward Surge Current @ 25oC: 75A (except 1N6631 which is 60A) Note: Test pulse = 8.3ms, half-sine wave. Average Rectified Forward Current (IO) at TL= +75oC (L=.375 inch from body): 1N6626 thru 1N6628 4.0A 1N6629 thru 1N6630 3.0A 1N6631 2.5A (Derate linearly at 1.0%/oC for TL> +75oC) Average Rectified Forward Current (IO) at TA=25oC: 1N6626 thru 1N6628 2.0A 1N6629 thru 1N6631 1.4A (Derate linearly at 0.67%/ oC for TA>+25oC. This IO rating is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) is not exceeded.) Thermal Resistance L= 0.375 inch (RθJL): 22oC/W Capacitance at VR= 10 V: 40 pF Solder temperature: 260oC for 10 s (maximum) o o MECHANICAL AND PACKAGING • • CASE: Hermetically sealed voidless hard glass with Tungsten slugs TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb) over Copper except for JANS with solid Silver (Ag) and no finish MARKING: Body painted and part number, etc. POLARITY: Cathode indicated by band Tape & Reel option: Standard per EIA-296 Weight: 750 mg See package dimensions on last page • • • • • • 1N6626 thru 1N6631 • • • • Copyright  2004 11-01-2004 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N6626 thru 1N6631 VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION W W W . Microsemi . C O M ELECTRICAL CHARACTERISTICS @ 25oC TYPE NUMBER MINIMUM BREAKDOWN VOLTAGE VR IR = 50 µA MAXIMUM FORWARD VOLTAGE VF @ IF WORKING PEAK REVERSE VOLTAGE VRWM MAXIMUM REVERSE CURRENT IR @ VRWM TA=25oC TA=150oC MAXIMUM REVERSE RECOVERY TIME (LOW CURRENT) trr Note 1 MAXIMUM REVERSE RECOVERY TIME (HIGH CURRENT) trr Note 2 PEAK RECOVERY CURRENT IRM (rec) IF = 2 A, 100 A/µs Note 2 FORWARD RECOVERY VOLTAGE VFRM Max IF = 0.5 A tr = 12 ns V V@A V@A V ns ns µA µA 1N6626 220 1.35V @ 1.2A 1.50V @ 4.0A 200 2.0 500 30 45 1N6627 440 1.35V @ 1.2A 1.50V @ 4.0A 400 2.0 500 30 45 1N6628 660 1.35V @ 1.2A 1.50V @ 4.0A 600 2.0 500 30 45 1N6629 880 1.40V @ 1.0A 1.70V @ 3.0A 800 2.0 500 50 60 1N6630 990 1.40V @ 1.0A 1.70V @ 3.0A 900 2.0 500 50 60 1N6631 1100 1.60V @ 1.0A 1.95V @ 2.0A 1000 4.0 600 60 80 NOTE 1: Low Current Reverse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750, Method 4031, Condition B. NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, 100 A/µs MIL-STD-750, Method 4031, Condition D. A 3.5 3.5 3.5 4.2 4.2 5.0 V 8 8 8 12 12 20 Symbol VBR VRWM VF IR C trr SYMBOLS & DEFINITIONS Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is reached. CHARTS AND GRAPHS 1N6626 thru 1N6631 FIGURE 1 Typical Forward Current vs Forward Voltage Copyright  2004 11-01-2004 REV A FIGURE 2 Typical Forward Current vs Forward Voltage Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 1N6626 thru 1N6631 VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION W W W . Microsemi . C O M FIGURE 3 Typical Reverse Current vs. Applied Reverse Voltage FIGURE 4 Typical Reverse Current vs. Applied Reverse Voltage 10ms 1N6626 thru 1N6631 FIGURE 5 Forward Pulse Current vs. Pulse Duration FIGURE 6 Reverse Pulse Power vs. Pulse Duration Copyright  2004 11-01-2004 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3 1N6626 thru 1N6631 VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION PACKAGE DIMENSIONS W W W . Microsemi . C O M NOTE: Lead tolerances +0.002/-0.003 inches 1N6626 thru 1N6631 Copyright  2004 11-01-2004 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 4
1N6630
物料型号: - 1N6626至1N6631系列

器件简介: - 这是一系列“超快速回复”整流二极管,符合军用标准MIL-PRF19500/590,适用于高可靠性应用,工作峰值反向电压从200至1000伏,采用无空洞玻璃结构和内部“Category I”冶金键合。

引脚分配: - 轴向引脚为镀锡/铅(Sn/Pb)铜,除了JANS型号使用纯银(Ag)且无表面处理。

参数特性: - 工作结温:-65°C至+175°C - 存储温度:-65°C至+175°C - 峰值正向浪涌电流@25°C:75A(1N6631为60A) - 平均整流正向电流(IO)在TL=+75°C(L=0.375英寸距离本体):1N6626至1N6628为4.0A,1N6629至1N6630为3.0A,1N6631为2.5A - 热阻(L=0.375英寸,RGJL):22°C/W - 电容在VR=10V时:40pF - 焊接温度:260°C持续10秒(最大)

功能详解: - 这些器件具有超快速回复功能,适用于需要极快速开关和低正向损耗的应用,如开关电源。 - 具有三层钝化和内部冶金键合,具有高正向浪涌电流能力和低热阻。 - 符合JAN, JANTX, 和JANTXV标准。

应用信息: - 适用于军事和其他高可靠性应用,如开关电源或其他需要极快速开关的应用。

封装信息: - 采用无空洞硬玻璃封装,带有钨塞。 - 也提供表面贴装MELF封装配置,型号后缀为“US”(例如1N6626US至1N6631US)。
1N6630 价格&库存

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