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1N6659

1N6659

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    1N6659 - DUAL ULTRAFAST POWER RECTIFIER - Microsemi Corporation

  • 数据手册
  • 价格&库存
1N6659 数据手册
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com DUAL ULTRAFAST POWER RECTIFIER Qualified per MIL-PRF-19500/616 DEVICES LEVELS 1N6657 1N6658 1N6659 1N6657R 1N6658R 1N6659R JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode) Parameters / Test Conditions Peak Repetitive Reverse Voltage 1N6657, R 1N6658, R 1N6659, R TC = +100°C Symbol VRWM IF IFSM Rθjc Value 100 150 200 15 150 2.3 Unit Vdc Adc A(pk) °C/W TO-254 Average Forward Current (1) Peak Surge Forward Current Thermal Resistance - Junction to Case Note: (1) Derate @ 300mA/°C above TC = 100°C (2) Pulse Test; 300µS, duty cycle ≤ 2% ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Breakdown Voltage (2) IR = 500µAdc Forward Voltage (2) IF = 10Adc IF = 20Adc Reverse Leakage Current (2) VR = 100V VR = 150V VR = 200V Reverse Leakage Current VR = 100V, TC = +100°C VR = 150V, TC = +100°C VR = 200V, TC = +100°C Reverse Recovery Time IF = 1.0A, IR = 1A, IRR = 100mA Junction Capacitance VR = 10Vdc, f = 1.0MHz, VSIG = 50mV(p-p) max 1N6657, R 1N6658, R 1N6659, R VBR VF1 VF2 1N6657, R 1N6658, R 1N6659, R 1N6657, R 1N6658, R 1N6659, R 100 150 200 1.0 1.2 Vdc 1N6657, 1N6658, 1N6659 Symbol Min. Max. Unit •1 •2 •3 Vdc IR1 10 µAdc •1 •2 •3 1N6657R, 1N6658R, 1N6659R IR2 1.0 mAdc trr CJ 35 150 nS pF T4-LDS-0068 Rev. 1 (082207) Page 1 of 1
1N6659 价格&库存

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