TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
DUAL ULTRAFAST POWER RECTIFIER
Qualified per MIL-PRF-19500/617 DEVICES LEVELS
1N6672 1N6673 1N6674
1N6672R 1N6673R 1N6674R
JAN JANTX JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode) Parameters / Test Conditions Peak Repetitive Reverse Voltage 1N6672, R 1N6673, R 1N6674, R TC = +100°C Symbol VRWM IF IFSM Rθjc Value 300 400 500 15 150 2.0 Unit Vdc Adc A(pk) °C/W TO-254
Average Forward Current (1) Peak Surge Forward Current
Thermal Resistance - Junction to Case Note: (1) Derate @ 150mA/°C above TC = 100°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Breakdown Voltage (2) IR = 500µAdc Forward Voltage (2) IF = 10A (pk) IF = 20A (pk) Reverse Leakage Current (2) VR = 240V VR = 320V VR = 400V Reverse Leakage Current (2) VR = 240V, TC = +100°C VR = 320V, TC = +100°C VR = 400V, TC = +100°C Reverse Recovery Time IF = 0.5A, IR = 1A, IRR = 0.25A Junction Capacitance VR = 10Vdc, f = 1.0MHz, Vsig = 50mV (p-p) (max) Note: (2) Pulse Test; 300µS, duty cycle ≤ 2% T4-LDS-0020 Rev. 1 (072046) Page 1 of 1 1N6672, R 1N6673, R 1N6674, R Symbol VBR Min. 300 400 500 1.35 1.55 Max. Unit Vdc
•1
•2
•3
1N6672, 1N6673, 1N6674 Vdc
VF1 VF2
1N6672, R 1N6673, R 1N6674, R
IR1
50
µAdc
•1
IR2 5 mAdc
•2
•3
1N6672, R 1N6673, R 1N6674, R
1N6672R, 1N6673R, 1N6674R
trr
35
nS
CJ
150
pF
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