1N6775

TECHNICAL DATA ULTRAFAST SILICON POWER RECTIFIER Qualified per MIL-PRF-19500/646 Devices 1N6774 1N6775 1N6776 1N6777 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Working Peak Reverse Voltage Forward Current TC = +100°C(1) Forward Current Surge Peak TP = 8.30C Operating & Storage Junction Temperature Symbol 1N6774 1N6775 1N6776 1N6777 Unit VRWM IF IFSM Top, Tstg Symbol RθJC RθJA 50 100 150 15 180 -65 to +150 Max. 2.0 40 200 Vdc Adc Apk 0 C Unit C/W C/W *See appendix A for package THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1) Derate at 300 mA/0C above TC = +1000C 0 0 TO-257* (2-PIN-ISOLATED) ELECTRICAL CHARACTERISTICS (TC = +250C Unless Otherwise Noted) outline Characteristics Forward Voltage IF = 8.0 Adc, pulsed IF = 15 Adc, pulsed Reverse Current Leakage VR = 0.8 of VRWM Thermal Impedance t t IM =15 mAdc; IH = 9.9 Adc; H = 200 ms; MD = 35 µs; VH = 1 Vdc Breakdown Voltage IR = 10 µAdc 1N6774 1N6775 1N6776 1N6777 Junction Capacitance VR = 5.0 Vdc, f = 1.0 MHz Reverse Recovery Time IF = 1.0 Adc; di/dt = 50 A/µs Symbol VF IR ZØJX Min. Max. 1.00 1.15 10 Unit Vdc µAdc 0 C/W 1.8 50 100 150 200 300 35 VBR Vdc CJ trr pF ηs 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 1