2731-20

2731-20R1 2731-20 20Watts, 36 Volts, 100us, 10% Radar 2700-3100 MHz GENERAL DESCRIPTION The 2731-20is an internally matched, COMMON BASE bipolar transistor capable of providing 20Watts of pulsed RF output power at 100 pulse width, 10% duty factor across the 2700 to 3100 MHz band. The transistor prematch and test fixture has been optimized through the use of 10 Ohm TRL Analysis. This ceramic sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55KCR-1 Common Base ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 70 Device Dissipation @ 25°C1 Maximum Voltage and Current 65 Collector to Base Voltage (BVces) Emitter to Base Voltage (BVebo) 3.0 1.85 Peak Collector Current (Ic) Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 W V V A °C °C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL Pout Pg ηc Rl VSWR-S VSWR-T CHARACTERISTICS Power Output Power Gain Collector Efficiency Return Loss Load Mismatch Stability Load Mismatch Tolerance TEST CONDITIONS F=2700-3100 MHz Pulse Width = 100s Duty Factor = 10 % Power Input = 3W Vcc = +36V F = 2700, 2900, 3100 MHz MIN 20 8.2 45 -7 1.5:1 3:1 TYP MAX UNITS W dB % dB FUNCTIONAL CHARACTERISTICS @ 25°C Ices BVces θjc1 Collector to Emitter Leakage Collector to Emitter Breakdown Thermal Resistance Vce=40V Ic = 10 mA 1.5 65 2.5 mA V °C/W Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 2731-20R1 2731-20 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 2731-20R1 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.