2N2218A

580 Pleasant St. Watertown, MA 02472 PH: (617) 926-0404 FAX: (617) 924-1235 2N2218A Features • • • • • Meets MIL 19500 /251 Collector - Base Voltage 75V Collector - Current 800 mA Medium Current, Bipolar Transistor Available in TO-5 SWITCHING TRANSISTOR JAN, JANTX, JANTXV SMALL SIGNAL BIPOLAR NPN SILICON TO-39 Maximum Ratings RATING Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25 ° C Derate above 25 ° C Total Device Dissipation @ TC = 25 ° C Derate above 25 ° C Operating Junction&Storage Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD T J, Tstg VALUE 50 75 6 800 0.8 4.6 3.0 17.0 - 55 to +200 UNIT Vdc Vdc Vdc mAdc WATTS mW/° C WATTS mW/° C °C Thermal Characteristics CHARACTERISTIC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case SYMBOL Rθ JA Rθ JC MAX 217 59 UNIT ° C/W ° C/W MSCO933A 10-14-98 DSW2N2218A (34724) 2N2218A Electrical Characteristics (TA = 25°C unless otherwise noted) OFF CHARACTERISTIC Collector - Emitter Breakdown Voltage (1) ( IC = 10 mA dc, IB = 0 ) Collector - Base Breakdown Voltage ( IC = 10 µ Adc, IE = 0 ) Emitter - Base Breakdown Voltage ( IE = 10 µ Adc, IC = 0 ) Collector - Emitter Cutoff Current ( VCE = 50 Vdc ) Collector - Base Cutoff Current ( VCB = 60 Vdc, IE = 0 ) ( VCB = 60 Vdc, IE = 0, T A = 150 ° C ) Emitter - Base Cutoff Current ( VEB = 4 Vdc ) ( VEB = 6 Vdc ) ON CHARACTERISTIC DC Current Gain ( IC = 0.1 mA dc, VCE = 10 Vdc ) (1) ( IC = 1 mA dc, VCE = 10 Vdc ) (1) ( IC = 10 mA dc, VCE = 10 Vdc ) (1) ( IC = 150 mA dc, VCE = 10 Vdc ) (1) ( IC = 500 mA dc, VCE = 10 Vdc ) (1) ( IC = 10 mA dc, VCE = 10 Vdc, TJ = - 55° C ) (1) Collector - Emitter Saturation Voltage ( IC = 150 mAdc, IB = 15 mAdc ) (1) ( IC = 500 mAdc, IB = 50 mAdc ) (1) Base - Emitter Saturation Voltage ( IC = 150 mAdc, IB = 15 mAdc ) (1) ( IC = 500 mAdc, IB = 50 mAdc ) (1) SYMBOL V(BR)CEO V(BR)CBO 75 V(BR)EBO 6 ICES 10 ICBO 10 10 IEBO 10 10 SYMBOL hFE MIN 30 35 40 40 20 35 VCE(sat) 0.3 1.0 VBE(sat) 0.6 1.2 2.0 Vdc Vdc Vdc Vdc MAX nAdc µ Adc UNIT nAdc µ Adc nAdc Vdc Vdc MIN 50 MAX UNIT Vdc 150 120 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤.2% MSCO933A 10-14-98 DSW2N2218A (34724) 2N2218A Electrical Characteristics (TA = 25°C unless otherwise noted) SMALL - SIGNAL CHARACTERISTICS Output Capacitance ( VCB = 10 Vdc, IE = 0, 100kHz ≤ f ≤ 1 MHz ) Input Capacitance ( VEB = 0.5 Vdc, IC = 0, 100kHz ≤ f ≤ 1 MHz ) SWITCHING CHARACTERISTICS Turn - On Time ( VCC = 30 Vdc, IC = 150 mAdc, IB1 =15 mAdc) ( See FIGURE 1 ) Turn - Off Time ( VCC = 30 Vdc, IC = 150 mAdc, IB1 = - IB2 = 15 mAdc) ( See FIGURE 2 ) SYMBOL Cobo Cibo 25 SYMBOL ton MIN MAX pF UNIT MIN MAX 8.0 UNIT pF 35 toff 300 ns ns Small - Signal AC Characteristics (TA = 25°C) LOW FREQUENCY Common - Emitter Forward Current Transfer Ratio ( IC = 1 mA, VCE = 10 V, f = 1kHz ) HIGH FREQUENCY Common - Emitter Forward Current Transfer Ratio ( IC = 20 mA, VCE = 20 V, f = 100 MHz ) SYMBOL hfe MIN 35 |hfe| 2.5 *1 MAX UNIT 12 Spice Model (based upon typical device characteristics) XTI = 3.0 IKF = 1.255 IKR = 0.8992 CJE = 29.6p XTF = 0.0 EG = 1.11 NK = 0.9394 RC = 0.0 MJE = 0.3333 VTF = 10.0 ) Q2N2218A NPN ( IS = 21.2f + NE = 2.05 + NC = 1.605 + FC = 0.5 + ITF = 1.0 VAF = 103.8 XTB = 1.5 CJC = 19.4p VJE = 0.75 BF = 90.7 BR = 1.031 MJC = 0.3333 TR = 275.0 n ISE = 3.34p ISC = 3.299p VJC = 0.75 TF= 564.5p *1. Microsemi Corp. claims no responsibility for misapplication of Spice Model information. Spice modeling should be used as a precursor guide to in-circuit performance. Actual performance is the responsibility of the user/designer. MSCO933A 10-14-98 DSW2N2218A (34724) 2N2218A TO-39 CASE OUTLINE DIE CHARACTERISTICS Back is Collector Chip Thickness is: 10 MILS TYP Metalization is: Top = Al, Back = Au DIE OUTLINE MSCO933A 10-14-98 DSW2N2218A (34724) 2N2218A FIGURE 1 Saturated Turn-on Time Test Circuit t FIGURE 2 Saturated Turn-off Time Test Circuit MSCO933A 10-14-98 DSW2N2218A (34724) 2N2218A DC CURRENT GAIN VCE = 10 V 125 125 typ @ 25C 100 100 hFE CURRENT GAIN 75 75 50 typ @ -55C 50 25 25 0 .0001 .001 .01 IC COLLECTOR CURRENT (A) .1 1 0 FIGURE 3 VCE, COLLECTOR-EMITTER (V) COLLECTOR SATURATION vs BASE CURRENT TJ = 25 C 1.0 1.0 0.8 IC = 500 mA 0.6 IC = 150 mA 0.4 0.8 0.6 0.4 0.2 0.2 0.0 .0001 .001 .01 IB, BASE CURRENT (A) .1 1 0.0 FIGURE 4 MSCO933A 10-14-98 DSW2N2218A (34724) 2N2218A VBE, BASE-EMITTER VOLTAGE (V) BASE SATURATION vs BASE CURRENT TJ = 25 C 1.25 1.25 IC = 500 ma 1.00 IC = 150 ma 1.00 0.75 0.75 0.50 .001 0.50 .01 .1 1 IB, BASE CURRENT (A) FIGURE 5 JUNCTION CAPACITANCE TJ = 25 C 100 kHz < f < 1 MHz JUNCTION CAPACITANCE (pF) 30 30 25 CIBO 20 COBO 15 25 20 15 10 10 5 5 0 .01 .1 1 10 REVERSE JUNCTION VOLTAGE (V) 0 100 FIGURE 6 MSCO933A 10-14-98 DSW2N2218A (34724) 2N2218A SWITCHING TURN - 0N TIME TJ = 25 C IC/IB = 10 100 100 ton TIME (ns) max. min. 10 10 100 COLLECTOR CURRENT (mA) 10 1000 FIGURE 7 SWITCHING TURN - OFF TIME TJ = 25 C IC/IB = 10 1000 1000 (ns) max. toff TIME min. 100 10 100 COLLECTOR CURRENT (mA) 100 500 FIGURE 8 MSCO933A 10-14-98 DSW2N2218A (34724) 2N2218A NORMALIZED GAIN VS FREQUENCY TJ = 25C IC = 20 mA VCE = 20 V 1 1 NORMALIZED GAIN .1 .1 .01 1 10 100 FREQUENCY MHz .01 1000 FIGURE 9 MSCO933A 10-14-98 DSW2N2218A (34724)