2N2369AU

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/317 DEVICES LEVELS 2N2369A 2N2369AU 2N2369AUA 2N2369AUB 2N2369AUBC * 2N4449 JAN JANTX JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Total Power Dissipation @ TA = +25°C 2N2369A; 2N4449 UA, UB, UBC U 2N2369A / U / UA 2N4449 / UB / UBC 2N2369A / U / UA 2N4449 / UB / UBC Symbol VCEO VEBO VCBO ICES PT Top, Tstg Value 15 20 4.5 6.0 40 40 0.36 (1) 0.36 (1, 5) 0.50 (4) -65 to +200 Unit Vdc Vdc Vdc Vdc W TO-18 (TO-206AA) 2N2369A TO-46 (TO-206AB) Operating & Storage Junction Temperature Range °C 2N4449 THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Ambient-to-Case 2N2369A; 2N4449 UA, UB, UBC U Note: 1. 2. 3. 4. 5. Symbol RθJA Value 400 400 (5) 350 Unit °C/W SURFACE MOUNT UA Derate linearly 2.06 mW°/C above TA = +25°C. Derate linearly 4.76 mW°/C above TC = +95°C. Derate linearly 3.08 mW°/C above TC = +70°C. Derate linearly 3.44 mW°/C above TA = +54.5°C. Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads. SURFACE MOUNT UB & UBC (UBC = Ceramic Lid Version) ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Base Cutoff Current VCE = 20Vdc T4-LDS-0057 Rev. 2 (081394) Symbol Min. Max. Unit V(BR)CEO ICES 15 0.4 Vdc μAdc SURFACE MOUNT U (Dual Transistor) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/317 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERISTICS Emitter-Base Breakdown Voltage VEB = 4.5Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc Collector- Base Breakdown Voltage VCB = 40Vdc Collector-Base Cutoff Current VCB = 32Vdc ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 10mAdc, VCE = 0.35Vdc IC = 30mAdc, VCE = 0.4Vdc IC = 10mAdc, VCE = 1.0Vdc IC = 100mAdc, VCE = 1.0Vdc Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 30mAdc, IB = 3.0mAdc IC = 100mAdc, IB = 10mAdc Base-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 30mAdc, IB = 3.0mAdc IC = 100mAdc, IB = 10mAdc Symbol Min. Max. Unit IEBO 10 0.25 10 0.2 μAdc ICBO μAdc hFE 40 30 40 20 120 120 120 120 0.20 0.25 0.45 VCE(sat) Vdc VBE(sat) 0.70 0.80 0.85 0.90 1.20 Vdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Forward Current Transfer Ratio IC = 10mAdc, VCE = 10Vdc, f = 100MHz Output Capacitance VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Symbol |hfe| Cobo Cibo Min. 5.0 Max. 10 4.0 5.0 pF pF Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time IC = 10mAdc; IB1 = 3.0mAdc, IB2 = -1.5mAdc Turn-Off Time IC = 10mAdc; IB1 = 3.0mAdc, IB2 = -1.5mAdc Charge Storage Time IC = 10mAdc; IB1 = 10mAdc, IB2 = 10mAdc (1) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%. T4-LDS-0057 Rev. 2 (081394) Page 2 of 2 Symbol ton toff tS Min. Max. 12 18 13 Unit ηs ηs ηs