2N2484

TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 Devices 2N2484 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC 2N2484 60 60 6.0 50 360 1.2 -65 to +200 Max. 146 Unit Vdc Vdc Vdc mAdc mW W 0 C Unit C/W THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.06 mW/0C above TA = +250C 2) Derate linearly 6.85 mW/0C above TC = +250C 0 TO- 18* (TO-206AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICES ICBO ICEO IEBO Min. 60 5.0 5.0 10 2.0 2.0 10 Max. Unit Vdc ηAdc ηAdc µAdc ηAdc ηAdc µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Emitter Cutoff Current VCE = 45 Vdc Collector-Base Cutoff Current VCB = 45 Vdc VCB = 60 Vdc Collector-Emitter Cutoff Current VCE = 5.0 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc VEB = 6.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N2484 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 1.0 µAdc, VCE = 5.0 Vdc IC = 10 µAdc, VCE = 5.0 Vdc IC = 100 µAdc, VCE = 5.0 Vdc IC = 500 µAdc, VCE = 5.0 Vdc IC = 1.0 mAdc, VCE = 5.0 Vdc IC = 10 mAdc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 1.0 mAdc, IB = 100 µAdc Base-Emitter Voltage VCE = 5.0 Vdc, IC = 100 µAdc 45 200 225 250 250 225 hFE 500 675 800 800 800 0.3 Vdc Vdc VCE(sat) VBE 0.5 0.7 DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 50 µAdc, VCE = 5.0 Vdc, f = 5.0 MHz IC = 500 µAdc, VCE = 5.0 Vdc, f = 30 MHz Open Circuit Output Admittance IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Open Circuit Reverse-Voltage Transfer Ratio IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Input Impedance IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Output Capacitance VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. hfe hoe hre hie hfe Cobo Cibo 3.0 2.0 7.0 40 8.0x10-4 µmhos 3.5 250 24 900 5.0 6.0 kΩ pF pF 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2