2N2609

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/296 DEVICES LEVELS 2N2609 MQ = JAN Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Gate-Source Voltage Power Dissipation (1) Symbol VGSS Value 30 300 -65 to + 200 Unit V mW °C TA = +25°C PD Top, Tstg Operating Junction & Storage Temperature Range (1) Derate linearly 1.71 mW/°C for TA > +25°C. ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Gate-Source Breakdown Voltage VDS = 0, IG = 1.0μA dc Gate Reverse Current VDS = 0, VGS = 30V dc VDS = 0, VGS = 15V dc Drain Current VGS = 0V dc, VDS = 5.0V dc Gate-Source Cutoff Voltage VDS = 5.0V, ID = 1.0μA dc Magnitude of Small-Signal, Common-Source Short-Circuit Forward Transfer Admittance VGS = 0, VDS = 5.0V dc, f = 1.0kHz Small-Signal, Common-Source Short-Circuit Input Capacitance VGS = 0, VDS = 5.0V dc, f = 1.0MHz Common-Source Spot Noise Figure VGS = 0, VDS = 5.0V dc, f = 1.0kHz BW = 16%, RG = 1.0 megohms egen = 1.82mV dc, RL = 220Ω Symbol V(BR)GSS Min. 30 Max. Unit Vdc TO-18 (TO-206AA) IGSS 30 22.5 ηA IDSS -2.0 -10.0 mA VGS(off) 0.75 6.0 Vdc |Yfs2| 2,000 6,250 μmho Ciss 10 pF NF 3.0 dB T4-LDS-0003 Rev. 1 (063374) Page 1 of 1