2N2920L

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /355 DEVICES LEVELS 2N2919 2N2920 2N2919L 2N2920L 2N2919U 2N2920U JAN JANTX JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC One Section 1 Total Power Dissipation @ TA = +25°C PT TJ, Tstg 200 Value 60 70 6.0 30 Both Sections 2 350 mW °C TO-78 Unit Vdc Vdc Vdc mAdc Operating & Storage Junction Temperature Range -65 to +200 NOTES: 1. Derate linearly 1.143mW/°C for TA > +25°C (one section) 2. Derate linearly 2.000mW/°C for TA > +25°C (both sections) ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc; Pulsed Collector-Base Cutoff Current VCB = 45Vdc VCB = 70Vdc Emitter-Base Cutoff Current VEB = 5.0Vdc VEB = 6.0Vdc Symbol Min. Max. Unit V(BR)CEO 60 Vdc U - Package ηAdc μAdc ηAdc μAdc ICBO 2.0 10 2.0 10 IEBO T4-LDS-0202 Rev. 1 (110638) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (con’t) Parameters / Test Conditions ON CHARACTERTICS Forward-Current Transfer Ratio IC = 10μAdc, VCE = 5.0Vdc IC = 100μAdc, VCE = 5.0Vdc IC = 1.0mAdc, VCE = 5.0Vdc IC = 10μAdc, VCE = 5.0Vdc IC = 100μAdc, VCE = 5.0Vdc IC = 1.0mAdc, VCE = 5.0Vdc Collector-Emitter Saturation Voltage IC = 1.0mAdc, IB = 100μAdc Base-Emitter Saturation Voltage IC = 1.0mAdc, IB = 100μAdc Symbol Min. Max. Unit 2N2919, 2N2919L , 2N2919U hFE 60 100 150 175 235 300 240 325 600 600 800 1000 2N2920, 2N2920L, 2N2920U hFE VCE(sat) 0.3 Vdc VBE(sat) 0.5 1.0 Vdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Forward Current Transfer Ratio, Magnitude IC = 0.5mAdc, VCE = 5.0Vdc, f = 20MHz Small-Signal Short Circuit Input Impedance IC = 1.0mAdc, VCE = 5Vdc, f = 1.0kHz Small-Signal Short Circuit Output Admittance IC = 1.0mAdc, VCE = 5Vdc, f = 1.0kHz Output Capacitance VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Noise Figure IC = 10μAdc, VCE = 5Vdc, f = 100Hz, RG = 10kΩ IC = 10μAdc, VCE = 5Vdc, f = 1.0kHz, RG = 10kΩ IC = 10μAdc, VCE = 5Vdc, f = 10kHz, RG = 10kΩ F1 F2 F3 5.0 3.0 3.0 dB Symbol |hfe| Min. 3.0 Max. 20 Unit hje 3.0 30 kΩ hoe Cobo 60 5.0 μmhos pF T4-LDS-0202 Rev. 1 (110638) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Symbol CD CD1 CH HT LC LC1 LD LL LU L1 L2 P Q TL TW r α DIMENSIONS Inches Millimeters Min Max Min Max .335 .370 8.51 9.40 .305 .335 7.75 8.51 .140 .260 3.56 6.60 .009 .041 0.23 1.04 .140 .160 3.56 4.06 .200 TP 5.08 TP .016 .021 .041 0.53 See notes 10, 11 and 12 .016 .019 .041 0.48 .050 1.27 .250 6.35 .100 2.54 .050 1.27 .029 .045 0.74 1.14 .028 .034 0.71 0.86 .010 0.25 45°TP 45°TP Notes 9 10 10 10 10 8 7 5, 6 4, 5 9 NOTES: 1 Dimensions are in inches. 2 Millimeters are given for general information only. 3 Tab Shown omitted. 4 Lead number 4 and 8 omitted on this variation. 5 Beyond r maximum, TW shall be held to a minimum length of .21 inch (5.33 mm) 6 TL shall be measured from maximum CD. 7 Details of outline in this zone are optional. 8 CD1 shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 9 Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedures described on gauge drawing GS-1. 10 LU applies between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 11 For transistor types 2N2919 and 2N2920, LL is .500 inch (12.70 mm) minimum and .750 inch (19.05 mm) maximum. 12 For transistor type 2N2919L and 2N2920L, LL is 1.500 inches (38.10 mm) minimum and 1.750 inches (44.45 mm) maximum. 13 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions 2N2919, 2N2919L, 2N2920, and 2N2920L (TO-78). T4-LDS-0202 Rev. 1 (110638) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Symbol BL BL2 BW BW2 CH LH LL1 LL2 LS1 LS2 LW Dimensions Inches Millimeters Min Max Min Max .240 .250 6.10 6.35 .250 6.35 .165 .175 4.19 4.44 .175 4.44 .044 .080 1.12 2.03 .026 .039 0.66 0.99 .060 .070 1.52 1.78 .082 .098 2.08 2.49 .095 .105 2.41 2.67 .045 .055 1.14 1.39 .022 .028 0.56 0.71 Pin no. 1 2 3 4 5 6 Transistor Collector no. 1 Base no. 1 Base no. 2 Collector no. 2 Emitter no. 2 Emitter no. 1 NOTES: 1 Dimensions are in inches. 2 Millimeters are given for general information only. 3 In accordance with AMSE Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions (2N2919U and 2N2920U) Surface mount. T4-LDS-0202 Rev. 1 (110638) Page 4 of 4