2N2944AUB

2N2944AUB – 2N2946AUB PNP Silicon Small Signal Transistor Available on commercial versions Qualified per MIL-PRF-19500/382 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 2N2944AUB through 2N2946AUB PNP silicon transistor device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Surface mount equivalent of JEDEC registered 2N2944A thru 2N2946A series. • Low-profile ceramic surface mount package. • JAN, JANTX, and JANTXV qualification per MIL-PRF-19500/382 available. • RoHS compliant versions available (commercial grade only). UB Package APPLICATIONS / BENEFITS • • Small lightweight package. ESD to Class 3 per MIL-STD-750, method 1020. Also available in: TO-46 (TO-206AB) (axial leaded) 2N2944A – 2N2946A o MAXIMUM RATINGS @ +25 C unless otherwise noted. Parameters/Test Conditions Junction and Storage Temperature (2) Thermal Resistance Junction-to-Ambient Thermal Resistance surface mount Junction to Solder Point Collector Current (dc) Emitter to Base voltage (static), 2N2944AUB collector open 2N2945AUB 2N2946AUB Collector to Base voltage (static), 2N2944AUB emitter open 2N2945AUB 2N2946AUB Collector to Emitter voltage (static), 2N2944AUB base open 2N2945AUB 2N2946AUB Emitter to Collector voltage 2N2944AUB 2N2945AUB 2N2946AUB o Total Power Dissipation, all terminals @ T A = +25 C (1) o Total Power Dissipation, all terminals @ T SP = +25 C Symbol Value T J and T STG R ӨJA R ӨJSP -65 to +200 435 90 IC V EBO PT -100 -15 -25 -40 -15 -25 -40 -10 -20 -35 -10 -20 -35 400 mW PT 800 mW V CBO V CEO V ECO Unit o C C/W o C/W o mA V V V V Notes: 1. Derate linearly 2.30 mW /oC above T A = +25oC. 2. T A = +55°C for UB on printed circuit board (PCB), PCB = FR4 .0625 inch (1.59 mm) 1 - layer 1 Oz Cu, horizontal, still air, pads (UB) = .034 inch (0.86 mm) x .048 inch (1.22 mm), R θJA with a defined thermal resistance condition included is measured at P T = 400 mW . T4-LDS-0236-1, Rev. 1 (111960) ©2011 Microsemi Corporation MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 5 2N2944AUB – 2N2946AUB MECHANICAL and PACKAGING • • • • • • CASE: Ceramic. TERMINALS: Gold plating over nickel under-plate. RoHS compliant matte/tin available on commercial grade only. MARKING: Part number, date code, manufacturer’s ID. TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities. WEIGHT: < 0.04 Grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N2944A UB (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS Compliant (available on commercial grade only) Blank = non-RoHS Compliant Surface Mount package JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol IB IE V CB V EB V (BR) Base current (dc). Emitter current (dc). Collector to base voltage (dc). Emitter to base voltage (dc). Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. T4-LDS-0236-1, Rev. 1 (111960) ©2011 Microsemi Corporation Page 2 of 5 2N2944AUB – 2N2946AUB o ELECTRICAL CHARACTERISTICS @ 25 C unless otherwise noted. Characteristic Symbol Min. Max. Unit OFF CHARACTERISTICS: Collector-Emitter Breakdown Voltage IC = -10 µA 2N2944AUB 2N2945AUB 2N2946AUB V(BR)CEO -10 -20 -35 V 2N2944AUB 2N2945AUB 2N2946AUB V(BR)ECO -10 -20 -35 V Collector-Base Cutoff Current VCB = -15 V VCB = -25 V VCB = -40 V 2N2944AUB 2N2945AUB 2N2946AUB I CBO 10 10 10 µA Emitter-Base Cutoff Current VEB = -12 V VEB = -20 V VEB = -32 V 2N2944AUB 2N2945AUB 2N2946AUB I EBO Emitter-Collector Breakdown Voltage IE = -10 µA, I B = 0 -0.1 -0.2 -0.5 ηA VEC(ofs) -0.3 -0.5 -0.8 -0.6 -1.0 -2.0 -1.0 -1.6 -2.5 mV 2N2944AUB 2N2945AUB 2N2946AUB 2N2944AUB 2N2945AUB 2N2946AUB rec(on) 10 12 14 4.0 6.0 8.0 2N2944AUB 2N2945AUB 2N2946AUB |hfe| ON CHARACTERISTICS: (1) Forward-Current Transfer Ratio IC = -1.0 mA, VCE = -0.5 V 2N2944AUB 2N2945AUB 2N2946AUB Forward-Current Transfer Ratio (inverted connection) 2N2944AUB IE = -200 µA, VEC = -0.5 V 2N2945AUB 2N2946AUB Emitter-Collector Offset Voltage IB = -200 µA, IE = 0 2N2944AUB 2N2945AUB 2N2946AUB 2N2944AUB IB = -1.0 mA, IE = 0 2N2945AUB 2N2946AUB 2N2944AUB IB = -2.0 mA, IE = 0 2N2945AUB 2N2946AUB hFE 100 70 50 hFE(inv) 50 30 20 DYNAMIC CHARACTERISTICS: Emitter-Collector On-State Resistance IB = -100 µA, IE = 0, Ie = 100 µA ac (rms) f = 1.0 kHz IB = -1.0 mA, IE = 0, Ie = 100 µA ac (rms) f =1.0 kHz Magnitude of Small-Signal Forward Current Transfer Ratio IC = -1.0 mA, VCE = -6.0V, f = 1.0 MHz Output Capacitance VCB = -6.0 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = -6.0 V, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz 15 10 5.0 Ω 55 55 55 Cobo 10 pF Cibo 6.0 pF (1) Pulse Test: Pulse Width = 300 s, duty cycle 2.0%. T4-LDS-0236-1, Rev. 1 (111960) ©2011 Microsemi Corporation Page 3 of 5 2N2944AUB – 2N2946AUB Maximum DC Operation Rating (mW ) GRAPHS o T A ( C) Ambient Temperature Maximum DC Operation Rating (mW ) FIGURE 1 – Temperature-Power Derating Curve (R ӨJA ) o T SP ( C) Solder Pad Temperature FIGURE 2 – Temperature-Power Derating Curve (R ӨJSP ) T4-LDS-0236-1, Rev. 1 (111960) ©2011 Microsemi Corporation Page 4 of 5 2N2944AUB – 2N2946AUB PACKAGE DIMENSIONS Symbol BH BL BW CL CW LL1 LL2 inch Min .046 .115 .085 .022 .017 Dimensions millimeters Max Min Max .056 1.17 1.42 .128 2.92 3.25 .108 2.16 2.74 .128 3.25 .108 2.74 .038 0.56 0.97 .035 0.43 0.89 Note Symbol LS1 LS2 LW r r1 r2 inch Min .035 .071 0.16 Dimensions millimeters Max Min Max .039 0.89 0.99 .079 1.80 2.01 0.24 0.41 0.61 .008 0.20 .012 0.31 .022 .056 Note NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0236-1, Rev. 1 (111960) ©2011 Microsemi Corporation Page 5 of 5