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2N3250A

2N3250A

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    2N3250A - PNP SILICON SWITCHING TRANSISTOR - Microsemi Corporation

  • 数据手册
  • 价格&库存
2N3250A 数据手册
TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/323 Devices 2N3250A 2N3251A Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PT TJ, Tstg Symbol (1)(2) RθJA Value 60 60 5.0 200 0.36 1.2 -65 to +175 Max. 417 Units Vdc Vdc Vdc mAdc W W 0 C Unit C/W THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Ambient 1) Derate linearly 2.4 W/0C for TA > +250C 2) Derate linearly 8.0 W/0C for TC > +250C 0 TO-39* (TO-205AD) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Emitter Cutoff Voltage VBE = 3.0 Vdc, VCE = 40 Vdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 40 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Voltage VBE = 3.0 Vdc, VCE = 40 Vdc V(BR)CEO ICEX ICBO IEBO ICEX 60 20 10 20 10 50 Vdc ηAdc µAdc ηAdc µAdc ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3250A, 2N3251A JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 1.0 Vdc IC = 1.0 mAdc, VCE = 1.0 Vdc IC = 10 mAdc, VCE = 1.0 Vdc IC = 50 mAdc, VCE = 1.0 Vdc Collector-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 50 mAdc, IB = 5.0 mAdc Base-Emitter Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 50 mAdc, IB = 5.0 mAdc 2N3250A 2N3251A 2N3250A 2N3251A 2N3250A 2N3251A 2N3250A 2N3251A 40 80 45 90 50 100 15 30 hFE 150 300 VCE(sat) 0.25 0.50 0.60 0.90 1.20 Vdc Vdc VBE(sat) DYNAMIC CHARACTERISTICS Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2N3250A 2N3251A Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz 2N3250A 2N3251A Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 1.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe 50 100 200 400 hfe 2.5 3.0 Cobo Cibo 9.0 9.0 6.0 8.0 pF pF SWITCHING CHARACTERISTICS Turn-On Time VCC = 3.0 Vdc; IC = 10 mAdc; IB1= 1.0 mAdc Turn-Off Time VCC = 3.0 Vdc; IC = 10 mAdc; IB1 = IB2 = 1.0 mAdc 2N3250A 2N3251A (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. t on 70 ηs t off 250 300 ηs 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2
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