2N3251A

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/323 DEVICES LEVELS 2N3250A 2N3250AUB 2N3251A 2N3251AUB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C @ TC = +25°C (1) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Case Note: 1/ Consult 19500/323 for thermal curves ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Emitter Cutoff Voltage VBE = 3.0Vdc, VCE = 40Vdc VBE = 3.0Vdc, VCE = 40Vdc Collector-Base Cutoff Current VCB = 60Vdc VCB = 40Vdc Emitter-Base Cutoff Current VEB = 5.0Vdc Collector-Emitter Cutoff Voltage VBE = 3.0Vdc, VCE = 40Vdc Symbol V(BR)CEO ICEX Min. 60 20 20 10 20 10 50 Max. Unit Vdc ηAdc μAdc μAdc ηAdc μAdc ηAdc Symbol RθJC (1) (1) Symbol VCEO VCBO VEBO IC PT TJ, Tstg Value 60 60 5.0 200 0.36 1.2 -65 to +200 Unit Vdc Vdc Vdc mAdc W °C TO-39 (TO-205AD) Max. 150 Unit °C/W TA = 150°C UB Package ICBO IEBO IBEX T4-LDS-0093 Rev. 2 (101243) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERTICS (2) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 1.0Vdc IC = 1.0mAdc, VCE = 1.0Vdc IC = 10mAdc, VCE = 1.0Vdc IC = 50mAdc, VCE = 1.0Vdc IC = 1.0mAdc, VCE = 1.0Vdc TA = -55°C Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 50mAdc, IB = 5.0mAdc Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mAdc IC = 50mA, IB = 5.0mAdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N3250A, AUB 2N3251A, AUB Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10mAdc, VCE = 20Vdc, f = 100kHz 2N3250A, AUB 2N3251A, AUB Output Capacitance VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz Input Capacitance VEB = 1.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time VCC = 3.0Vdc; IC = 10mAdc; IB1 = 1.0mAdc Turn-Off Time VCC = 3.0Vdc; IC = 10mAdc; IB1 = IB2 = 1.0mAdc 2N3250A, AUB 2N3251A, AUB Symbol ton toff Min. Max. 70 250 300 Unit ηs ηs Symbol hfe Min. 50 100 Max. 200 400 Unit Symbol Min. Max. Unit 2N3250A, AUB 2N3251A, AUB 2N3250A, AUB 2N3251A, AUB 2N3250A, AUB 2N3251A, AUB 2N3250A, AUB 2N3251A, AUB 2N3250A, AUB 2N3251A, AUB VCE(sat) hFE 40 80 45 90 50 100 15 30 20 40 0.25 0.50 0.60 0.90 1.20 Vdc 150 300 VBE(sat) Vdc |hfe| 2.5 3.0 9.0 9.0 6.0 8.0 pF pF Cobo Cibo (2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0% T4-LDS-0093 Rev. 2 (101243) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.74 .100TP 2.54 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .040 1.02 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .010 0.25 45° TP 45° TP Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Notes 6 7, 8 7, 8 7, 8 7, 8 7, 8 5 3, 4 3 10 6 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure shown in figure 2. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensions (similar to TO-18). T4-LDS-0093 Rev. 2 (101243) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Ltr. BH BL BW CL CW LL1 LL2 Dimensions Inches Millimeters Min Max Min Max .046 .056 1.17 1.42 .115 .128 2.92 3.25 .085 .108 2.16 2.74 .128 3.25 .108 2.74 .022 .038 0.56 0.96 .017 .035 0.43 0.89 Note Ltr. LS1 LS2 LW r r1 r2 Dimensions Inches Millimeters Min Max Min Max .035 .039 0.89 0.99 0.71 .079 1.80 2.01 .016 .024 0.41 0.61 .008 0.20 .012 0.31 .022 0.56 Note NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions, surface mount (UB version). T4-LDS-0093 Rev. 2 (101243) Page 4 of 4