2N3418

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 APPLICATIONS: • • • 2N3418 Power Supply Pulse Amplifier High Frequency Power Switching FEATURES: • • • • • Meets MIL-S-19500/393 Collector-Base Voltage: up to 85V Peak Collector Current: 5A High Power Dissipation in TO-5: 15W @ TC = 100° C Fast Switching 3 Amp, 85V, NPN Silicon Power Transistors JAN, JTX, JTXV, JANS DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-5 ABSOLUTE MAXIMUM RATINGS: SYMBOL VCBO* VCEO* VEBO* IC * IC * T STG* T J* PT * CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage D.C. Collector Current Peak Collector Current Storage Temperature Operating Junction Temperature Power Dissipation T C = 25° C Ambient T C = 100° C Case VALUE 85 60 8 3 5 -65 to 200 -65 to 200 1.0 15 UNITS Volts Volts Volts Amps Amps °C °C Watts Watts * Indicates MIL-S-19500/393 MSC0980A.DOC 12-02-98 2N3418 ELECTRICAL CHARACTERISTICS: CHARACTERISTICS: (25° Case Temperature Unless Otherwise Noted) SYMBOL BVCEO* ICEX* ICEO* IEBO* hFE* CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current D.C. Current Gain (Note 1) TEST CONDITIONS IC = 50 mAdc, Cond. D (Note 1) VEB = 0.5 Vdc, Cond. A, VCE = 80 Vdc VEB = 0.5 Vdc, Cond. A, TA = 150° C, VCE = 80 Vdc VCE = 45 Vdc, Cond. D VEB = 6 Vdc, Cond. D VEB = 8 Vdc, Cond. D IC = 100 mAdc, VCE = 2 Vdc IC = 1 Adc, VCE = 2 Vdc IC = 2 Adc, VCE = 2 Vdc IC = 5 Adc, VCE = 5 Vdc IC = 1 Adc, VCE = 2 Vdc, TA = - 55° C IC = 1 Adc, IB = 0.1 Adc IC = 2 Adc, IB = 0.2 Adc IC = 1 Adc, IB = 0.1 Adc IC = 2 Adc, IB = 0.2 Adc VCE = 5 Vdc, TC = 100° C VCE = 37 Vdc, TC = 100° C VCE = 60 Vdc, TC = 100° C IC = 3 Adc, L = 10 mH, Base Open IC = 3 Adc, L = 40 mH, VClamp = 85V IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz VCB = 10 Vdc, IE = 0, f = 1 MHz IC = 1 Adc, IB1 = - IB2 = 0.1 Adc IC = 1 Adc, IB1 = - IB2 = 0.1 Adc VALUE Min. Max. 60 ---------------20 20 15 10 10 ------0.6 0.7 3 0.4 185 45 ---0.3 50 5.0 0.5 10 ---60 ---------0.25 0.5 1.2 1.4 ------------- Units Vdc µ Adc µ Adc µ Adc µ Adc µ Adc ---------------Vdc Vdc Vdc Vdc Adc Adc mAdc mj VCE(sat)* Collector-Emitter Saturation Voltage (Note 1) Base-Emitter Saturation Voltage (Note 1) Forward Biased Second Breakdown Unclamped Reverse Biased Second Breakdown clamped Reverse Biased Second Breakdown Gain Bandwidth Product Output Capacitance Turn-on Time Turn-off Time VBE(sat)* IS/b* ES/b* ES/b* fT * COb* ton toff 180 26 ---------- ---160 150 0.3 1.2 mj MHz pf µs µs Note 1: Pulse Test: Pulse width = 300µ Sec., duty cycle ≤ 2%. * Indicates MIL-S-19500/393 MSC0980A.DOC 12-02-98 2N3418 PACKAGE MECHANICAL DATA: 1.500 [38.10] MIN .031 [.79] .240 [6.35] .260 [6.60] .010 [.25] .030 [.76] 45° .029 [.74] .045 [1.14] .200 [5.08] Ø.305 [7.75] Ø.335 [8.51] .100 [2.54] Ø.017 +.002 [.432] -.001 [+.051] [.025] .100 [2.54] Ø.335 [8.51] Ø.370 [9.40] NOTE: DIMENSIONS IN [ ] = MILLIMETERS MSC0980A.DOC 12-02-98