TECHNICAL DATA
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/348 Devices 2N3467 2N3467L 2N3468 2N3468L Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IC PT Top, Tstg
2N3467 2N3467L
40 40
2N3468 2N3468L
50 50
Unit
Vdc Vdc Vdc Adc W W 0 C
@ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 28.6 mW/0C for TC > +250C
5.0 1.0 1.0 5.0 -55 to +175
TO-39* (TO-205AD) 2N3467, 2N3468
TO-5* 2N3467L, 2N3468L
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current IC = 10 mAdc Emitter-Base Breakdown Current IE = 10 µAdc Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 30 Vdc Collector-Emitter Cutoff Current VEB = 3.0 Vdc, VCE = 30 2N3467, L 2N3468, L V(BR)CBO V(BR)EBO 2N3467, L 2N3468, L V(BR)CEO ICBO ICEX 40 50 5.0 40 50 100 100 Vdc Vdc Vdc ηAdc nAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 1 of 2
2N3467, L, 2N3468, L, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio IC =150 mAdc, VCE = 1.0 Vdc 2N3467, L 2N3468, L 2N3467, L 2N3468, L 2N3467, L 2N3468, L VCE(sat) hFE 40 25 40 25 40 25 0.35 0.6 1.2 1.0 1.2 1.6 Vdc 120 75
IC = 500 mAdc, VCE = 1.0 Vdc
IC = 1.0 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.0 Adc, IB = 100 mAdc Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.0 Adc, IB = 100 mAdc
VBE(sat)
0.8
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Extrapolated Unity Gain Frequency IC = 50 mAdc, VCE = 10 Vdc, f = 100NHz 2N3467, L 2N3468, L Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 25 pF
ft
175 150
500 500 100 10 30 60 30
MHz
Cibo
t
pF ns ns ns ns
SWITCHING CHARACTERISTICS Delay Time IC = 500 mAdc, IB1 = 50 mAdc, VEB = 2 Rise Time IC = 500 mAdc, IB1 = 50 mAdc, VEB = 2 Storage Time IC = 500 mAdc, IB1 = IB2 = 50 mAdc Fall Time IC = 100 mAdc, IB1 = IB2 = 50 mAdc
d r t s t f
t
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 2 of 2
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