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2N3498_1

2N3498_1

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    2N3498_1 - RADIATION HARDENED - Microsemi Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
2N3498_1 数据手册
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES LEVELS 2N3498 2N3498L 2N3499 2N3499L 2N3500 2N3500L 2N3501 2N3501L 2N3501UB JANSM – 3K Rads (Si) JANSD – 10K Rads (Si) JANSP – 30K Rads (Si) JANSL – 50K Rads (Si) JANSR – 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C @ TC = +25°C Symbol VCEO VCBO VEBO IC PT TJ, Tstg 2N3498* 2N3501* 2N3499* 2N3501* 100 100 6.0 500 1.0 5.0 -65 to +200 150 150 6.0 300 Unit Vdc Vdc Vdc mAdc W W °C Operating & Storage Junction Temperature Range TO-5* 2N3498L, 2N3499L 2N2500L, 2N3501L THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Max. 30 175 Unit °C/W °C/W * Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices. 1. Derate linearly 5.71 W/°C for TA > 25°C 2. Derate linearly 28.6 W/°C for TC > 25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc 2N3498, 2N3499 2N3500, 2N3501 Collector-Base Cutoff Current VCB = 50Vdc 2N3498, 2N3499 VCB = 75Vdc 2N3500, 2N3501 VCB = 100Vdc 2N3498, 2N3499 VCB = 150Vdc 2N3500, 2N3501 V(BR)CEO 100 150 50 50 10 10 Vdc ηAdc ηAdc μAdc μAdc TO-39* (TO-205AD) 2N3498, 2N3499 2N3500, 2N3501 Unit Symbol Min. Max. ICBO 3 PIN 2N3501UB T4-LDS-0056 Rev. 1 (080812) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERISTICS Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 6.0Vdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc 2N3498, 2N3500 2N3499, 2N3501 2N3498, 2N3500 2N3499, 2N3501 2N3498, 2N3500 2N3499, 2N3501 2N3498, 2N3500 2N3499, 2N3501 2N3500 2N3501 2N3498 2N3499 All Types 2N3498, 3N3499 2N3500, 2N3501 All Types 2N3498, 3N3499 2N3500, 2N3501 VCE(sat) 20 35 25 50 35 75 40 100 15 20 15 20 0.2 0.6 0.4 0.8 1.4 1.2 Vdc 120 300 IEBO Symbol Min. Max. Unit 25 10 ηAdc μAdc IC = 10mAdc, VCE = 10Vdc hFE IC = 150mAdc, VCE = 10Vdc IC = 300mAdc, VCE = 10Vdc IC = 500mAdc, VCE = 10Vdc Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 300mAdc, IB = 30mAdc IC = 150mAdc, IB = 15mAdc Base-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 300mAdc, IB = 30mAdc IC = 150mAdc, IB = 15mAdc VBE(sat) Vdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude, Forward Current Transfer Ratio IC = 20mAdc, VCE = 20Vdc, f = 100MHz Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz 2N3498, 2N3499 2N3500, 2N3501 Cobo 10 8.0 80 pF pF Symbol |hfe| Min. 1.5 Max. 8.0 Unit Cibo T4-LDS-0056 Rev. 1 (080812) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time VEB = 5Vdc; IC = 150mAdc; IB1 = 15mAdc Turn-Off Time IC = 150mAdc; IB1 = IB2 = 15mAdc SAFE OPERATING AREA DC Tests TC = +25°C, tr ≥ 10ηs; 1 Cycle, t = 1.0s Test 1 VCE = 10Vdc, IC = 500mAdc VCE = 16.67Vdc, IC = 300mAdc VCE = 10Vdc, IC = 113mAdc Test 2 VCE = 50Vdc, IC = 100mAdc VCE = 50Vdc, IC = 23mAdc Test 3 VCE = 80Vdc, IC = 40mAdc VCE = 80Vdc, IC = 14mAdc Clamped Switching TA = +25°C Test 1 IB = 85mAdc, IC = 500mAdc IB = 50mAdc, IC = 300mAdc 2N3498, 2N3499 2N3500, 2N3501 All Types 2N3501UB All Types 2N3501UB 2N3498, 2N3499 2N3500, 2N3501 2N3501UB Symbol ton Min. Max. 115 Unit ηs toff 1150 ηs (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% T4-LDS-0056 Rev. 1 (080812) Page 3 of 3
2N3498_1
### 物料型号 - 2N3498 - 2N3499 - 2N3500 - 2N3501 - 2N3501UB

### 器件简介 这是一份技术数据手册,描述了一种抗辐射NPN硅开关晶体管,符合MIL-PRF-19500/366标准。

### 引脚分配 - 2N3501UB为3引脚配置。

### 参数特性 #### 绝对最大额定值 - 集电极-发射极电压(VCEO):2N3498/2N3499为100V,2N3501为150V。 - 集电极-基极电压(VCBO):100V。 - 基极-发射极电压(VEBO):6.0V。 - 集电极电流(Ic):2N3498/2N3499为500mA,2N3501为300mA。 - 总功率耗散(PT):2N3498/2N3499为1.0W,2N3501为5.0W。

#### 热特性 - 热阻,结到壳体(Rac):最大30°C/W。 - 热阻,结到环境(RaJA):最大175°C/W。

#### 电气特性 - 关断特性包括集电极-发射极击穿电压和集基截止电流等。 - 开启特性包括不同集电极电流下的基极-发射极电压和集电极-发射极饱和电压。 - 动态特性包括正向电流传输比和输入/输出电容。

### 功能详解 该晶体管在不同的集电极电流和电压条件下表现出不同的电气特性,适用于需要抗辐射环境的开关应用。

### 应用信息 适用于需要抗辐射保护的军事和航空电子设备。

### 封装信息 - TO-5封装:2N3498L, 2N3499L, 2N2500L, 2N3501L。 - TO-39封装(TO-205AD):2N3498, 2N3499, 2N3500, 2N3501。
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