2N3507

2N3506 thru 2N3507A Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-5 and low profile U4 packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N3506 through 2N3507A series. • RoHS compliant versions available (commercial grade only). • V CR(sat) = 0.5 V @ I C = 500 mA. • Rise time t r = 30 ns max @ I C = 1.5 A, I B1 = 150 mA. • Fall time t f = 35 ns max @ I C = 1.5 A, I B1 = I B2 = 150 mA. TO-39 (TO-205AD) Package Also available in: TO-5 package APPLICATIONS / BENEFITS • General purpose transistors for medium power applications requiring high frequency switching and low package profile. • Military and other high-reliability applications. (long-leaded) 2N3506L – 2N3507AL U4 package (surface mount) 2N3506U4 – 2N3507AU4 MAXIMUM RATINGS Parameters / Test Conditions Symbol 2N3506 2N3507 Unit Collector-Emitter Voltage V CEO 40 50 V Collector-Base Voltage V CBO 60 80 V Emitter-Base Voltage V EBO 5.0 V Thermal Resistance Junction-to-Ambient R ӨJA 175 o Thermal Resistance Junction-to-Case R ӨJC 18 o IC 3.0 A PD 1.0 5.0 W T J , T stg -65 to +200 °C Collector Current Total Power Dissipation (1) @ T A = +25 °C (2) @ T C = +110 °C Operating & Storage Junction Temperature Range Notes: 1. Derate linearly 5.71 mW/°C for T A > +25 °C. 2. Derate linearly 55.5 mW/°C for T C > +110 °C. C/W C/W MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0016, Rev. 2 (111682) ©2011 Microsemi Corporation Page 1 of 6 2N3506 thru 2N3507A MECHANICAL and PACKAGING • • • • • • CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Leads are kovar, nickel plated, and finish is solder dip (Sn63/Pb37). Can be RoHS compliant (commercial grade only) with pure matte-tin (commercial grade only). MARKING: Part number, date code, manufacturer’s ID. POLARITY: NPN (see package outline). WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3506 A (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Level improvement A = 2V gain specification @ -55°C Blank = 1V gain specification @ -55°C JEDEC type number (see Electrical Characteristics table) Symbol C obo I CEO I CEX I EBO h FE V CEO V CBO V EBO SYMBOLS & DEFINITIONS Definition Common-base open-circuit output capacitance. Collector cutoff current, base open. Collector cutoff current, circuit between base and emitter. Emitter cutoff current, collector open. Common-emitter static forward current transfer ratio. Collector-emitter voltage, base open. Collector-emitter voltage, emitter open. Emitter-base voltage, collector open. T4-LDS-0016, Rev. 2 (111682) ©2011 Microsemi Corporation Page 2 of 6 2N3506 thru 2N3507A ELECTRICAL CHARACTERISTICS (T A = +25°C, unless otherwise noted) OFF CHARACTERISTICS Parameters / Test Conditions Symbol Min. 2N3506 2N3507 V (BR)CEO 40 50 Collector-Emitter Cutoff Current V CE = 40 V; V EB = 4 V V CE = 60 V; V EB = 4 V 2N3506 2N3507 I CEX Collector-Base Breakdown Voltage I C = 100 µA 2N3506 2N3507 Collector-Emitter Breakdown Voltage I C = 10 mA Emitter-Base Breakdown Voltage I E = 10 µA Max. Unit V 1.0 1.0 µA V (BR)CBO 60 80 V V (BR)EBO 5 V (1) ON CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Forward-Current Transfer Ratio I C = 500 mA, V CE = 1 V 2N3506 2N3507 h FE 50 35 250 175 Forward-Current Transfer Ratio I C = 1.5 A, V CE = 2 V 2N3506 2N3507 h FE 40 30 200 150 Forward-Current Transfer Ratio I C = 2.5 A, V CE = 3 V 2N3506 2N3507 h FE 30 25 Forward-Current Transfer Ratio I C = 3.0 A, V CE = 5 V 2N3506 2N3507 h FE 25 20 Forward-Current Transfer Ratio o I C = 500 mA, V CE = 1.0 V @ -55 C 2N3506 2N3507 h FE 25 17 Forward-Current Transfer Ratio o I C = 500 mA, V CE = 2.0 V @ -55 C 2N3506A 2N3507A h FE 25 17 Unit Collector-Emitter Saturation Voltage I C = 500 mA, I B = 50 mA V CE(sat) 0.5 V Collector-Emitter Saturation Voltage I C = 1.5 A, I B = 150 mA V CE(sat) 1.0 V Collector-Emitter Saturation Voltage I C = 2.5 A, I B = 250 mA V CE(sat) 1.5 V Base-Emitter Saturation Voltage I C = 500 mA, I B = 50 mA V BE(sat) 1.0 V Base-Emitter Saturation Voltage I C = 1.5 A, I B = 150 mA V BE(sat) 1.3 V Base-Emitter Saturation Voltage I C = 2.5 A, I B = 250 mA V BE(sat) 2.0 V 0.8 (1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%. T4-LDS-0016, Rev. 2 (111682) ©2011 Microsemi Corporation Page 3 of 6 2N3506 thru 2N3507A ELECTRICAL CHARACTERISTICS (T A = +25°C, unless otherwise noted) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Magnitude of Common Emitter Small-Signal ShortCircuit Forward Current Transfer Ratio I C = 100 mA, V CE = 5 V, f = 20 MHz |h fe | 3.0 15 Output Capacitance V CB = 10 V, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz C obo 40 pF Input Capacitance V EB = 3.0 V, I C = 0, 100 kHz ≤ f ≤ 1.0 MHz C ibo 300 pF Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Unit (2) Symbol Min. Delay Time I C = 1.5 A, I B1 = 150 mA td 15 ns Rise Time I C = 1.5 A, I B1 = 150 mA tr 30 ns Storage Time I C = 1.5 A, I B1 = I B2 = 150 mA ts 55 ns Fall Time I C = 1.5 A, I B1 = I B2 = 150 mA tf 35 ns (2) Consult MIL-PRF-19500/349 for additional infornation. T4-LDS-0016, Rev. 2 (111682) ©2011 Microsemi Corporation Page 4 of 6 2N3506 thru 2N3507A GRAPHS DC Operation Maximum Rating (W) Legend (top to bottom) VCE = 6 V VCE = 10 V VCE = 20 V VCE = 40 V VCE = 60 V o T C ( C) (Case) FIGURE 1 Temperature-Power Derating Curve o THETA ( C/W) NOTE: Thermal Resistance Junction to Case = 18.0 oC/W 10-5 .1 10-4 .1 10-3 .1 10-2 .1 10-1 .1 TIME (s) 0.1 1 10 100 FIGURE 2 Maximum Thermal Impedance (R ӨJC ) T4-LDS-0016, Rev. 2 (111682) ©2011 Microsemi Corporation Page 5 of 6 2N3506 thru 2N3507A PACKAGE DIMENSIONS CD CH HD LC Dimensions Inches Millimeters Min Max Min Max 0.305 0.335 7.75 8.51 0.240 0.260 6.10 6.60 0.335 0.370 8.51 9.40 0.200 TP 5.08 TP LD 0.016 LL LU 0.016 Symbol L1 0.021 0.41 See notes 7, 8, 11 0.019 0.41 0.050 Note 6 0.53 7, 8 0.48 7, 8 1.27 7, 8 L2 0.250 6.35 7, 8 P Q TL TW r α 0.100 2.54 0.050 0.029 0.045 0.028 0.034 0.010 45° TP 1.27 0.74 1.14 0.71 0.86 0.25 45° TP 5 4 3 2 10 6 NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. Dimension are in inches. Millimeters are given for general information only. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. All three leads. The collector shall be internally connected to the case. Dimension r (radius) applies to both inside corners of tab. Dimension LL shall be .5 inches (12.7mm) minimum and .75 inches (19.0 mm) maximum. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 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