2N3507A

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS 2N3506 2N3506A 2N3506L 2N3506AL 2N3507 2N3507A 2N3507L 2N3507AL JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25°C @ TC = 25°C (2) (1) Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3506 40 60 5.0 3.0 1.0 5.0 2N3507 50 80 Unit Vdc Vdc Vdc Adc W °C TO-5 (L-Versions) Operating & Storage Temperature Range Note: 1) 2) Derate linearly 5.71 mW/°C for TA > +25°C Derate linearly 55.5 mW/°C for TC > +25°C -65 to +200 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Emitter Cutoff Current VCE = 40Vdc VCE = 60Vdc Collector-Base Breakdown Voltage IC = 100µAdc Emitter-Base Breakdown Voltage IE = 10µAdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 500mAdc, VCE = 1Vdc Forward-Current Transfer Ratio IC = 1.5Adc, VCE = 2Vdc Forward-Current Transfer Ratio IC = 2.5Adc, VCE = 3Vdc T4-LDS-0016 Rev. 1 (072040) 2N3506 2N3507 2N3506 2N3507 2N3506 2N3507 hFE hFE hFE 50 35 40 30 30 25 Page 1 of 2 250 175 200 150 2N3506 2N3507 2N3506 2N3507 V(BR)CEO 40 50 1.0 1.0 60 80 5 Vdc Symbol Min. Max. Unit ICEX V(BR)CBO V(BR)EBO µAdc Vdc Vdc TO-39 (TO-205-AD) TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERISTICS (3) Symbol 2N3506 2N3507 2N3506 2N3507 2N3506A 2N3507A Min. 25 20 25 17 25 17 Max. Unit Forward-Current Transfer Ratio IC = 3.0Adc, VCE = 5Vdc Forward-Current Transfer Ratio IC = 500mAdc, VCE = 1.0Vdc Forward-Current Transfer Ratio IC = 500mAdc, VCE = 2Vdc Collector-Emitter Saturation Voltage IC = 500mAdc, IB = 50mAdc Collector-Emitter Saturation Voltage IC = 1.5Adc, IB = 150mAdc Collector-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc Base-Emitter Saturation Voltage IC = 500mAdc, IB = 50mAdc Base-Emitter Saturation Voltage IC = 1.5Adc, IB = 150mAdc Base-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 100mAdc, VCE = 5Vdc, f = 20MHz Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Input Capacitance VEB = 3.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz SWITCHING CHARACTERISTICS (4) Parameters / Test Conditions Delay Time IC = 1.5Adc, IB1 = 150mAdc Rinse Time IC = 1.5Adc, IB1 = 150mAdc Storage Time IC = 1.5Adc, IB1 = IB2 = 150mAdc Fall Time IC = 1.5Adc, IB1 = IB2 = 150mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. (4) Consult MIL-PRF-19500/349 For Additional Infornation. T4-LDS-0016 Rev. 1 (072040) hFE hFE hFE VCE(sat) VCE(sat) VCE(sat) VBE(sat) VBE(sat) VBE(sat) 0.5 1.0 1.5 1.0 0.8 1.3 2.0 Vdc Vdc Vdc Vdc Vdc Vdc Symbol |hfe| Min. 3.0 Max. 15 Unit Cobo Cibo 40 300 pF pF Symbol td tr ts tf Min. Max. 15 30 55 35 Unit ns ns ns ns Page 2 of 2