2N3634_1

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3637 2N3637L 2N3637UB JANSM – 3K Rads (Si) JANSD – 10K Rads (Si) JANSP – 30K Rads (Si) JANSL – 50K Rads (Si) JANSR – 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC 2N3634* 2N3636* 2N3635* 2N3637* 140 140 5.0 1.0 175 175 5.0 1.0 Unit Vdc Vdc Vdc Adc TO-5* 2N3634L, 2N3635L 2N3636L, 2N3637L @ TA = +25°C 1.0 W PT ** @ TC = +25°C 5.0 W UB: @ TC = +25°C 1.5 W Operating & Storage Junction Temperature -65 to +200 °C TJ, Tstg Range * Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices. ** Consult 19500/357 for De-Rating curves. ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc 2N3634, 2N3635 2N3636, 2N3637 Collector-Base Cutoff Current VCB = 100Vdc VCB = 140Vdc VCB = 175Vdc Emitter-Base Cutoff Current VEB = 3.0Vdc VEB = 5.0Vdc Collector-Emitter cutoff Current VCE = 100Vdc T4-LDS-0065 Rev. 2 (100377) Symbol Min. Max. Unit TO-39* (TO-205AD) 2N3634, 2N3635 2N3636, 2N3637 V(BR)CEO 140 175 100 10 10 50 10 10 Vdc 2N3634, 2N3635 2N3636, 2N3637 ICBO ηAdc μAdc μAdc 3 PIN ηAdc μAdc μAdc Page 1 of 5 2N3634UB, 2N3635UB 2N3636UB, 2N3637UB IEBO ICEO TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions ON CHARACTERISTICS (1) Symbol Min. Max. Unit Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc IC = 0.1mAdc, VCE = 10Vdc IC = 1.0mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 50mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 50mAdc, IB = 5.0mAdc Base-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 50mAdc, IB = 5.0mAdc 2N3634, 2N3636 hFE 2N3635, 2N3637 25 45 50 50 30 55 90 100 100 60 150 300 VCE(sat) 0.3 0.6 0.8 0.9 Vdc VBE(sat) 0.65 Vdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 30mAdc, VCE = 30Vdc, f = 100MHz Forward Current Transfer Ratio IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz 2N3634, 2N3636 2N3635, 2N3637 2N3634, 2N3636 2N3635, 2N3637 1.5 2.0 40 80 100 200 8.0 8.5 160 320 600 1200 200 10 Ω μs pF |hfe| hfe Small-Signal Short-Circuit Input Impedance IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz 2N3634, 2N3636 2N3635, 2N3637 Small-Signal Open-Circuit Input Impedance IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz Output Capacitance VCB = 20Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz Input Capacitance VEB = 1.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz Noise Figure VCE = 10Vdc, IC = 0.5mAdc, Rg = 1.0kΩ hie hoe Cobo Cibo f = 100Hz f = 1.0kHz f = 10kHz 75 pF NF 5.0 3.0 3.0 dB (1) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0% T4-LDS-0065 Rev. 2 (100377) Page 2 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com SAFE OPERATING AREA DC Tests TC = 25°C, 1 Cycle, t = 1.0s Test 1 VCE = 100Vdc, IC = 30mAdc VCE = 130Vdc, IC = 20mAdc Test 2 VCE = 50Vdc, IC = 95mAdc Test 3 VCE = 5.0Vdc, IC = 1.0Adc 2N3634, 2N3635 2N3636, 2N3637 T4-LDS-0065 Rev. 2 (100377) Page 3 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PACKAGE DIMENSIONS Dimensions Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.10 6.60 .335 .370 8.51 9.40 .200 TYP 5.08 TYP .016 .021 0.41 0.53 See notes 7, 9, and 10 .016 .019 0.41 0.48 050 1.27 .250 6.35 .100 2.54 .050 1.27 .010 0.254 .029 .045 0.74 1.14 .028 .034 0.71 0.86 45° TP 45° TP Emitter Base Collector Inches Ltr CD CH HD LC LD LL LU L1 L2 P Q r TL TW α Term 1 Term 2 Term 3 Notes 7 6 7 7 7 5 8 4 3 6 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. Beyond r maximum, TW must be held to a minimum length of .021 inch (0.53 mm). 3. 4. TL measured from maximum HD. CD shall not vary more than ±.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 5. 6. Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by direct methods or by gauge and gauging procedure. 7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. r (radius) applies to both inside corners of tab. 8. 9. For transistor types 2N3634 through 2N3637, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm) maximum (TO-39). 10. For transistor types 2N3634L through 2N3637L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum (TO-5). 11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 1: Physical dimensions (TO-5 and TO-39) T4-LDS-0065 Rev. 2 (100377) Page 4 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are. equivalent to φx symbology Ltr BH BL BW CL CW LL1 LL2 LS1 LS2 LW r r1 r2 Min .046 .115 .085 .022 .017 .036 .071 .016 Inches Dimensions Millimeters Max Min Max .056 1.17 1.42 .128 2.92 3.25 .108 2.16 2.74 .128 3.25 .108 2.74 .038 0.56 0.96 .035 0.43 0.89 .040 0.91 1.02 .079 1.81 2.01 .024 0.41 0.61 .008 .203 .012 .305 .022 .559 Notes FIGURE 2: Physical dimensions, surface mount 2N3634UB through 2N3637UB (UB version). T4-LDS-0065 Rev. 2 (100377) Page 5 of 5