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2N3740A

2N3740A

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    2N3740A - Medium Power PNP Transistors - Microsemi Corporation

  • 数据手册
  • 价格&库存
2N3740A 数据手册
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 APPLICATIONS: • • • 2N3740A Drivers Switches Medium-Power Amplifiers FEATURES: • • • • • Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Low Collector Cutoff Current: 100 nA (Max) 2N3740A Medium Power PNP Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-66 ABSOLUTE MAXIMUM RATINGS: SYMBOL VCEO* VEB* VCB* IC* IC* IB* TSTG* TJ* PD* θ * CHARACTERISTIC Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Peak Collector Current Continuous Collector Current Base Current Storage Temperature Operating Junction Temperature Total Device Dissipation TC = 25° C Derate above 25° C Thermal Impedance VALUE 60 7.0 60 10 4.0 2.0 -65 to 200 -65 to 200 25 0.143 7 UNITS Vdc Vdc Vdc Adc Adc Adc °C °C Watts W/° C ° C/W JC Indicates JEDEC registered data. MSC1040.PDF 03-12-99 2N3740A ELECTRICAL CHARACTERISTICS: (25° Case Temperature Unless Otherwise Noted) SYMBOL VCEO(sus)* IEB0* ICEX* ICEO* ICBO* hFE* CHARACTERISTIC Collector-Emitter Sustaining Voltage Emitter Base Cutoff Current Collector Cutoff Current Collector-Emitter Cutoff Current Collector Base Cutoff Current DC Current Gain (Note 1) TEST CONDITIONS IC = 100 mAdc, IB = 0 (Note 1) VEB = 7.0 Vdc VCE = 60 Vdc, VBE(off) = 1.5 Vdc VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 150° C VCE = 40 Vdc, IB = 0 VCB = 60 Vdc, IE = 0 IC = 100 mAdc, VCE = 1.0 Vdc IC = 250 mAdc, VCE = 1.0 Vdc IC = 500 mAdc, VCE = 1.0 Vdc IC = 1.0 Adc, VCE = 1.0 Vdc IC = 1.0 Adc, IB = 125 mAdc IC = 250 mAdc, VCE = 1.0 Vdc IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 MHz IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz VCB = 10 Vdc, IC = 0, f = 100 kHz VALUE Min. Max. 60 ------------------40 30 20 10 ---100 100 0.5 1.0 100 ---100 ------0.6 Units Vdc nAdc nAdc mAdc µ Adc nAdc ------------Vdc VCE(sat)* VBE* fT* hfe* Cob* Collector-Emitter Saturation Voltage (Note 1) Base-Emitter Voltage (Note 1) Current Gain Bandwidth Product Small-Signal Current Gain Common Base Output Capacitance ---3.0 25 ---- 1.0 ------100 Vdc MHz ---pF Note 1: Pulse Test: PW ≤ 300µ s, Duty Cycle ≤ 2.0% * Indicates JEDEC registered data. MSC1040.PDF 03-12-99 2N3740A PACKAGE MECHANICAL DATA: R.145 [3.68] MAX .050 [1.27] .075 [1.91] .470 [11.94] .500 [12.70] .360 [9.14] MIN SEATING PLANE .095 [2.41] .105 [2.67] .620 [15.75] MAX .958 [24.33] .962 [24.43] 2 1 .050 [1.27] MAX .250 [6.35] .340 [8.64] R.350 [8.89] MAX NOTE: DIMENSIONS IN [ ] = MILLIMETERS .570 [14.48] .590 [14.99] .190 [4.83] .210 [5.33] .028 [0.71] .034 [0.86] .142 [3.61] .152 [3.86] MSC1040.PDF 03-12-99
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