2N3810_11

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 DEVICES LEVELS 2N3810 2N3810L 2N3810U 2N3811 2N3811L 2N3811U JAN JANTX JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC One Section 1 Total Power Dissipation @ TA = +25°C PT TJ, Tstg 200 Value 60 60 5.0 50 Both Sections 2 350 mW °C TO-78 Unit Vdc Vdc Vdc mAdc Operating & Storage Junction Temperature Range -65 to +200 NOTES: 1. Derate linearly 1.143mW/°C for TA > +25°C (one section) 2. Derate linearly 2.000mW/°C for TA > +25°C (both sections) ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 100μAdc Collector-Base Cutoff Current VCB = 50Vdc VCB = 60Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.0Vdc Symbol Min. Max. Unit V(BR)CEO 60 Vdc U - Package ηAdc μAdc ηAdc μAdc ICBO 10 10 10 10 IEBO T4-LDS-0118 Rev. 2 (110152) Page 1 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (con’t) Parameters / Test Conditions ON CHARACTERTICS Forward-Current Transfer Ratio IC = 10μAdc, VCE = 5.0Vdc IC = 100μAdc, VCE = 5.0Vdc IC = 1.0mAdc, VCE = 5.0Vdc IC = 10mAdc, VCE = 5.0Vdc IC = 1.0μAdc, VCE = 5.0Vdc IC = 10μAdc, VCE = 5.0Vdc IC = 100μAdc, VCE = 5.0Vdc IC = 1.0mAdc, VCE = 5.0Vdc IC = 10mAdc, VCE = 5.0Vdc Collector-Emitter Saturation Voltage IC = 100μAdc, IB = 10μAdc IC = 1.0mAdc, IB = 100μAdc Base-Emitter Saturation Voltage IC = 100μAdc, IB = 10μAdc IC = 1.0mAdc, IB = 100μAdc Base-Emitter Non-Saturation Voltage VCE = 5.0Adc, IC = 100μAdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio, Magnitude IC = 500μAdc, VCE = 5.0Vdc, f = 30MHz IC = 1.0mAdc, VCE = 5.0Vdc, f = 100MHz Small-Signal Short Circuit Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N3810, 2N3810L , 2N3810U 2N3811, 2N3811L , 2N3811U Small-Signal Short Circuit Input Impedance IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N3810, 2N3810L , 2N3810U 2N3811, 2N3811L , 2N3811U 1.0 1.0 150 300 3.0 3.0 5.0 Symbol Min. Max. Unit 2N3810, 2N3810L , 2N3810U hFE 100 150 150 125 75 225 300 300 250 450 450 2N3811, 2N3811L, 2N3811U hFE 900 900 VCE(sat) 0.2 0.25 Vdc VBE(sat) 0.7 0.8 Vdc VBE 0.7 Vdc |hfe| 5.0 600 900 30 40 60 kΩ hfe hje Small-Signal Short Circuit Output Admittance IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N3810, 2N3810L , 2N3810U 2N3811, 2N3811L , 2N3811U hoe μmhos T4-LDS-0118 Rev. 2 (110152) Page 2 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DYNAMIC CHARACTERISTICS (cont.) Parameters / Test Conditions Output Capacitance VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Input Capacitance VEB = 5.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Noise Figure IC = 100μAdc, VCE = 10Vdc, f = 100Hz, RG = 3.0kΩ IC = 100μAdc, VCE = 10Vdc, f = 1.0kHz, RG = 3.0kΩ IC = 100μAdc, VCE = 10Vdc, f = 10kHz, RG = 3.0kΩ IC = 100μAdc, VCE = 10Vdc, f = 10Hz to 15.7kHz, RG = 3.0kΩ IC = 100μAdc, VCE = 10Vdc, f = 100Hz, RG = 3.0kΩ IC = 100μAdc, VCE = 10Vdc, f = 1.0kHz, RG = 3.0kΩ IC = 100μAdc, VCE = 10Vdc, f = 10kHz, RG = 3.0kΩ IC = 100μAdc, VCE = 10Vdc, f = 10Hz to 15.7kHz, RG = 3.0kΩ 2N3810, L, U 2N3810, L, U 2N3810, L, U 2N3810, L, U 2N3811, L, U 2N3811, L, U 2N3811, L, U 2N3811, L, U F1 F2 F3 F4 F1 F2 F3 F4 7.0 3.0 2.5 3.5 4.0 1.5 2.0 2.5 dB dB Symbol Cobo CIbo Min. Max. 5.0 8.0 Unit pF pF T4-LDS-0118 Rev. 2 (110152) Page 3 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Ltr CD CH HD HT LC LD LL α TL TW DIMENSIONS Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .150 .185 3.81 4.70 .335 .370 8.51 9.40 .009 .041 0.23 1.04 .200 BSC 5.08 BSC .016 .021 0.41 0.53 See notes 10, 11, and 13 45 TP 45 TP .029 .045 0.74 1.14 .028 .034 0.71 0.86 Notes 10 9 5, 6 4, 5 NOTES: 1 Dimensions are in inches. 2 Millimeters are given for general information only. 3 Refer to rules for dimensioning Semiconductor Product Outlines included in Publication No. 95. 4 Lead number 4 and 8 omitted on this variation. 5 TW must be held to a minimum length of .021 inch (0.53 mm). 6 LL measured from maximum HD. 7 Details of outline in this zone optional. 8 CD shall not vary more than .010 inch (0.25mm) in zone P. This zone is controlled for automatic handling. 9 Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure described on gauge drawing GS-1. 10 LD applies to LL minimum. 11 r (radius) applies to both inside corners of tab. 12 For transistor types 2N3810 and 2N3811, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm) maximum. (TO78). 13 For transistor types 2N3810L and 2N3811L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum. 14 In accordance with AMSE Y14.5M, diameters are equivalent to φx symbology. 15 Leads 3 and 5 = emitter, leads 2 and 6 = base, leads 1 and 7 = collector. FIGURE 1. Physical dimensions (similar to TO-78) T4-LDS-0118 Rev. 2 (110152) Page 4 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Symbol BL BL2 BW BW2 CH LH LL1 LL2 LS1 LS2 LW Dimensions Inches Millimeters Min Max Min Max .240 .250 6.10 6.35 .250 6.35 .165 .175 4.19 4.45 .175 4.45 .044 .080 1.12 2.03 .026 .039 0.66 0.99 .060 .070 1.52 1.78 .082 .098 2.08 2.49 .095 .105 2.41 2.67 .045 .055 1.14 1.40 .022 .028 0.56 0.71 Pin no. 1 2 3 4 5 6 Transistor Collector no. 1 Base no. 1 Base no. 2 Collector no. 2 Emitter no. 2 Emitter no. 1 NOTES: 1 Dimensions are in inches. 2 Millimeters are given for general information only. 3 In accordance with AMSE Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions (2N3810U and 2N3811U). 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