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2N3822

2N3822

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    2N3822 - N-CHANNEL J-FET DEPLETION MODE - Microsemi Corporation

  • 数据手册
  • 价格&库存
2N3822 数据手册
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 2N3821UB 2N3822UB 2N3823UB MQ = JAN Equivalent MX = JANTX Equivalent MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation TA = +25°C (1) Operating Junction & Storage Temperature Range Symbol VGSR VDS VDG IGF PT Tj, Tstg 2N3821, UB 2N3822, UB 50 50 50 10 2N3823, UB 30 30 30 Unit V V V mA mW °C 300 -55 to + 200 Note: (1) Derate linearly 1.7mW/°C for TA > +25°C. ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Symbol Min. Max. Unit TO-72 (TO-206AF) Gate-Source Breakdown Voltage VDS = 0, IG = 1.0μA dc Gate Reverse Current VDS = 0, VGS = 30V dc VDS = 0, VGS = 30V dc VDS = 0, VGS = 20V dc Zero-Gate-Voltage Drain Current VGS = 0, VDS = 15V dc 2N3821 / UB 2N3822 / UB 2N3823 / UB 2N3821 / UB 2N3822 / UB 2N3823 / UB 2N3821 / UB 2N3822 / UB 2N3823 / UB 2N3821 / UB 2N3822 / UB 2N3823 / UB 2N3821 / UB 2N3822 / UB 2N3823 / UB V(BR)GSSR 50 50 30 0.1 0.1 0.5 0.5 2.0 4.0 0.5 1.0 1.0 2.5 10 20 2.0 4.0 7.5 4.0 6.0 8.0 Vdc IGSSR ηA IDSS mA Gate-Source Voltage VDS = 15V dc, ID = 50μA dc VDS = 15V dc, ID = 200μA dc VDS = 15V dc, ID = 400μA dc Gate-Source Cutoff Voltage VDS = 15V dc, ID = 0.5ηA dc VGS Vdc UB - Package VGS(off) Vdc T4-LDS-0005 Rev. 2 (101425) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Common Source, Short-Circuit Forward Transfer Admittance VGS = 0, VDS = 15V dc, f = 1.0kHz 2N3821 / UB 2N3822 / UB 2N3823 / UB Small-Signal, Common Source, Short-Circuit Output Admittance VGS = 0, VDS = 15V dc, f = 1.0kHz 2N3821 / UB 2N3822 / UB 2N3823 / UB Small-Signal, Common-Source Short-Circuit Input Capacitance VGS = 0V dc, VDS = 15V dc, 100kHz ≤ f ≤ 1.0MHz Small-Signal, Common-Source Reverse Transfer Capacitance 2N3821 / UB VDS = 15V dc, VGS = 0, 100kHz ≤ f ≤ 1.0MHz 2N3822 / UB 2N3823 / UB Small-Signal, Common-Source, Short-Circuit Forward Transfer Admittance VGS = 0, VDS = 15V dc, f = 100MHz 2N3821 / UB f = 100MHz 2N3822 / UB f = 200MHz 2N3823 / UB Small-Signal, Common-Source Short-Circuit Input Conductance VGS = 0, VDS = 15V dc, f = 200MHz 2N3823 (only) Small-Signal, Common-Source Short-Circuit Output Conductance VGS = 0, VDS = 15V dc, f = 200MHz 2N3823 (only) Common Source Spot Noise Figure VGS = 0, VDS = 15V dc, RG = 1MΩ f = 10Hz f = 1.0kHz Common Source Spot Noise Figure VGS = 0, VDS = 15V dc, RG = 1kΩ f = 105MHz Symbol |yfs|1 Min. 1500 3000 3500 Max. 4500 6500 6500 10 20 35 6.0 3.0 3.0 2.0 1500 3000 3200 800 Unit μS |yos| μS Ciss pF Crss pF |yfs|3 μS gis gos μS μS 200 2N382, 2N3822 / UB 2N3821, 2N3822, 2N3823 / UB 2N3823 / UB (only) NF1 5.0 2.0 2.5 dB NF2 dB T4-LDS-0005 Rev. 2 (101425) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Dimensions Millimeters Inches Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.84 .050 1.27 .250 6.35 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .040 1.02 .007 0.18 .028 .048 0.71 1.22 .036 .046 0.91 1.17 45° TP Ltr CD CH HD L1 L2 LC LD LL LU Q r TL TW α Notes 2, 6 6 3, 6 8 NOTE: * 1 Dimensions are in inches. Millimeters are given for general information only. 2 Measured in the zone beyond .250 (6.35 mm) from the seating plane. 3 Measured in the zone .050 (1.27 mm) and .250 (6.35 mm) from the seating plane. 4 When measured in a gauging plane .054 +.001, -.000 (1.37 +.3, -.00 mm) before the seating plane of the transistor, maximum diameter leads shall be within .007 (.18 mm) of their true location relative to a maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead tolerance. 5 The active elements are electrically insulated from the case. 6 All 4 leads. 7 Lead 1 is the source, lead 2 is the drain, lead 3 is the gate, and lead 4 is the case. 8 Symbol TL is measured from HD maximum. 9 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. *FIGURE 1 Physical dimensions (similar to TO-72) T4-LDS-0005 Rev. 2 (101425) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NOTES: 1. Dimensions are in inches. * 2. Millimeters are given for general information only. * 3. Hatched areas on package denote metallized areas. * 4. Lid material: Kovar. * 5. Pad 1 = Drain, Pad 2 = Source, Pad 3 = Gate, Pad 4 = Shielding connected to the lid. Symbol BH BL BW CL CW LL1 LL2 LS1 LS2 LW r r1 r2 Dimensions Inches Millimeters Min Max Min Max .046 .056 1.17 1.42 .115 .128 2.92 3.25 .085 .108 2.16 2.74 .128 3.25 .108 2.74 .022 .038 0.56 0.96 .017 .035 0.43 0.89 .036 .040 0.91 1.02 .071 .079 1.81 2.01 .016 .024 0.41 0.61 .008 .203 .012 .305 .022 .559 Note * FIGURE 2. Physical dimensions, surface mount (2N3821UB, 2N3822UB, AND 2N3823UB). T4-LDS-0005 Rev. 2 (101425) Page 4 of 4
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