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2N3960UB

2N3960UB

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    2N3960UB - NPN SILICON SWITCHING TRANSISTOR - Microsemi Corporation

  • 数据手册
  • 价格&库存
2N3960UB 数据手册
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/399 DEVICES LEVELS 2N3960 2N3960UB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = +25°C Operating & Storage Junction Temperature Range Note: Derate linearly 2.3mW/°C above TA = +25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10μAdc Collector-Base Cutoff Current VCB = 20Vdc Emitter-Base Cutoff Current VEB = 4.5Vdc Collector-Emitter Cutoff Current VCE = 10Vdc, VBE = 0.4Vdc VCE = 10Vdc, VBE = 2.0Vdc V(BR)CEO 12 Vdc UB – 2N3960UB ICBO 10 μAdc μAdc μAdc ηAdc Symbol Min. Max. Unit Symbol VCEO VCBO VEBO PT (1) Top, Tstg Value 12 20 4.5 0.4 -65 to +200 Unit Vdc Vdc Vdc W °C TO-18 – 2N3960 IEBO ICEX1 ICEX2 10 1 5 T4-LDS-0161 Rev. 1 (100514) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 1mAdc, VCE = 1Vdc IC = 10mAdc, VCE = 1Vdc IC = 30mAdc, VCE = 1Vdc Collector-Emitter Saturation Voltage IC = 1.0mAdc, IB = 0.1mAdc IC = 30mAdc, IB = 3.0mAdc Base-Emitter Saturation Voltage VCE = 1.0Vdc, IC = 1.0mAdc VCE = 1.0Vdc, IC = 3.0mAdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Small – Signal Short – Circuit - Forward Current Transfer Ratio IC = 5.0mAdc, VCE = 4Vdc, f = 100MHz IC = 10.0mAdc, VCE = 4Vdc, f = 100MHz IC = 30.0mAdc, VCE = 4Vdc, f = 100MHz Output Capacitance VCB = 4Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Symbol Min. Max. Unit hFE 40 60 30 0.2 0.3 300 Symbol Min. Max. Unit VCE(sat) Vdc VBE(sat) 0.8 1.0 Vdc |hfe| 13 14 12 Cobo 2.5 pF Cibo 2.5 pF T4-LDS-0161 Rev. 1 (100514) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .040 1.02 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .010 0.25 45° TP 45° TP Note 6 7,11 7 12 7 7 5 4 3 9 10 6 NOTES: 1. * 2. 3. 4. 5. 6. Dimensions are in inches. Millimeters are given for general information only. Symbol TL is measured from HD maximum. Details of outline in this zone are optional. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane .054 (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by gauge. 7. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum. 8. Lead number three is electrically connected to case. 9. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 10. Symbol r applied to both inside corners of tab. 11. Measured in a zone beyond .250 (6.35 mm) from the seating plane. 12. Measured in the zone between .050 (1.27 mm) and .250 (6.35mm) from the seating plane. * 13. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. * 14. Lead 1 = emitter, lead 2 = base, and case is collector. *FIGURE 1. Physical dimensions (similar to TO-18) T4-LDS-0161 Rev. 1 (100514) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Symbol BH BL BW CL CW LL1 LL2 Dimensions Inches Millimeters Min Max Min Max .046 .056 1.17 1.42 .115 .128 2.92 3.25 .085 .108 2.16 2.74 .128 3.25 .108 2.74 .022 .038 0.56 0.96 0.17 .035 0.43 0.89 Note Symbol LS1 LS2 LW r r1 r2 Dimensions Inches Millimeters Min Max Min Max .036 .040 0.91 1.02 .071 .079 1.81 2.01 .016 .024 0.41 0.61 .008 .203 .012 .306 .022 .559 Note NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metalized areas. 4. Lid material: Kovar. 5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 6. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions, 2N3960UB, surface mount T4-LDS-0161 Rev. 1 (100514) Page 4 of 4
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