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2N4029_1

2N4029_1

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    2N4029_1 - PNP SILICON SWITCHING TRANSISTOR - Microsemi Corporation

  • 数据手册
  • 价格&库存
2N4029_1 数据手册
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/512 DEVICES LEVELS 2N4029 2N4033 2N4033UA 2N4033UB JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C 2N4029 1 2N4033 2 2N4033UA, UB3 2N4029 2N4033 Symbol VCEO VCBO VEBO IC PT Tj, Tstg RθJC Value 80 80 5.0 1.0 0.5 0.8 0.5 -65 to +200 80 40 Unit Vdc Vdc Vdc Adc W °C °C/W TO-18 (TO-206AA) 2N4029 Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to-Case Note: 1. 2. 3. Derate linearly 2.86mW/°C for TA > +25°C Derate linearly 4.56mW/°C for TA > +25°C For UB package and use RθJC or see thermal curves in /512 TO-39 (TO-205AD) 2N4033 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Symbol Min. Max. Unit Collector-Base Cutoff Current VCB = 80Vdc VCB = 60Vdc VCB = 60Vdc, TA = +150°C Emitter-Base Cutoff Current VEB = 5.0Vdc VEB = 3.0Vdc Collector-Emitter Cutoff Current VBE = 2.0Vdc, VCE = 60Vdc ICBO 10 10 25 10 25 25 μAdc ηAdc μAdc μAdc ηAdc ηAdc UA Package IEBO ICEX UB Package Page 1 of 6 T4-LDS-0157 Rev. 2 (101305) TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 100μAdc, VCE = 5.0Vdc IC = 100mAdc, VCE = 5.0Vdc IC = 500mAdc, VCE = 5.0Vdc IC = 1.0Adc, VCE = 5.0Vdc IC = 500mAdc, VCE = 5.0Vdc, TA = -55°C Collector-Emitter Saturation Voltage IC = 150mAdc, IB = 15mAdc IC = 500mAdc, IB = 50mAdc IC = 1.0Adc, IB = 100mAdc Base-Emitter Voltage IC = 150mAdc, IB = 15mAdc IC = 500mAdc, IB = 50mAdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small–Signal Short-Circuit Forward Current Transfer Ratio IC = 50mAdc, VCE = 10Vdc, f = 100MHz Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz SWITCHING CHARACTERISTICS Parameters / Test Conditions On-Time VCC = 31.9Vdc; IC = 500mAdc; IB1 = 50mAdc Rise Time VCC = 31.9Vdc; IC = 500mAdc; IB1 = 50mAdc Storage Time VCC = 31.9V, IC = 500madc, IB1 = 50mAdc Fall Time VCC = 31.9V, IC = 500madc, IB1 = 50mAdc (4) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%. (3) Symbol Min. Max. Unit hFE 50 100 70 25 30 300 VCE(sat) 0.15 0.50 1.0 0.9 1.2 Vdc VBE(sat) Vdc Symbol |hfe| Min. Max. Unit 1.5 6.0 20 80 pF pF Cobo Cibo Symbol t Min. Max. 15 25 175 35 Unit ηs ηs ηs ηs d r t t s f t T4-LDS-0157 Rev. 2 (101305) Page 2 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 Q TL TW r P α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.34 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .040 1.02 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .010 0.25 .100 2.54 45° TP Notes 6 7, 8 7, 8, 12 7, 8 7, 8 7, 8 5 3, 4 3 10 6 NOTES: 1 Dimension are in inches. 2 Millimeters equivalents are given for general information only. 3 Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4 Dimension TL measured from maximum HD. 5 Body contour optional within zone defined by HD, CD, and Q. 6 Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7 Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8 All three leads. 9 The collector shall be internally connected to the case. 10 Dimension r (radius) applies to both inside corners of tab. 11 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 12 For “L” suffix devices, dimension LL is 1.50 (38.10mm) minimum, 1.75 (44.45mm) maximum. FIGURE 1. Physical dimensions for 2N4029 (TO-18). T4-LDS-0157 Rev. 2 (101305) Page 3 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Symbol CD CH HD LC LD LL LU L1 L2 Q TL TW r P α Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.10 6.60 .335 .370 8.51 9.40 .200 TP 5.08 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .050 1.27 .029 .045 0.74 1.14 .028 .034 0.71 0.86 .010 0.25 .100 2.54 45° TP Notes 6 7, 8 7, 8, 12 7, 8 7, 8 7, 8 5 3, 4 3 10 6 NOTES: 1 Dimension are in inches. 2 Millimeters equivalents are given for general information only. 3 Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4 Dimension TL measured from maximum HD. 5 Body contour optional within zone defined by HD, CD, and Q. 6 Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7 Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8 All three leads. 9 The collector shall be internally connected to the case. 10 Dimension r (radius) applies to both inside corners of tab. 11 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 12 For “L” suffix devices, dimension LL is 1.50 (38.10mm) minimum, 1.75 (44.45mm) maximum. FIGURE 2. Physical dimensions for 2N4033 (TO-39). T4-LDS-0157 Rev. 2 (101305) Page 4 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Ltr. A A1 B1 B2 B3 D D1 Dimensions Inches Millimeters Min Max Min Max .061 .075 1.55 1.91 .029 .041 0.74 1.04 .022 .028 0.56 0.71 .075 REF 1.91 REF .006 .022 0.15 0.56 .145 .155 3.68 3.93 .045 .055 1.14 1.39 Note 3 Ltr. D2 D3 E E3 L1 L2 L3 5 Dimensions Inches Millimeters Min Max Min Max .0375 BSC 0.952 BSC .155 3.94 .215 .225 5.46 5.72 .225 5.72 .032 .048 0.81 1.22 .072 .088 1.83 2.24 .003 .007 0.08 0.18 Note 5 NOTES: 1 Dimensions are in inches. 2 Millimeters equivalents are given for general information only. 3 Dimension “A” controls the overall package thickness. When a window lid is used, dimension “A” must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4 The corner shape (square, notch, radius, etc) may vary at the manufacturer’s option, from that shown on the drawing. 5 Dimensions “B3” minimum and “L3” minimum and the appropriately castellation length define an unobstructed threedimensional space traversing all of the ceramic layers in which a castellation was designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension “B3” maximum and “L3” maximum define the maximum width and depth of the castellation at any point on its surface. Measurement of these dimensions may be made prior to solder dipping. 6 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 3. Physical dimensions, surface mount (UA version). T4-LDS-0157 Rev. 2 (101305) Page 5 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Symbol BH BL BW CL CW LL1 LL2 Dimensions Inches Millimeters Min Max Min Max .046 .056 1.17 1.42 .115 .128 2.92 3.25 .085 .108 2.16 2.74 .128 3.25 .108 2.74 .022 .038 0.56 0.96 .017 .035 0.43 0.89 Note Symbol LS1 LS2 LW r r1 r2 Dimensions Inches Millimeters Min Max Min Max .036 .040 0.91 1.02 .071 .079 1.81 2.01 .016 .024 0.41 0.61 .008 .203 .012 .305 .022 .559 Note NOTES: 1 Dimensions are in inches. 2 Millimeters are given for general information only. 3 Hatched areas on package denote metalized areas. 4 Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 4. Physical dimensions, surface mount (UB version). T4-LDS-0157 Rev. 2 (101305) Page 6 of 6
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