2N4416A_08

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET Equivalent To MIL-PRF-19500/428 DEVICES LEVELS 2N4416A MQ = JAN Equivalent MX = JANTX Equivalent MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation TA = +25°C(1) Operating Junction & Storage Temperature Range (1) Derate linearly 1.7 mW/°C for TA > +25°C. ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Gate-Source Breakdown Voltage VDS = 0, IG = 1.0μA dc Gate Reverse Current VDS = 0, VGS = 20V dc Drain Current VDS = 15V dc Gate-Source Voltage VDS = 15V, ID = 0.5mA dc Gate-Source Cutoff Voltage VDS = 15V, ID = 1.0ηA dc Gate-Source Forward Voltage VDS = 0V, IG = 1.0mA dc Magnitude of Small-Signal, Common-Source Short-Circuit Forward Transfer Admittance (2) VGS = 0, VDS = 15V dc, f = 1.0kHz Small-Signal, Common-Source Short-Circuit Input Capacitance VGS = 0, VDS = 15V dc, 100kHz ≤ f ≤1.0MHz Small-Signal, Common-Source Short-Circuit Reverse Transfer Capacitance VDS = 15V dc, VGS = 0, 100kHz ≤ f ≤1.0MHz Small-Signal, Common-Source Short-Circuit Output Capacitance VDS = 15V dc, VGS = 0, 100kHz ≤ f ≤1.0MHz (2) Pulse Width = 100ms; Duty Cycle = 100% T4-LDS-0008 Rev. 2 (0080111) Page 1 of 1 Symbol VGS VDS VDG IG PT Tj, Tstg Value -35 35 35 10 300 -65 to + 200 Unit Vdc Vdc Vdc mAdc mWdc °C Symbol V(BR)GSS IGSS IDSS VGS VGS(off) VGSF |yfs|(2) Min. -35 Max. Unit Vdc -0.1 5 -1 -2.5 15 -5.5 -6.0 1 ηAdc mAdc Vdc Vdc Vdc TO-72 (TO-206AF) 4.5 7.5 ms Ciss 4.0 pF Crss 0.8 pF Coss 2.0 pF