2N4427

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA Power Gain, GPE = 10dB (Min) @ 175 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 2.0 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 1.0 5.71 Watts mW/ ºC MSC1301.PDF 10-25-99 2N4427 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCER BVCEO ICEO ICEX IEBO Test Conditions Min. Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector Cutoff Current (VCE = 12 Vdc, IB = 0) Collector Cutoff Current (VCE = 40 Vdc, VBE = -1.5 Vdc) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) 40 20 Value Typ. Max. 20 100 100 Unit Vdc Vdc µA µA µA (on) HFE DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 360 mAdc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 20 mAdc) 10 5 200 Vdc VCE(sat) - - 0.5 DYNAMIC Symbol fT COB Test Conditions Min. Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) Output Capacitance (VCB = 12 Vdc, IE = 0, f = 1.0 MHz) 500 Value Typ. 4.0 Max. Unit MHz pF MSC1301.PDF 10-25-99 2N4427 FUNCTIONAL Symbol GPE Power Gain Test Conditions Min. Test Circuit-Figure 1 Pin = 0.1 W, VCE = 12Vdc f = 175 MHz Test Circuit-Figure 1 Pin = 0.1 W, VCE = 12Vdc f = 175 MHz Test Circuit-Figure 1 Pin = 0.1 W, VCE = 12Vdc f = 175 MHz 10 Value Typ. Max. Unit dB Pout Output Power 1.0 - - Watts Collector Efficiency ηC 45 - - % 3.00 2.50 Motorola "typical" device performance Pout (Watts) 2.00 1.50 Microsemi "typical" device performance 1.00 0.50 0.00 10.0 35.0 60.0 85.0 110.0 135.0 160.0 185.0 210.0 Pin (mWatts) MSC1301.PDF 10-25-99 2N4427 C5 C6 Vcc = 12V L3 C3 L4 POUT (RL=50 OHMS) C4 C2 C1 PIN (RS=50 OHMS) L1 L2 Figure 1 - 175 MHz RF AMPLIFIER CIRCUIT FOR GPE, POUT, AND EFFICIENCY SPECIFICATIONS. L1: 2 TURNS No. 16 wire, 3/16” ID, 1/4” long L3: 2 TURNS No. 16 wire, 1/4” ID, 1/4” long Capacitor values in pF unless L2: Ferrite choke, Z=450 ohms L4: 4 TURNS No. 16 wire, 3/8” ID, 3/8” long Tuning capacitors are air variable otherwise indicated. . MSC1301.PDF 10-25-99 2N4427 RF Low Power PA, LNA, and General Purpose Discrete Selector Guide GPE Freq (MHz) Efficiency (%) Gu Max (dB) 12 11.4 15 17 13 5.5 11 14 11 16.5 14.5 15.5 14 15 17.8 15 18 20 15 15 11 14 10 8 10 11 12.5 17.8 14.5 17 IC max (mA) Pout (watts) SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 MA C R O X MA C R O X TO-39 SO-8 PO W E R M A C R O PO W E R M A C R O MA C R O X MA C R O X SO-8 PO W E R M A C R O PO W E R M A C R O MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 175 NPN 200 NPN 5 1 2 NPN 5 1 2 NPN 4 0 0 NPN 4 7 0 NPN 4 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 NPN 8 7 0 0.15 1 1.5 1.5 1.75 3 18 10 11.5 11.5 11.5 7.8 20 60 50 60 50 50 50 12 12 12.5 12.5 12.5 12.5 6 20 20 16 16 16 18 12 16 16 30 30 16 16 16 16 16 16 16 400 400 500 500 330 1000 50 150 150 400 400 400 400 150 150 200 400 400 TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MA C R O T 2N5109 MRF5943C MRF5943, R1, R2 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 MRF5812, R1, R2 MRF581A BFR90 B F Y 90 MRF914 MRF581 MRF586 MRF951 MRF571 BFR91 BFR90 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 200 200 200 200 300 300 450 450 500 500 500 500 500 500 500 500 500 3 3.4 3.4 4.5 5.5 7.5 1.5 5 1.9 2 2 2 2.4 2.5 2.5 2.5 3 1.3 1.5 2.5 3 10 30 30 1.5 50 50 5 2 2 10 50 50 2 2 5 50 90 5 10 2 2 15 15 15 6 6 15 6 5 5 10 10 10 10 5 10 10 15 6 6 5 10 1200 1000 1300 900 1600 4600 4000 1400 5000 500 5000 5000 5000 1300 4500 5000 4500 8000 8000 5000 5000 3.5 1 1 3 1 1 1 2.6 0.5 0.5 1 1 1.5 1.5 0.5 0.5 0.75 1.5 1.5 10 13 10 10 11 11 6.5 9.5 8 8 8 65 60 45 45 50 50 70 65 55 55 55 7.5 12.5 28 28 12.5 12.5 7.5 12.5 12.5 12.5 12.5 MA C R O T SO-8 MA C R O X Macro TO-72 TO-72 MA C R O X TO-39 MA C R O X MA C R O X MA C R O T MA C R O T M R F 3 8 6 6 , R 1 , R 2 NPN 4 0 0 2.2 0.45 1 1 1 NPN 1000 NPN 1000 NPN 1000 NPN 1000 TO-39 TO-39 MRF545 MRF544 PNP NPN 14 13.5 1400 1500 RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 1 2 3 3 4 1 2 3 8 1 5 4 Macro T MSC1301.PDF 10-25-99 Macro X Power SO-8 Ccb(pF) BVCEO IC max (mA) 20 30 30 12 15 25 15 15 12 15 15 15 1 15 15 12 16 17 10 10 12 15 400 400 400 50 40 150 30 50 35 100 200 200 30 50 40 200 200 100 70 35 30 Freq (MHz) NF (dB) NF IC (mA) NF VCE Packag Device Ftau (MHz) GPE (dB) GPE VCC Package Device BVCEO Type GN (dB) Type 2 70 70 400 400 2N4427 MSC1301.PDF 10-25-99