2N5002_1

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 DEVICES LEVELS 2N5002 2N5004 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C @ TC = +25°C (2) (1) Symbol VCEO VCBO VEBO IC IC (3) PT TJ, Tstg RθJC RθJA Value 80 100 5.5 5.0 10 2.0 58 -65 to +200 3.0 88 Unit V V V A W °C °C/W °C/W Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to Case Thermal Resistance, Junction-to Ambient Note: 1) Derate linearly 11.4 mW/°C for TA > +25°C 2) Derate linearly 331 mW/°C for TC > +25°C 3) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1% TO-59 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100mAdc Collector-Emitter Cutoff Current VCE = 40Vdc, IB = 0 Collector-Emitter Cutoff Current VCE = 60Vdc, VBE = 0Vdc VCE = 100Vdc, VBE = 0Vdc Emitter-Base Cutoff Current VBE = 4.0Vdc, IC = 0 VBE = 5.5Vdc, IC = 0 V(BR)CEO ICEO 80 50 Vdc µAdc Symbol Min. Max. Unit ICES 1.0 1.0 1.0 1.0 µAdc mAdc mAdc IEBO T4-LDS-0038 Rev. 2 (081508) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Forward-Current Transfer Ratio IC = 50mAdc, VCE = 5.0Vdc IC = 2.5Adc, VCE = 5.0Vdc IC = 5.0Adc, VCE = 5.0Vdc IC = 50mAdc, VCE = 5.0Vdc IC = 2.5Adc, VCE = 5.0Vdc IC = 5.0Adc, VCE = 5.0Vdc Base-Emitter Voltage Non-Saturated VCE = 5.0Vdc, IC = 2.5Adc Collector-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc IC = 5.0Adc, IB = 500mAdc Base-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc IC = 5.0Adc, IB = 500mAdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short-Circuit. Forward Current Transfer Ratio IC = 500mA, VCE = 5.0Vdc, f = 10MHz 2N5002 2N5004 Output Capacitance VCB = 10Vdc Symbol Min. Max. Unit 2N5002 hFE 2N5004 Symbol Min. 20 30 20 50 70 40 Max. --90 ----200 --1.45 Unit VBE Vdc VCE(sat) 0.75 1.5 1.45 2.2 Vdc VBE(sat) Vdc |hfe| 6.0 7.0 250 pF Cobo SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time Storage Time Fall Time Turn-Off Time IC = 5Adc; IB1 = 500mAdc IB2 = -500mAdc VBE(OFF) = 3.7Vdc RL = 6Ω Symbol ton ts tf toff Min. Max. 0.5 1.4 0.5 1.5 Unit μs μs μs μs SAFE OPERATING AREA DC Tests TC = +25°C, VCE = 0, tp = 1s, 1 Cycle Test 1 VCE = 12Vdc, IC = 5.0Adc Test 2 VCE = 32Vdc, IC = 1.7Adc Test 3 VCE = 80Vdc, IC = 100mAdc T4-LDS-0038 Rev. 2 (081508) Page 2 of 2