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2N5004

2N5004

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    2N5004 - NPN POWER SILICON TRANSISTOR - Microsemi Corporation

  • 数据手册
  • 价格&库存
2N5004 数据手册
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IC(3) PT TJ, Tstg Symbol RθJC 0 Value 80 100 5.5 5.0 10 2.0 58 -65 to +200 Max. 3.0 88 Units Vdc Vdc Vdc Adc W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1) Derate linearly 11.4 mW/ C for TA > 25 C 2) Derate linearly 331 mW/0C for TC > 250C 3) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1% 0 Unit 0 C/W 0 TO-59* RθJA C/W *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICEO ICES Min. 80 50 1.0 1.0 1.0 1.0 Max. Unit Vdc µAdc µAdc mAdc mAdc mAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc, Collector-Emitter Cutoff Current VCE = 40 Vdc, IB = 0 Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 Emitter-Base Cutoff Current VBE = 4.0 Vdc, IC = 0 VBE = 5.5 Vdc, IC = 0 IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5002, 2N5004 JAN SERIES ELECTRICAL CHARACTERISTICS (Con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 5.0 Vdc IC = 2.5 Adc, VCE = 5.0 Vdc IC = 5.0 Adc, VCE = 5.0 Vdc IC = 50 mAdc, VCE = 5.0 Vdc IC = 2.5 Adc, VCE = 5.0 Vdc IC = 5.0 Adc, VCE = 5.0 Vdc Base-Emitter Voltage Non-saturated VCE = 5.0 Adc, IC =2.5 Adc Collector-Emitter Saturation Voltage IC = 2.5 Adc, IB = 250 mAdc IC = 5.0 Adc, IB = 500 mAdc Base-Emitter Saturation Voltage IC = 2.5 Adc, IB = 250 mAdc IC = 5.0 Adc, IB = 500 mAdc 2N5002 hFE 2N5004 20 30 20 50 70 40 VBE VCE(sat) 90 200 1.45 0.25 1.5 1.45 2.2 Vdc Vdc VBE(sat) Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 500 mAdc, VCE = 5.0 Vdc, f = 10 MHz 2N5002 2N5004 Output Capacitance VCB = 10 Vdc hfe 6.0 7.0 250 pF Cobo SWITCHING CHARACTERISTICS Turn-On Time IC = 5 Adc; IB1= 500 mAdc Storage Time IB2= -500 mAdc Fall Time V BE(OFF) = 3.7 Vdc Turn-Off Time RL = 6 Ω t on t s t f 0.5 1.4 0.5 1.5 µs µs µs µs t off SAFE OPERATING AREA DC Tests TC = +250C, VCE = 0, tP = 1 second 1 Cycle Test 1 VCE = 12 Vdc, IC = 5 Adc Test 2 VCE = 32 Vdc, IC = 1.7 Adc Test 3 VCE = 80 Vdc, IC = 100 mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2
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