0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2N5005

2N5005

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    2N5005 - PNP POWER SILICON TRANSISTOR - Microsemi Corporation

  • 数据手册
  • 价格&库存
2N5005 数据手册
TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/535 Devices 2N5003 2N5005 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range Total Power Dissipation Symbol VCEO VCBO VEBO IC IC(3) PT TJ, Tstg Symbol RθJC 0 Value 80 100 5.5 5.0 10 2.0 58 -65 to +200 Max. 3.0 88 Unit Vdc Vdc Vdc Adc W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1) Derate linearly 11.4 mW/ C for TA > +25 C 2) Derate linearly 331 mW/0C for TC > +250C 3) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1% 0 0 0 TO-59 Unit C/W C/W RθJA *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICEO ICES Min. 80 50 1.0 1.0 1.0 1.0 Max. Unit Vdc µAdc µAdc mAdc MAdc MAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc, Collector-Emitter Cutoff Current VCE = 40 Vdc, IB = 0 Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 Emitter-Base Cutoff Current VBE = 4.0 Vdc, IC = 0 VBE = 5.5 Vdc, IC = 0 IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5003, 2N5005 JAN SERIES ELECTRICAL CHARACTERISTICS (Con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 5.0 Vdc IC = 2.5 Adc, VCE = 5.0 Vdc IC = 5.0 Adc, VCE = 5.0 Vdc IC = 50 mAdc, VCE = 5.0 Vdc IC = 2.5 Adc, VCE = 5.0 Vdc IC = 5.0 Adc, VCE = 5.0 Vdc Base-Emitter Voltage Non-saturated VCE = 5.0 Adc, IC =2.5 Adc Collector-Emitter Saturation Voltage IC = 2.5 Adc, IB = 250 mAdc IC = 5.0 Adc, IB = 500 mAdc Base-Emitter Saturation Voltage IC = 2.5 Adc, IB = 250 mAdc IC = 5.0 Adc, IB = 500 mAdc 2N5003 20 30 20 hFE 2N5005 50 70 40 200 90 VBE VCE(sat) 1.45 0.75 1.5 1.45 2.2 Vdc Vdc VBE(sat) Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio 2N5003 IC = 100 mAdc, VCE = 5.0 Vdc, f = 10 MHz 2N5005 Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio 2N5003 IC = 500 mAdc, VCE = 5.0 Vdc, f = 10 MHz 2N5005 Output Capacitance VCB = 10 Vdc, IE = 0, f = 1 MHz hfe 2.0 50 hfe 6.0 7.0 PF Cobo 250 SWITCHING CHARACTERISTICS Turn-On Time IC = 5 Adc; IB1= 500 mAdc Storage Time IB2= -500 mAdc Fall Time V BE(OFF) = 3.7 Vdc Turn-Off Time RL = 6 Ω t on t s t f 0.5 1.4 0.5 1.5 µs µs µs µs t off SAFE OPERATING AREA DC Tests TC = +250C, VCE = 0, tP = 1 second 1 Cycle Test 1 VCE = 12 Vdc, IC = 5 Adc Test 2 VCE = 32 Vdc, IC = 1.7 Adc Test 3 VCE = 80 Vdc, IC = 100 mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2
2N5005 价格&库存

很抱歉,暂时无法提供与“2N5005”相匹配的价格&库存,您可以联系我们找货

免费人工找货