2N5011

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010S 2N5011S 2N5012S 2N5013S 2N5014S 2N5015S JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage 2N5010 2N5011 2N5012 VCER 2N5013 2N5014 2N5015 Collector-Base Voltage 2N5010 2N5011 2N5012 VCBO 2N5013 2N5014 2N5015 Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +25°C @ TC = +25° C Thermal Resistance, Junction to Case 1/ Pt 1.0 7.0 20 -65 to +200 W VEBO IC IB 800 900 1000 5 200 20 Vdc Vdc Vdc Vdc mAdc mAdc 800 900 1000 500 600 700 Vdc Vdc Vdc Vdc Vdc Vdc Symbol Value 500 600 700 Unit Vdc Vdc Vdc TO-5 2N5010 thru 2N5015 TO-39 2N5010S thru 2N5015S RθJC Tj, Tstg °C/W °C Operating & Storage Junction Temperature Range Note: 1/ See 19500/727 for Thermal Derating Curves. T4-LDS-0067 Rev. 1 (082021) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Collector to Base Cutoff Current VCB = 400V VCB = 500V VCB = 580V VCB = 650V VCB = 700V VCB = 760V 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 @ TA = +150°C 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 Symbol Min. Max. 10 10 10 10 10 10 Unit nAdc nAdc nAdc nAdc nAdc nAdc ICBO1 VCB = 400V VCB = 500V VCB = 588V VCB = 650V VCB = 700V VCB = 760V Emitter to Base Cutoff Current VEB = 4V Collector to Base Breakdown Voltage IC = 0.1mAdc IC = 0.1mAdc IC = 0.1mAdc IC = 0.2mAdc IC = 0.2mAdc IC = 0.2mAdc Emitter to Base Breakdown Voltage IC = 0mA IE = 0.05mA Collector to Emitter Breakdown Voltage RBE = 1KΩ IC = 0.2mA, Pulsed ICBO2 10 10 10 10 10 10 uAdc uAdc uAdc uAdc uAdc uAdc IEBO 20 uAdc 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 V(BR)CBO 500 600 700 800 900 1000 Vdc Vdc Vdc Vdc Vdc Vdc V(BR)EBO 5 Vdc 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 V(BR)CER 500 600 700 800 900 1000 Vdc Vdc Vdc Vdc Vdc Vdc Forward-Current Transfer Ratio IC = 25mA IC = 20mA VCE = 10V VCE = 10V IC = 5mA VCE = 10V IC = 20mA 2N5010, 2N5011, 2N5012 2N5013, 2N5014, 2N5015 hFE1 30 30 180 180 hFE2 @ TA = -55°C hFE3 10 10 T4-LDS-0067 Rev. 1 (082021) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Cont.) Parameters / Test Conditions Base-Emitter Saturation Voltage IC = 25mA IC = 20mA IB = 5mA, Pulsed Collector-Emitter Saturation Voltage IC = 25mA IC = 25mA IC = 25mA IC = 20mA IC = 20mA IC = 20mA IB = 5mA, Pulsed 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 1.4 1.5 1.6 1.6 1.6 1.8 Vdc Vdc Vdc Vdc Vdc Vdc 2N5010, 2N5011, 2N5012 2N5013, 2N5014, 2N5015 Symbol Min. Max. 1.0 1.0 Unit Vdc Vdc VBE(SAT) VCE(SAT) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of small signal short-circuit forward current transfer ratio Symbol 2N5010, 2N5011, 2N5012 2N5013, 2N5014, 2N5015 Min. 1.0 1.0 Max. Unit VCE = 10Vdc, IC = 25mA, f = 10MHz VCE = 10Vdc, IC = 20mA, f = 10MHz Open circuit output capacitance VCB = 10V, IE = 0, f = 2MHz |hfe| Cobo 30 pF T4-LDS-0067 Rev. 1 (082021) Page 3 of 3