2N5013S

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010S 2N5011S 2N5012S 2N5013S 2N5014S 2N5015S JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 Collector-Base Voltage 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +25°C @ TC = +25° C Thermal Resistance, Junction to Case 1/ Pt RθJC Tj, Tstg 1.0 7.0 20 -65 to +200 W °C/W °C TO-39 2N5010S thru 2N5015S VEBO IC IB VCBO VCER Symbol Value 500 600 700 800 900 1000 500 600 700 800 900 1000 5 200 20 Unit Vdc Vdc Vdc Vdc Vdc Vdc Vdc Vdc Vdc Vdc Vdc Vdc Vdc mAdc mAdc TO-5 2N5010 thru 2N5015 Operating & Storage Junction Temperature Range Note: 1/ See 19500/727 for Thermal Derating Curves. T4-LDS-0067 Rev. 2 (100293) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Collector to Base Cutoff Current VCB = 400V VCB = 500V VCB = 580V VCB = 650V VCB = 700V VCB = 760V VCB = 400V VCB = 500V VCB = 588V VCB = 650V VCB = 700V VCB = 760V Emitter to Base Cutoff Current VEB = 4V Collector to Base Breakdown Voltage IC = 0.1mAdc IC = 0.1mAdc IC = 0.1mAdc IC = 0.2mAdc IC = 0.2mAdc IC = 0.2mAdc Emitter to Base Breakdown Voltage IC = 0mA IE = 0.05mA Collector to Emitter Breakdown Voltage RBE = 1KΩ IC = 0.2mA, Pulsed 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 @ TA = +150°C 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 Symbol Min. Max. 10 10 10 10 10 10 10 10 10 10 10 10 20 Unit nAdc nAdc nAdc nAdc nAdc nAdc uAdc uAdc uAdc uAdc uAdc uAdc uAdc ICBO1 ICBO2 IEBO 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 V(BR)CBO 500 600 700 800 900 1000 5 Vdc Vdc Vdc Vdc Vdc Vdc Vdc V(BR)EBO 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010, 2N5011, 2N5012 2N5013, 2N5014, 2N5015 V(BR)CER 500 600 700 800 900 1000 30 30 10 10 180 180 Vdc Vdc Vdc Vdc Vdc Vdc Forward-Current Transfer Ratio IC = 25mA IC = 20mA VCE = 10V VCE = 10V IC = 5mA VCE = 10V IC = 20mA hFE1 hFE2 @ TA = -55°C hFE3 T4-LDS-0067 Rev. 2 (100293) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Cont.) Parameters / Test Conditions Base-Emitter Saturation Voltage IC = 25mA IC = 20mA IB = 5mA, Pulsed Collector-Emitter Saturation Voltage IC = 25mA IC = 25mA IC = 25mA IC = 20mA IC = 20mA IC = 20mA IB = 5mA, Pulsed DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of small signal short-circuit forward current transfer ratio VCE = 10Vdc, IC = 25mA, f = 10MHz VCE = 10Vdc, IC = 20mA, f = 10MHz 2N5010, 2N5011, 2N5012 2N5013, 2N5014, 2N5015 |hfe| 1.0 1.0 Symbol Min. Max. Unit 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 1.4 1.5 1.6 1.6 1.6 1.8 Vdc Vdc Vdc Vdc Vdc Vdc 2N5010, 2N5011, 2N5012 2N5013, 2N5014, 2N5015 Symbol Min. Max. 1.0 1.0 Unit Vdc Vdc VBE(SAT) VCE(SAT) Open circuit output capacitance VCB = 10V, IE = 0, f = 2MHz Cobo pF 30 T4-LDS-0067 Rev. 2 (100293) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.10 6.60 .335 .370 8.51 9.40 .200 TP 5.08 TP .016 .019 0.41 0.48 See note 14 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .030 0.76 .029 .045 0.74 1.14 .028 .034 0.71 0.86 .010 0.25 45° TP 45° TP 1, 2, 10, 12, 13, 14 Notes 6 7 8,9 8,9 8,9 8,9 7 5 3,4 3 10 7 NOTE: 1. 2. 3. 4. 5. 6. 7. Dimensions are in inches. Millimeters are given for general information only. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by gauging procedure. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in and beyond LL minimum. All three leads. The collector shall be internally connected to the case. Dimension r (radius) applies to both inside corners of tab. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. Lead 1 = emitter, lead 2 = base, lead 3 = collector. For non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For Ssuffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max. 8. 9. 10. 11. 12. 13. 14. T4-LDS-0067 Rev. 2 (100293) Page 4 of 4