2N5115

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 2N5115 2N5116 ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Gate-Source Voltage (1) (1) MQ = JAN Equivalent MX = JANTX Equivalent MV = JANTXV Equivalent Symbol VGS VDS VDG IG All Devices 30 30 30 50 0.500 -65 to +200 Unit Vdc Vdc Vdc mAdc W °C Drain-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation TA = +25°C (2) PT Tstg Storage Temperature Range (1) Symmetrical geometry allows operation of those units with source / drain leads interchanged. (2) Derate linearly 3.0 mW/°C for TA > 25°C. ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Gate-Source Breakdown Voltage VDS = 0, IG = 1.0 μA dc Drain-Source “On” State Voltage VGS = 0V dc, ID = -15mA dc VGS = 0V dc, ID = -7.0mA dc VGS = 0V dc, ID = -3.0mA dc Gate Reverse Current VDS = 0, VGS = 20V dc Drain Current Cutoff VGS = 12V dc, VDS = -15V dc VGS = 7.0V dc, VDS = -15V dc VGS = 5.0V dc, VDS = -15V dc Zero Gate Voltage Drain Current VGS = 0, VDS = -18V dc VGS = 0, VDS = -15V dc VGS = 0, VDS = -15V dc Gate-Source Cutoff VDS = -15, ID = -1.0nA dc VDS = -15, ID = -1.0nA dc VDS = -15, ID = -1.0nA dc Symbol V(BR)GSS Min. 30 Max. Unit Vdc TO-18 (TO-206AA) 2N5114 2N5115 2N5116 VDS(on) -1.3 -0.8 -0.6 Vdc IGSS 500 pAdc 2N5114 2N5115 2N5116 ID(off) -500 -500 -500 pAdc 2N5114 2N5115 2N5116 IDSS -30 -15 -5.0 -90 -60 -25 mAdc 2N5114 2N5115 2N5116 VGS(off) 5.0 3.0 1.0 10 6.0 4.0 Vdc T4-LDS-0006 Rev. 1 (063387) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Drain-Source “On” State Resistance VGS = 0, ID = -1.0mA dc 2N5114 2N5115 2N5116 Small-Signal Drain-Source “On” State Resistance VGS = 0, ID = 0; f = 1kHz 2N5114 2N5115 2N5116 Small-Signal, Common-Source Short-Circuit Reverse Transfer Capacitance 2N5114 VGS = 12V dc, VDS = 0 2N5115 VGS = 7.0V dc, VDS = 0 2N5116 VGS = 5.0V dc, VDS = 0 Small-Signal, Common-Source Short-Circuit Input Capacitance VGS = 0, VDS = -15V dc, f = 1.0MHz 2N5114, 2N5115 2N5116 SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Delay Time Symbol 2N5114 2N5115 2N5116 2N5114 2N5115 2N5116 2N5114 2N5115 2N5116 See Figure 2 of MIL-PRF-19500/476 tdon Min. Max. 6 10 25 10 20 35 6 8 20 Unit ηs Symbol Min. Max. 75 100 175 Unit rds(on)1 Ω rds(on)2 75 100 175 Ω Crss 7.0 pF Ciss 25 27 pF Rise Time tr ηs Turn-Off Delay Time tdoff ηs T4-LDS-0006 Rev. 1 (063387) Page 2 of 2