2N5152_1

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DEVICES LEVELS 2N5152 2N5152L 2N5152U3 2N5154 2N5154L 2N5154U3 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation (1) Symbol VCEO VCBO VEBO IC Value 80 100 5.5 2.0 1.0 10 -65 to +200 10 1.7 (U3) Unit Vdc Vdc Vdc Adc W °C °C/W TO-5 2N5152L, 2N5154L @ TA = +25°C @ TC = +25°C PT TJ , Tstg RθJC Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to Case (1) Note: 1) 2) See 19500/544 for thermal derating curves. This value applies for PW ≤ 8.3ms, duty cycle ≤ 1%. ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 100mAdc, IB = 0 Emitter-Base Cutoff Current VEB = 4.0Vdc, IC = 0 VEB = 5.5Vdc, IC = 0 Collector-Emitter Cutoff Current VCE = 60Vdc, VBE = 0 VCE = 100Vdc, VBE = 0 Collector-Emitter Cutoff Current VCE = 40Vdc, IB = 0 ON CHARACTERTICS Forward-Current Transfer Ratio IC = 50mAdc, VCE = 5Vdc IC = 2.5Adc, VCE = 5Vdc V(BR)CEO 80 Vdc TO-39 (TO-205AD) 2N5152, 2N5154 Symbol Min. Max. Unit IEBO 1.0 1.0 1.0 1.0 50 µAdc mAdc µAdc mAdc µAdc ICES ICEO 2N5152 2N5154 2N5152 2N5154 hFE 20 50 30 70 ----90 200 U-3 2N5152U3, 2N5154U3 T4-LDS-0039 Rev. 1 (080797) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 ELECTRICAL CHARACTERISTICS (con’t) Parameters / Test Conditions IC = 5Adc, VCE = 5Vdc Collector-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc IC = 5.0Adc, IB = 500mAdc Base-Emitter Voltage Non-Saturation IC = 2.5Adc, VCE = 5Vdc Base-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc IC = 5.0Adc, IB = 500mAdc 2N5152 2N5154 Symbol hFE Min. 20 40 Max. Unit VCE(sat) 0.75 1.5 1.45 Vdc VBE Vdc VBE(sat) 1.45 2.2 Vdc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 500mAdc, VCE = 5Vdc, f = 10MHz 2N5152 2N5154 Small-signal short Circuit Forward-Current Transfer Ratio IC = 100mAdc, VCE = 5Vdc, f = 1KHz 2N5152 2N5154 Output Capacitance VCB = 10Vdc, IE = 0, f = 1.0MHz Symbol Min. Max. Unit |hfe| 6 7 hfe Cobo 20 50 250 pF SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time IC = 5Adc, IB1 = 500mAdc Turn-Off Time RL = 6Ω Storage Time Fall Time IB2 = -500mAdc VBE(OFF) = 3.7Vdc Symbol ton toff ts tf Min. Max. 0.5 1.5 1.4 0.5 Unit μs μs μs μs SAFE OPERATING AREA DC Tests TC = +25°C, 1 Cycle, tP = 1.0s Test 1 VCE = 5.0Vdc, IC = 2.0Adc Test 2 VCE = 32Vdc, IC = 310mAdc Test 3 VCE = 80Vdc, IC = 12.5mAdc T4-LDS-0039 Rev. 1 (080797) Page 2 of 2