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2N5581

2N5581

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    2N5581 - NPN SILICON SWITCHING TRANSISTOR - Microsemi Corporation

  • 数据手册
  • 价格&库存
2N5581 数据手册
TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices 2N5581 2N5582 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tstg Value 50 75 6.0 800 0.5 2.0 -55 to +200 Unit Vdc Vdc Vdc mAdc W W 0 C @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA > 250C 2) Derate linearly 11.43 mW/0C for TC > 250C TO-46* (TO-206AB) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min. 50 10 10 10 10 Max. Unit Vdc ηAdc µAdc ηAdc µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 75 Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 6.0Vdc IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5581, 2N5582 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 10 Vdc IC =1.0 m Adc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc IC = 0.1 mAdc, VCE = 10 Vdc IC =1.0 m Adc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc Base-Emitter Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc 2N5581 hFE 30 35 40 40 20 50 75 100 100 30 120 2N5582 hFE 300 VCE(sat) 0.3 1.0 0.6 1.2 2.0 Vdc VBE(sat) Vdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 1.0 mAdc, VCE = 10 Vdc Forward Current Transfer Ratio IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz 2N5581 2N5582 hfe 30 50 2.5 8.0 25 pF pF hfe Cobo Cibo SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 150 mAdc; IB1= 15 mAdc Turn-Off Time VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. t on 35 300 ηs ηs t off 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2
2N5581 价格&库存

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