2N5662

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCER VEBO IB IC @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range Total Power Dissipation PT TJ, Tstg 2N5660 2N5661 5.0 87.5 2N5660 2N5661 2N5662 2N5663 200 300 250 400 250 400 6.0 0.5 2.0 2N5660 2N5662 2N5661 2N5663 2.0(1) 1.0(2) (3) 20 15(4) -65 to +200 2N5662 2N5663 6.67 145.8 Unit Vdc Vdc Vdc Vdc Adc Adc TO-66* (TO-213AA) 2N5660, 2N5661 W W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) 2) 3) Symbol RθJC Unit 0 C/W 4) RθJA Derate linearly 11.4 mW/0C for TA >+ 250C Derate linearly 5.7 mW/0C for TA > +250C Derate linearly 200 mW/0C for TC > +1000C Derate linearly 150 mW/0C for TC > +1000C TO-5* 2N5662, 2N5663 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Breakdown Voltage IC = 10 mAdc, RBE = 100Ω Emitter-Base Breakdown Voltage IE = 10 µAdc 2N5660, 2N5662 2N5661, 2N5663 2N5660, 2N5662 2N5661, 2N5663 V(BR)CEO 200 300 250 400 6.0 Vdc V(BR)CER V(BR)EBO Vdc Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5660, 2N5661, 2N5662, 2N5663 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Collector-Emitter Cutoff Current VCE = 200 Vdc VCE = 300 Vdc Collector-Base Cutoff Current VCB = 200 Vdc VCB = 250 Vdc VCB = 300 Vdc VCB = 400 Vdc Symbol 2N5660, 2N5662 2N5661, 2N5663 2N5660, 2N5662 2N5660, 2N5662 2N5661, 2N5663 2N5661, 2N5663 ICES Min. Max. 0.2 0.2 0.1 1.0 0.1 1.0 Unit µAdc µAdc µAdc mAdc µAdc mAdc ICBO ON CHARACTERISTICS (5) Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 2.0 Vdc IC = 0.5 Adc, VCE = 5.0 Vdc IC = 1.0 Adc, VCE = 5.0 Vdc IC = 2.0 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc IC = 2.0 Adc, IB = 0.4 Adc Base-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc IC = 2.0 Adc, IB = 0.4 Adc 2N5660, 2N5662 2N5661, 2N5663 2N5660, 2N5662 2N5661, 2N5663 All Types All Types 40 25 40 25 15 5.0 hFE 120 75 VCE(sat) 0.4 0.8 1.2 1.5 Vdc VBE(sat) Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.1 Adc, VCE = 5.0 Vdc, f = 10 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe Cobo 2.0 7.0 45 pF SWITCHING CHARACTERISTICS Turn-On Time VCC = 100 Vdc; IC = 0.5 Adc; IB1 = 15 Adc 2N5660, 2N5662 VCC = 100 Vdc; IC = 0.5 Adc; IB1 = 25 Adc 2N5661, 2N5663 Turn-Off Time VCC = 100 Vdc; IC = 0.5 Adc; IB1 = -IB2 = 15 Adc 2N5660, 2N5662 VCC = 100 Vdc; IC = 0.5 Adc; IB1 = -IB2 = 25 Adc 2N5661, 2N5663 t on 0.25 0.25 0.85 1.2 µs t off µs SAFE OPERATING AREA DC Tests TC = +1000C, 1 Cycle, t ≥ 1.0 s Test 1 VCE = 10 Vdc, IC = 2.0 Adc 2N5660, 2N5661 VCE = 7.5 Vdc, IC = 2.0 Adc 2N5662, 2N5663 Test 2 VCE = 40 Vdc, IC = 500 mAdc 2N5660, 2N5661 VCE = 25 Vdc, IC = 600 mAdc 2N5662, 2N5663 Test 3 VCE = 200 Vdc, IC = 36 mAdc 2N5660 VCE = 200 Vdc, IC = 27 mAdc 2N5662 Test 4 VCE = 300 Vdc, IC = 19 mAdc 2N5661 VCE = 300 Vdc, IC = 14 mAdc 2N5663 (5) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2