2N5664_1

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5665 2N5666 2N5666S 2N5666U3 2N5667 2N5667S JAN JANTX JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VEBO IB IC 2N5664 2N5665 Total 1/ Power Dissipation @ TA = +25°C @ TC = +100°C PT TJ, Tstg 2.5 30 2N5664 2N5666, S 200 250 6.0 1.0 5.0 2N5666, S 2N5667, S 1.2 15 -65 to +200 2N5666U3 1.5 35 W °C 2N5665 2N5667, S 300 400 Unit Vdc Vdc Vdc Adc Adc TO-66 (TO-213AA) 2N5664, 2N5665 Operating & Storage Junction Temperature Range TO-5 2N5666, 2N5667 Note: 1) Consult 19500/455 for thermal derating curves. ELECTRICAL CHARACTERISTICS (TC = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc 2N5664, 2N5666 2N5665, 2N5667 Emitter-Base Breakdown Voltage IE = 10μAdc Collector-Emitter Cutoff Current VCE = 200Vdc 2N5664, 2N5666 VCE = 300Vdc 2N5665, 2N5667 Collector-Base Cutoff Current VCB = 200Vdc VCB = 250Vdc VCB = 300Vdc VCB = 400Vdc 2N5664, 2N5666 2N5665, 2N5667 ICBO V(BR)CER 250 400 6.0 0.2 0.2 0.1 1.0 0.1 1.0 Vdc Symbol Min. Max. Unit TO-39 (TO-205AD) 2N5666S, 2N5667S V(BR)EBO Vdc ICES μAdc μAdc mAdc μAdc mAdc U-3 2N5666U3 T4-LDS-0062 Rev. 1 (081095) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 ELECTRICAL CHARACTERISTICS (con’t) Parameters / Test Conditions ON CHARACTERTICS Forward-Current Transfer Ratio IC = 0.5Adc, VCE = 2.0Vdc 2N5664, 2N5666 2N5665, 2N5667 2N5664, 2N5666 2N5665, 2N5667 2N5664, 2N5666 2N5665, 2N5667 All Types 40 25 40 25 15 10 5.0 120 75 Symbol Min. Max. Unit IC = 1.0Adc, VCE = 5.0Vdc hFE IC = 3.0Adc, VCE = 5.0Vdc IC = 5.0Adc, VCE = 5.0Vdc Collector-Emitter Saturation Voltage IC = 3.0Adc, IB = 0.3Adc IC = 3.0Adc, IB = 0.6Adc IC = 5.0Adc, IB = 1.0Adc Base-Emitter Saturation Voltage IC = 3.0Adc, IB = 0.3Adc IC = 3.0Adc, IB = 0.6Adc IC = 5.0Adc, IB = 1.0Adc 2N5664, 2N5666 2N5665, 2N5667 All Types VCE(sat) 0.4 0.4 1.0 Vdc 2N5664, 2N5666 2N5665, 2N5667 All Types VBE(sat) 1.2 1.2 1.5 Vdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 0.5Adc, VCE = 5.0Vdc, f = 10MHz Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 120 pF |hfe| 2.0 7.0 SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time VCC = 100Vdc; IC = 1.0Adc; IB1 = 30mAdc Turn-Off Time VCC = 100Vdc; IC = 1.0Adc; IB1 = -IB2 = 50mAdc 2N5664, 2N5666 2N5665, 2N5667 toff 1.5 2.0 μs Symbol ton Min. Max. 0.25 Unit μs T4-LDS-0062 Rev. 1 (081095) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 SAFE OPERATING AREA DC Tests TC = 100°C, 1 Cycle, t ≥ 1.0s, tr + tf = 10μs Test 1 VCE = 6.0Vdc, IC = 5.0Adc VCE = 3.0Vdc, IC = 5.0Adc Test 2 VCE = 32Vdc, IC = 0.75Adc VCE = 40Vdc, IC = 0.75Adc VCE = 29Vdc, IC = 0.4Adc VCE = 37.5Vdc, IC = 0.4Adc Test 3 VCE = 200Vdc, IC = 29mAdc VCE = 200Vdc, IC = 19mAdc VCE = 300Vdc, IC = 21mAdc VCE = 300Vdc, IC = 14mAdc 2N5664 2N5666 2N5665 2N5667 2N5664 2N5665 2N5666 2N5667 2N5664 , 2N5665 2N5666, 2N5667 (2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% T4-LDS-0062 Rev. 1 (081095) Page 3 of 3