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2N6274

2N6274

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    2N6274 - NPN POWER SILICON TRANSISTOR - Microsemi Corporation

  • 数据手册
  • 价格&库存
2N6274 数据手册
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 DEVICES LEVELS 2N6274 2N6277 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Condition Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current @ TC = +25°C (1) Total Power Dissipation @ TC = +100°C (2) Operating & Storage Temperature Range THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal resistance, Junction-to-Case Symbol RθJC Max 0.7 Unit °C/W Symbol VCEO VCBO VEBO IB IC PT Tj , Tstg 2N6274 100 120 6.0 20 50 2N6277 150 180 6.0 20 Unit Vdc Vdc Vdc Adc Adc W °C TO-3 (TO-204AE) 50 250 143 -65 to +200 Note: 1) Derate linearly 1.43 W/°C between TC = +25°C and TC = 200°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS (1) Collector-Emitter Breakdown Voltage IC = 50mAdc Collector-Emitter Cutoff Current VCE = 50Vdc VCE = 75Vdc Collector-Emitter Cutoff Current VCE = 120Vdc, VBE = -1.5Vdc VCE = 180Vdc, VBE = -1.5Vdc Collector-Base Cutoff Current VCB = 120Vdc VCB = 180Vdc Emitter-Base Cutoff Current VEB = 6.0Vdc 2N6274 2N6277 2N6274 2N6277 2N6274 2N6277 2N6274 2N6277 V(BR)CEO ICEO ICEX ICBO IEBO 100 150 50 50 10 10 10 10 100 Vdc µAdc µAdc µAdc µAdc Symbol Min. Max. Unit T4-LDS-0163 Rev. 1 (100546) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 1.0Adc, VCE = 4.0Vdc IC = 20Adc, VCE = 4.0Vdc IC = 50Adc, VCE = 4.0Vdc Collector-Emitter Saturation Voltage IC = 20Adc, IB = 2.0Adc IC = 50Adc, IB = 10Adc Base-Emitter Saturation Voltage IC = 20Adc, IB = 2.0Adc DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short-Circuit, Forward Current Transfer Ratio IC = 1.0Adc, VCE = 10Vdc, f = 10MHz Output Capacitance VCB = 10Vdc, IE = 0, f = 1.0MHz SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time VCC = 80Vdc; IC = 20Adc; IB = 2.0Adc Turn-Off Time VCC = 80Vdc ; IC = 20Adc; IB1 = -IB2 = 2.0Adc SAFE OPERATING AREA DC Tests TC = +25°C, 1 Cycle, t = 1.0s Test 1 VCE = 5.0Vdc, IC = 50Adc Test 2 VCE = 8.6Vdc, IC = 165mAdc Test 3 VCE = 80Vdc, IC = 29mAdc Test 4 VCE = 120Vdc, IC = 110mAdc All Types All Types 2N6274 2N6277 Symbol ton toff Min. Max. 0.5 1.05 Unit μs μs Symbol |hfe| Cobo Min. Max. Unit (2) Symbol Min. Max. Unit hFE 50 30 10 120 VCE(sat) 1.0 3.0 1.8 Vdc VBE(sat) Vdc 3.0 12 600 pF (2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% T4-LDS-0163 Rev. 1 (100546) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com PACKAGE DIMENSIONS Dimensions Inches Millimeters Min Max Min Max .875 22.22 .250 .328 6.35 8.33 .495 .525 12.57 13.34 .131 .188 3.33 4.78 .060 .135 1.52 3.43 .057 .063 1.45 1.60 .312 .500 7.92 12.70 .050 1.27 .151 .161 3.84 4.09 1.177 1.197 29.90 30.40 .420 .440 10.67 11.18 .205 .225 5.21 5.72 .655 .675 16.64 17.15 Ltr CD CH HR HR1 HT LD LL L1 MHD MHS PS PS 1 S1 Notes 3 6 5, 9 4, 5, 9 5, 9 7 5 NOTE: 1. * 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. * * Dimensions are in inches. Millimeters are given for general information only. Body contour is optional within zone defined by CD. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used, measurement shall be made at seating plane. Both terminals. At both ends. Two holes. Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case. LD applies between L1 and LL. Lead diameter shall not exceed twice LD within L1. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. * FIGURE 1. Physical dimensions (TO-3) T4-LDS-0163 Rev. 1 (100546) Page 3 of 3
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