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2N6650

2N6650

  • 厂商:

    MICROSEMI(美高森美)

  • 封装:

  • 描述:

    2N6650 - PNP DARLINGTON POWER SILICON TRANSISTOR - Microsemi Corporation

  • 数据手册
  • 价格&库存
2N6650 数据手册
TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 2N6650 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol 2N6648 2N6649 2N6650 Unit VCEO VCBO VEBO IB IC -40 -40 -60 -80 -60 -80 -5.0 -0.25 -10 5.0 85 -65 to +175 Max. 1.76 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = +250C (1) PT @ TC = +250C (2) Operating & Storage Junction Temperature Range TJ, Tstg Symbol RθJC THERMAL CHARACTERISTICS Characteristics Thermal Resistance Junction-to-Case 1) Derate linearly 33.3 mW/0C for TA > +250C 2) Derate linearly 567 mW/0C for TC > +250C 0 TO-3* (TO-204AA) *See Appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc 2N6648 2N6649 2N6650 2N6648 2N6649 2N6650 2N6648 2N6649 2N6650 V(BR)CEO -40 -60 -80 -40 -60 -80 -1.0 -1.0 -1.0 Vdc Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω V(BR)CER Vdc Collector-Base Cutoff Current VCB = -40 Vdc VCB = -60 Vdc VCB = -80 Vdc ICBO mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6648, 2N6649, 2N6650 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = -40 Vdc VCE = -60 Vdc VCE = -80 Vdc Collector-Emitter Cutoff Current VCE = -40 Vdc, VBE = 1.5 Vdc VCE = -60 Vdc, VBE = 1.5 Vdc VCE = -80 Vdc, VBE = 1.5 Vdc Symbol IEBO 2N6648 2N6649 2N6650 2N6648 2N6649 2N6650 Min. Max. -10 -1.0 -1.0 -1.0 -0.3 -0.3 -0.3 Unit mAdc ICEO mAdc ICEX mAdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = -1.0 Adc, VCE = 3.0 Vdc IC = -5.0 Adc, VCE = 3.0 Vdc IC = -10 Adc, VCE = 3.0 Vdc Collector-Emitter Saturation Voltage IC =-5 .0 Adc, IB = -10 mAdc IC = -10 Adc, IB = -0.1 Adc Base-Emitter Voltage IC = -5.0 Adc, VCE = -3.0 Vdc IC = -10 Adc, VCE = -3.0 Vdc hFE 300 1,000 100 20,000 VCE(sat) -2.0 -3.0 -2.8 -4.5 Vdc VBE(on) Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC =- 1.0 Adc, VCE = -5.0 Vdc, f = 1.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe Cobo 50 400 300 pF SWITCHING CHARACTERISTICS Turn-On Time VCC = -30 Vdc; IC = -5.0 Adc; IB1 =- 20 mAdc Turn-Off Time VCC = -30 Vdc; IC = -5.0 Adc; IB1 = -IB2 = 20 mAdc t on 2.5 10 µs µs t off SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = -8.5 Vdc, IC = -10 Adc Test 2 VCE = -25 Vdc, IC = -3.4 Adc Test 3 VCE = -40 Vdc, IC = -0.9 Adc 2N6648 VCE = -60 Vdc, IC = -0.3 Adc 2N6449 VCE = -80 Vdc, IC = -0.14 Adc 2N6650 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2
2N6650 价格&库存

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