2N6760

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6760 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Drain – Source Voltage Gate – Source Voltage Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation TC = +25°C Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 3.5A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C Drain Current VGS = 0V, VDS = 320V VGS = 0V, VDS = 400V, Tj = +125°C VGS = 0V, VDS = 320V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 10V, ID = 3.5A pulsed VGS = 10V, ID = 5.5A pulsed VGS = 10V, ID = 3.5A pulsed, Tj = +125°C Diode Forward Voltage VGS = 0V, ID = 5.5A pulsed T4-LDS-0152 Rev. 2 (100858) Symbol VDS VGS ID1 ID2 Ptl Rds(on) Top, Tstg Value 400 ±20 5.5 3.5 75 (1) 1.0 (2) -55 to +150 Unit Vdc Vdc Adc Adc W Ω °C TO-204AA (TO-3) 2N6760 Symbol Min. Max. Unit V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 IDSS3 rDS(on)1 rDS(on)2 rDS(on)3 VSD 400 2.0 1.0 4.0 5.0 ±100 ±200 25 1.0 0.25 1.0 1.22 2.2 1.5 Vdc Vdc nAdc µAdc mAdc mAdc Ω Ω Ω Vdc Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time Symbol ID = 5.5A, VGS = 10Vdc, Gate drive impedance = 7.5Ω, VDD = 200Vdc di/dt ≤ 100A/µs, VDD ≤ 30V, IF = 5.5A td(on) tr td(off) tf trr Min. Max. 30 40 80 30 700 Unit Symbol VGS = 10V, ID = 5.5A VDS = 320V Qg(on) Qgs Qgd Min. Max. 39 6.0 20 Unit nC ns ns T4-LDS-0152 Rev. 2 (100858) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com PACKAGE DIMENSIONS NOTES: 1 2 3 Dimensions are in inches. Millimeters are given for general information only. These dimensions should be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below seating plane. When gauge is not used measurement will be made at the seating plane. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. Mounting holes shall be deburred on the seating plane side. Drain is electrically connected to the case. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. Ltr CD CH HR HR1 HT LD LL LL1 MHD MHS PS PS1 s1 4 5 6 7 Dimensions Inches Millimeters Min Max Min Max .875 22.23 .250 .360 6.35 9.14 .495 .525 12.57 13.34 .131 .188 3.33 4.78 .060 .135 1.52 3.43 .038 .043 0.97 1.09 .312 .500 7.92 12.70 .050 1.27 .151 .161 3.84 4.09 1.177 1.197 29.90 30.40 .420 .440 10.67 11.18 .205 .225 5.21 5.72 .655 .675 16.64 17.15 Notes 3, 5 3, 5 * FIGURE 1: Physical dimensions of transistor (TO-204AA). T4-LDS-0152 Rev. 2 (100858) Page 3 of 3